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SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C mhando 2inch 3inch 4inch 6inch 8inch

SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C mhando 2inch 3inch 4inch 6inch 8inch Featured Image
  • SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C mhando 2inch 3inch 4inch 6inch 8inch
  • SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C mhando 2inch 3inch 4inch 6inch 8inch
  • SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C mhando 2inch 3inch 4inch 6inch 8inch
  • SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C mhando 2inch 3inch 4inch 6inch 8inch
  • SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C mhando 2inch 3inch 4inch 6inch 8inch
  • SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C mhando 2inch 3inch 4inch 6inch 8inch

Tsananguro pfupi:

Tinopa sarudzo dzakasiyana-siyana dzemawafer emhando yepamusoro eSiC (Silicon Carbide), tichinyanya kutarisa mawafer emhando yeN-type 4H-N ne6H-N, ayo akakodzera kushandiswa mumagetsi epamusoro, zvishandiso zvemagetsi, uye munzvimbo dzinopisa zvakanyanya. Aya mawafer emhando yeN anozivikanwa nekugona kwawo kupisa kwakanyanya, kugadzikana kwemagetsi kwakanaka, uye kugara kwenguva refu kunoshamisa, zvichiita kuti ave akakodzera kushandiswa kwepamusoro-soro senge magetsi emagetsi, masisitimu ekufambisa mota dzemagetsi, ma inverters esimba rinodzoreredzwa, uye magetsi emumaindasitiri. Kuwedzera kune zvatinopa isu emhando yeN, tinopawo mawafer emhando yeP-type 4H/6H-P ne3C SiC ezvinodiwa, kusanganisira zvishandiso zve high-frequency neRF, pamwe nekushandisa photonic. Mawafer edu anowanikwa muhukuru hunotangira pa2 inches kusvika 8 inches, uye tinopa mhinduro dzakagadzirirwa kusangana nezvinodiwa zvemaindasitiri akasiyana siyana. Kuti uwane rumwe ruzivo kana mibvunzo, ndapota inzwa wakasununguka kutibata.


Zvinhu zvirimo

Zvivakwa

4H-N uye 6H-N (N-type SiC Wafers)

Kushandiswa:Inonyanya kushandiswa mumagetsi emagetsi, maoptoelectronics, uye mashandisirwo ekupisa kwakanyanya.

Dhayamita Range:50.8 mm kusvika 200 mm.

Ukobvu:350 μm ± 25 μm, ine ukobvu hwe500 μm ± 25 μm husingasarudzike.

Kuramba:N-rudzi rwe4H/6H-P: ≤ 0.1 Ω·cm (Z-giredhi), ≤ 0.3 Ω·cm (P-giredhi); N-rudzi rwe3C-N: ≤ 0.8 mΩ·cm (Z-giredhi), ≤ 1 mΩ·cm (P-giredhi).

Kuomarara:Ra ≤ 0.2 nm (CMP kana MP).

Kuwanda kweMapombi Madiki (MPD):< 1 pa/cm².

TVV: ≤ 10 μm yedhayamita dzese.

Kukombama: ≤ 30 μm (≤ 45 μm yemawafer ane 8-inch).

Kusabatanidzwa kweEdge:3 mm kusvika 6 mm zvichienderana nerudzi rwewafer.

Kurongedza:Kaseti ine wafer yakawanda kana mudziyo mumwe chete wewafer.

Saizi iripo 3inch 4inch 6inch 8inch

HPSI (High Purity Semi-Insulating SiC Wafers)

Kushandiswa:Inoshandiswa pamidziyo inoda kushanda kwakasimba uye yakasimba, senge RF devices, photonic applications, uye sensors.

Dhayamita Range:50.8 mm kusvika 200 mm.

Ukobvu:Ukobvu hwakajairika hwe350 μm ± 25 μm nesarudzo dzemawafer akakora anosvika 500 μm.

Kuomarara:Ra ≤ 0.2 nm.

Kuwanda kweMapombi Madiki (MPD): ≤ 1 pa/cm².

Kuramba:Kudzivirira kwakanyanya, kunowanzo shandiswa muzvikamu zvekudzivirira muviri.

Kukombama: ≤ 30 μm (kune saizi diki), ≤ 45 μm kune dhayamita hombe.

TVV: ≤ 10 μm.

Saizi iripo 3inch 4inch 6inch 8inch

4H-P、6H-P&3C SiC wafer(Mawafer eSiC emhando yeP)

Kushandiswa:Zvikurukuru zvemagetsi nemidziyo ine mafrequency akawanda.

Dhayamita Range:50.8 mm kusvika 200 mm.

Ukobvu:350 μm ± 25 μm kana sarudzo dzakagadzirwa.

Kuramba:Mhando yeP 4H/6H-P: ≤ 0.1 Ω·cm (Z-grade), ≤ 0.3 Ω·cm (P-grade).

Kuomarara:Ra ≤ 0.2 nm (CMP kana MP).

Kuwanda kweMapombi Madiki (MPD):< 1 pa/cm².

TVV: ≤ 10 μm.

Kusabatanidzwa kweEdge:3 mm kusvika 6 mm.

Kukombama: ≤ 30 μm kune saizi diki, ≤ 45 μm kune saizi huru.

