SiC ceramic tray plate graphite ine CVD SiC coating yemidziyo
Zvigadzirwa zvesimbi zvesilicon carbide hazvingoshandiswi chete padanho rekuisa firimu rakatetepa, senge epitaxy kana MOCVD, kana mukugadzira wafer, pakati pazvo matireyi ekutakura wafer eMOCVD anotanga kuiswa munzvimbo yekuisira, uye nekudaro haapindi kupisa nengura zvakanyanya. Zvigadzirwa zveSiC-coated zvine conductivity yepamusoro yekupisa uye hunhu hwakanaka hwekugovera kupisa.
Zvishandiso zvePure Chemical Vapor Deposition Silicon Carbide (CVD SiC) wafer zvinotakura zveMetal Organic Chemical Vapor Deposition (MOCVD) zvinopisa zvakanyanya.
Mawafer eCVD SiC akachena akanaka kupfuura mawafer ekare anoshandiswa mukuita uku, ayo ari graphite uye akafukidzwa neCVD SiC layer. Mawafer eCVD SiC aya akafukidzwa negraphite haakwanise kutsungirira tembiricha yepamusoro (1100 kusvika 1200 degrees Celsius) inodiwa kuti GaN iwane chiedza chakawanda chebhuruu nechena chemazuva ano. Tembiricha yepamusoro inoita kuti coating igadzire maburi madiki ayo makemikari anoparadza graphite iri pasi. Zvidimbu zvegraphite zvinobva zvabuda zvosvibisa GaN, zvichiita kuti wafer carrier itsiviwe.
CVD SiC ine kuchena kwe99.999% kana kupfuura uye ine simba rekupisa rakawanda uye inodzivirira kupisa. Saka, inogona kutsungirira tembiricha yakakwira uye mamiriro akaoma ekugadzirwa kwe LED kwakakwirira. Chinhu chakasimba che monolithic chinosvika pakuwanda kwedzidziso, chinoburitsa zvidimbu zvishoma, uye chinodzivirira ngura zvakanyanya uye kukurwa kwevhu. Chinhu ichi chinogona kuchinja kupenya uye simba rekufambisa pasina kuisa tsvina yesimbi. Zvishandiso zvewafer zvinowanzova 17 inches mudhayamita uye zvinogona kutakura mawafer anosvika 40 2-4 inches.
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