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SiC Epitaxial Wafer yeMagetsi Emagetsi – 4H-SiC, N-type, Low Defect Density

SiC Epitaxial Wafer yeMagetsi Emagetsi – 4H-SiC, N-type, Low Defect Density Mufananidzo Unoratidzwa
  • SiC Epitaxial Wafer yeMagetsi Emagetsi – 4H-SiC, N-type, Low Defect Density
  • SiC Epitaxial Wafer yeMagetsi Emagetsi – 4H-SiC, N-type, Low Defect Density
  • SiC Epitaxial Wafer yeMagetsi Emagetsi – 4H-SiC, N-type, Low Defect Density

Tsananguro pfupi:

SiC Epitaxial Wafer ndiyo musimboti wezvishandiso zvemazuva ano zve semiconductor zvinoshanda zvakanyanya, kunyanya izvo zvakagadzirirwa kushanda zvine simba guru, mafrequency akawanda, uye tembiricha yepamusoro. Muchidimbu Silicon Carbide Epitaxial Wafer, SiC Epitaxial Wafer ine SiC epitaxial layer yemhando yepamusoro, yakatetepa inokura pamusoro peSiC substrate yakawanda. Kushandiswa kwetekinoroji yeSiC Epitaxial Wafer kuri kuwedzera nekukurumidza mumotokari dzemagetsi, magridi akangwara, masisitimu esimba rinodzokororwa, uye ndege nekuda kwehunhu hwayo hwepamusoro hwepanyama uye hwemagetsi zvichienzaniswa nemawafers echinyakare esilicon.


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SiC Epitaxial Wafer-4
SiC Epitaxial Wafer-6 - 副本

Nhanganyaya

SiC Epitaxial Wafer ndiyo musimboti wezvishandiso zvemazuva ano zve semiconductor zvinoshanda zvakanyanya, kunyanya izvo zvakagadzirirwa kushanda zvine simba guru, mafrequency akawanda, uye tembiricha yepamusoro. Muchidimbu Silicon Carbide Epitaxial Wafer, SiC Epitaxial Wafer ine SiC epitaxial layer yemhando yepamusoro, yakatetepa inokura pamusoro peSiC substrate yakawanda. Kushandiswa kwetekinoroji yeSiC Epitaxial Wafer kuri kuwedzera nekukurumidza mumotokari dzemagetsi, magridi akangwara, masisitimu esimba rinodzokororwa, uye ndege nekuda kwehunhu hwayo hwepamusoro hwepanyama uye hwemagetsi zvichienzaniswa nemawafers echinyakare esilicon.

Nheyo dzekugadzira dzeSiC Epitaxial Wafer

Kugadzira SiC Epitaxial Wafer kunoda nzira yekudzora vapor deposition (CVD) zvakanyanya. Epitaxial layer inowanzo kurimwa pa monocrystalline SiC substrate uchishandisa magasi akadai se silane (SiH₄), propane (C₃H₈), uye hydrogen (H₂) patembiricha inodarika 1500°C. Kukura kwe epitaxial iyi inodziya zvakanyanya kunoita kuti pave nekuenderana kwakanaka kwe crystalline uye kusakwana kuri pakati pe epitaxial layer ne substrate.

Maitiro acho anosanganisira matanho akakosha akati wandei:

  1. Kugadzirira Substrate: Chigadziko cheSiC wafer chinocheneswa uye chinokweshwa kuti chinyatsotsvedzerera.

  2. Kukura kweCVD: Mu reactor ine kuchena kwakanyanya, magasi anoita mhedzisiro yekuisa jira reSiC rimwe chete pa substrate.

  3. Kudzora Kushandisa Doping: Kushandiswa kweN-type kana P-type kunoiswa panguva ye epitaxy kuti uwane hunhu hwemagetsi hwaunoda.

  4. Kuongorora uye Metrology: Optical microscopy, AFM, uye X-ray diffraction zvinoshandiswa kusimbisa ukobvu hwelayer, huwandu hwedoping, uye defect density.

Wafer yega yega yeSiC Epitaxial inotariswa zvakanaka kuti irambe iine kuenzana kwakasimba pakukora, kusatsetseka kwepamusoro, uye kusimba. Kugona kugadzirisa ma parameter aya kwakakosha kune maMOSFET ane voltage yakawanda, maSchottky diodes, nezvimwe zvishandiso zvemagetsi.