Saizi iripo 3inch 4inch 6inch5×5 10×10

Tafura yeZvikamu zveData Parameters

Pfuma

2 inches

3inch

4inch

6inchi

8inch

Rudzi

4H-N/HPSI/
6H-N/4H/6H-P/3C;

4H-N/HPSI/
6H-N/4H/6H-P/3C;

4H-N/HPSI//4H/6H-P/3C;

4H-N/HPSI//4H/6H-P/3C;

4H-N/HPSI/4H-SEMI

Dhayamita

50.8 ± 0.3 mm

76.2±0.3mm

100±0.3mm

150±0.3mm

200 ± 0.3 mm

Ukobvu

330 ± 25 um

350 ±25 um

350 ±25 um

350 ±25 um

350 ±25 um

350±25um；

500±25um

500±25um

500±25um

500±25um

kana kuti yakagadziriswa

kana kuti yakagadziriswa

kana kuti yakagadziriswa

kana kuti yakagadziriswa

kana kuti yakagadziriswa

Kuomarara

Ra ≤ 0.2nm

Ra ≤ 0.2nm

Ra ≤ 0.2nm

Ra ≤ 0.2nm

Ra ≤ 0.2nm

Kukombama

≤ 30um

≤ 30um

≤ 30um

≤ 30um

≤45um

TTV

≤ 10um

≤ 10um

≤ 10um

≤ 10um

≤ 10um

Kukwenya/Chera

CMP/MP

MPD

<1e/cm-2

<1e/cm-2

<1e/cm-2

<1e/cm-2

<1e/cm-2

Chimiro

Yakatenderera, Yakati sandara 16mm; Yehurefu 22mm; Yehurefu 30/32.5mm; Yehurefu 47.5mm; Cheka; Cheka;

Bevel

45°, Chikamu Chepamusoro; Chimiro cheC

 Giredhi

Giredhi rekugadzira reMOS&SBD; Giredhi rekutsvaga; Giredhi rekunyepedzera, Giredhi rewafer yembeu

Mashoko

Dhayamita, Ukobvu, Kutungamira, marongero ari pamusoro apa anogona kugadziriswa kana wakumbira

 

Mashandisirwo

·Magetsi Emagetsi

Mawafer emhando yeN SiC akakosha mumidziyo yemagetsi ine simba nekuda kwekugona kwawo kubata magetsi akawanda uye magetsi akawandisa. Anowanzo shandiswa mumagetsi anochinja magetsi, ma inverter, uye ma motor drive emaindasitiri akaita sesimba rinogona kudzoreredzwa, mota dzemagetsi, uye otomatiki yeindasitiri.

· Zvemagetsi zveOptoelectronics
Zvinhu zvemhando yeN SiC, kunyanya zvekushandisa optoelectronic, zvinoshandiswa mumidziyo yakaita sema LEDs nema laser diodes. Kupisa kwazvo uye mukana wakakura wekushanda kunoita kuti zvive zvakanaka pamidziyo optoelectronic inoshanda zvakanyanya.

·Zvishandiso zveKupisa Kwakanyanya
4H-N 6H-N SiC wafers dzakakodzera nzvimbo dzinopisa zvakanyanya, senge mumasensa nemidziyo yemagetsi inoshandiswa mundege, mota, uye maindasitiri uko kupisa uye kugadzikana pakupisa kwakakwirira zvakakosha.

·Zvishandiso zveRF
4H-N 6H-N SiC wafers dzinoshandiswa muzvishandiso zvemafrequency eredhiyo (RF) zvinoshanda munzvimbo dzine mafrequency akawanda. Dzinoshandiswa muhurongwa hwekutaurirana, tekinoroji yeradar, uye kutaurirana kwesatellite, uko kunodiwa kushanda nesimba uye kushanda nesimba zvakanyanya.

·Mashandisirwo ePhotonic
Muma photonics, maSiC wafers anoshandiswa pakushandisa ma photodetectors nema modulators. Hunhu hwechinhu ichi hunoita kuti chishande zvakanaka mukugadzira chiedza, modulation, uye kuona muma optical communication systems ne ma imaging devices.

·Masensa
Mawafer eSiC anoshandiswa mumhando dzakasiyana dzemasensa, kunyanya munzvimbo dzakaoma apo zvimwe zvinhu zvinogona kutadza kushanda. Izvi zvinosanganisira masensa ekupisa, kumanikidzwa, uye makemikari, ayo akakosha muminda yakaita semotokari, mafuta negesi, uye kutarisa nharaunda.

·Masisitimu Ekutyaira Mota Yemagetsi
Tekinoroji yeSiC inoita basa guru mumotokari dzemagetsi nekuvandudza mashandiro uye mashandiro ehurongwa hwekutyaira. NeSiC power semiconductors, mota dzemagetsi dzinogona kuwana hupenyu hwebhatiri huri nani, nguva yekuchaja nekukurumidza, uye kushanda nesimba kwakanyanya.

·MaSensor Epamusoro uye Magadzirirwo Emifananidzo
Mumasensa epamusoro-soro, maSiC wafers anoshandiswa kugadzira masensa ane hungwaru hwepamusoro ekushandiswa mumarobhoti, zvishandiso zvekurapa, uye kutarisa nharaunda. Muma photonic converters, hunhu hweSiC hunoshandiswa kuti hugone kushandura simba remagetsi kuita masaini ekuona, izvo zvakakosha mukutaurirana nefoni uye muzvivakwa zveinternet zvinomhanya.

Mibvunzo neMhinduro

QChii chinonzi 4H mu4H SiC?
A"4H" mu4H. SiC inoreva chimiro chekristaro chesilicon carbide, kunyanya chimiro chehexagonal chine zvikamu zvina (H). "H" inoratidza rudzi rwehexagonal polytype, ichiisiyanisa nedzimwe SiC polytypes dzakadai se6H kana 3C.

Q： Chii chinonzi 4H-SiC inofambiswa nekupisa?
A:Kufambiswa kwekupisa kwe4H-SiC (Silicon Carbide) kunosvika 490-500 W/m·K patembiricha yemumba. Kufambiswa kwekupisa kwakanyanya uku kunoita kuti ive yakakodzera kushandiswa mumagetsi emagetsi nenzvimbo dzinopisa zvakanyanya, uko kupisa kwakakosha.

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