Tsanangudzo

Paramita Tsanangudzo
Zvikamu Sainzi Yezvinhu, Zvikamu zveKristaro Rimwe Chete
Mhando yePolytype 4H
Kushandisa zvinodhaka zvisina kunaka Rudzi rweN
Dhayamita 101 mm
Dhayamita Kushivirira ± 5%
Ukobvu 0.35 mm
Kushivirira kwehukobvu ± 5%
Hurefu Hwepamusoro-soro 22 mm (± 10%)
TTV (Kusiyana Kwehukobvu Hwese) ≤10 µm
Kukombama ≤25 µm
FWHM ≤30 Arc-sec
Kupedzisa Kwepamusoro Rq ≤0.35 nm

Mashandisirwo eSiC Epitaxial Wafer

Zvigadzirwa zveSiC Epitaxial Wafer zvakakosha muzvikamu zvakasiyana:

  • Mota dzemagetsi (maEV): Midziyo yakagadzirwa neSiC Epitaxial Wafer inowedzera kushanda zvakanaka kwesimba remagetsi uye inoderedza huremu.

  • Simba Rinodzokororwa: Inoshandiswa muma inverters emagetsi ezuva nemhepo.

  • Zvishandiso zveMagetsi eMaindasitiri: Batidza kuchinja-chinja kwemafrequency akawanda, tembiricha yepamusoro nekurasikirwa kwakaderera.

  • Ndege neDziviriro: Yakanakira nzvimbo dzakaoma dzinoda masemiconductor akasimba.

  • Zviteshi zveBase zve5G: Zvikamu zveSiC Epitaxial Wafer zvinotsigira simba rakawanda rekushandisa RF.

SiC Epitaxial Wafer inoita kuti pave nemagadzirirwo akamanikana, kuchinja nekukurumidza, uye kushanda nesimba zvakanyanya kana tichienzanisa nemawafer esilicon.

Mabhenefiti eSiC Epitaxial Wafer

Tekinoroji yeSiC Epitaxial Wafer inopa mabhenefiti akakosha:

  1. Kuparara Kwemagetsi Kwakanyanya: Inodzivirira mavoltage anosvika gumi kupfuura maSi wafers.

  2. Kufambisa kwekupisa: SiC Epitaxial Wafer inobvisa kupisa nekukurumidza, zvichiita kuti michina ishande inotonhorera uye yakavimbika.

  3. Kumhanya Kwekukurumidza Kwekuchinja: Kurasikirwa kushoma kwekuchinja kunoita kuti pave nekushanda kwakasimba uye kudiki.

  4. Bandgap Yakafara: Inovimbisa kugadzikana pamagetsi netembiricha yakakwira.

  5. Kusimba Kwezvinhu: SiC haina makemikari uye yakasimba pakugadzira, yakakodzera kushandiswa kwakaoma.

Mabhenefiti aya anoita kuti SiC Epitaxial Wafer ive chinhu chinosarudzwa nechizvarwa chinotevera chemasemiconductor.

Mibvunzo Inowanzo bvunzwa: SiC Epitaxial Wafer

Mubvunzo 1: Ndeupi musiyano uripo pakati peSiC wafer neSiC Epitaxial Wafer?
Wafer yeSiC inoreva substrate yakawanda, nepo SiC Epitaxial Wafer iine layer yakagadzirwa nedoped inoshandiswa pakugadzira michina.

Mubvunzo wechipiri: Ndezvipi ukobvu huripo hweSiC Epitaxial Wafer layers?
Matanda eEpitaxial anowanzo bva pama micrometer mashoma kusvika anopfuura 100 μm, zvichienderana nezvinodiwa pakushandisa.

Mubvunzo wechitatu: Ko SiC Epitaxial Wafer yakakodzera here munzvimbo dzinopisa zvakanyanya?
Ehe, SiC Epitaxial Wafer inogona kushanda mumamiriro ezvinhu ari pamusoro pe600°C, ichipfuura silicon zvakanyanya.

Mubvunzo wechina: Sei kuwanda kwezvirema kuchikosha muSiC Epitaxial Wafer?
Kuwanda kwezvirema zvishoma kunovandudza mashandiro emuchina uye kugona kwawo, kunyanya pamashandisirwo emagetsi ane simba guru.

Mubvunzo 5: MaWafer eN-type neP-type SiC Epitaxial anowanikwa here?
Ehe, mhando dzese dziri mbiri dzinogadzirwa uchishandisa dopant gas control chaiyo panguva ye epitaxial process.

Mubvunzo wechitanhatu: Ndeapi saizi dzewafer dzakajairwa dzeSiC Epitaxial Wafer?
Madhayamita akajairika anosanganisira 2-inch, 4-inch, 6-inch, uye anowedzera 8-inch ekugadzira zvinhu zvakawanda.

Mubvunzo 7: SiC Epitaxial Wafer inokanganisa sei mutengo uye kushanda zvakanaka?
Kunyange zvazvo pakutanga ichidhura kupfuura silicon, SiC Epitaxial Wafer inoderedza kukura kwesystem uye kurasikirwa kwesimba, zvichivandudza kushanda zvakanaka kwemari kwenguva refu.

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