Zvishandiso zveSapphire Ingot Growth Czochralski CZ Nzira yekugadzira maWafers eSapphire ane 2inch-12inch

Tsananguro pfupi:

Zvishandiso zveSapphire Ingot Growth Equipment (Czochralski Method)​​isystem yemazuva ano yakagadzirirwa kukura kwesapphire single-crystal yakachena uye isina dambudziko. Nzira yeCzochralski (CZ) inobvumira kudzora kwakanyatsojeka kumhanya kwekudhonza kristalo yembeu (0.5–5 mm/h), kutenderera kwemuchina (5–30 rpm), uye tembiricha muiridium crucible, zvichigadzira axisymmetric crystals inosvika 300 mm​​ mudhayamita. Muchina uyu unotsigira kudzora kweC/A-plane crystal orientation​​, zvichibvumira kukura kweoptical-grade, electronic-grade, uye doped safira (semuenzaniso, Cr³⁺ ruby, Ti³⁺ star safira).

XKH inopa mhinduro dzinobva kumativi ose, kusanganisira kugadzirisa michina (kugadzirwa kwewafer ye 2–12-inch), kugadzirisa mashandiro (defect density <100/cm²), uye kudzidziswa kwehunyanzvi, pamwe nekugadzirwa kwewafer dzinopfuura 5,000 pamwedzi dzekushandisa senge LED substrates, GaN epitaxy, uye semiconductor packaging.


Zvinhu zvirimo

Nheyo yekushanda

Nzira yeCZ inoshanda nematanho anotevera:
1. Kunyungudutsa Zvinhu Zvisina Kugadzirwa: Kuchena kwakanyanya Al₂O₃ (kuchena >99.999%) inonyungudutswa muiridium crucible pa2050–2100°C.
2. Nhanganyaya yeKrista yeMbeu: Krista yembeu inodzikiswa muchikamu chinonyunguduka, yozoteverwa nekukweva nekukurumidza kuti igadzire mutsipa (dhayamita <1 mm) kubvisa kutsemuka.
3. Kuumbwa Kwemafudzi Uye Kukura Kwemafudzi: Kumhanya kwekudhonza kunoderedzwa kusvika pa 0.2–1 mm/awa, zvichiwedzera zvishoma nezvishoma dhayamita yekristaro kusvika pahukuru hwainotarisirwa (semuenzaniso, 4–12 inches).
4. Kunyungudutsa uye Kutonhodza: ​​Kristaro inotonhodzwa pa 0.1–0.5°C/min kuderedza kutsemuka kunokonzerwa nekupisa.
5. Mhando dzeKristaro Dzinoenderana:
Giredhi reMagetsi: Zvikamu zveSemiconductor (TTV <5 μm)
Giredhi reOptical: Mahwindo eUV laser (transmittance >90%@200 nm)
Mhando dzakaiswa dope: Ruby (Cr³⁺ concentration 0.01–0.5 wt.%), bhuruu resafire chubhu

Zvikamu zveSisitimu Yepakati

1. Sisitimu Yekunyungudutsa​​
Iridium Crucible: Inodzivirira kupisa kusvika 2300°C, haipindi ngura, inoenderana neyakanyunguduka yakakura (100–400 kg).
Induction Heating Furnace: Kudzora tembiricha kwakazvimirira munzvimbo dzakawanda (±0.5°C), magiraidi ekupisa akagadziridzwa.

2. Sisitimu yekudhonza nekutenderera​
Mota yeServo Yakanyatsogadzirwa: Kukwanisa kudhonza 0.01 mm/h, kutenderera kwakasimba <0.01 mm.
Chisimbiso cheMagineti Chemvura: Kutapurirana kusingabatanidzi chinhu kuti chirambe chichikura (> maawa makumi manomwe nemaviri).

3. Sisitimu Yekudzora Kupisa​​
Kudzora PID Closed-Loop​: Kugadzirisa simba remagetsi panguva chaiyo (50–200 kW) kuti simba remagetsi rigadzikane.
Dziviriro yeGasi Risina Kushanda​: Musanganiswa weAr/N₂ (99.999% kuchena) kudzivirira oxidation.

4. Kuzvigadzira uye Kutarisa​​
Kutarisa dhayamita yeCCD: Mhinduro chaiyo (kururama ± 0.01 mm).
Thermography yeInfrared: Inotarisa chimiro chechimiro chesolid-liquid.

Kuenzanisa Nzira yeCZ vs. KY

Paramita Nzira yeCZ Nzira yeKY
Saizi yeKristaro Yakanyanya 300 mm (12 inches) 400 mm (ingot yakaita sepeya)
Kuwanda Kwezvikanganiso <100/cm² <50/cm²
Kukura Kwehuwandu 0.5–5 mm/awa 0.1–2 mm/awa
Kushandiswa Kwesimba 50–80 kWh/kg 80–120 kWh/kg
Mashandisirwo​​ Zvigadziko zve LED, GaN epitaxy Mahwindo ekuona, ma ingot makuru
Mutengo Zviri pakati nepakati (kudyara mari yakawanda mumidziyo) Maitiro akakwirira (akaoma)

Zvishandiso Zvikuru

1. Indasitiri yeSemiconductor​​
Zvidimbu zveGaN Epitaxial​​: mawafer ane 2–8-inch (TTV <10 μm) eMicro-LEDs nema laser diodes.
MaWafer eSOI: Kuomarara kwepamusoro <0.2 nm kwemachipisi akabatanidzwa ne3D.

2. Optoelectronics​​
Mahwindo eLaser eUV: Simba remagetsi rinokwana 200 W/cm² rinomira mu lithography optics.
Zvikamu zveInfrared​: Kuwanda kwemvura inonyudzwa <10⁻³ cm⁻¹ yemifananidzo yekupisa.

3. Zvemagetsi zveVatengi​​
Makavha eKamera yeSmartphone: Kuomarara kweMohs 9, 10 × kuvandudzwa kwekudzivirira kukwenya.
MaSmartwatch Displays: Ukobvu 0.3–0.5 mm, transmittance >92%.

4. Dziviriro neNdege​​
Mahwindo eNuclear Reactor​: Kukwanisa kupenya nemwaranzi kusvika pa10¹⁶ n/cm².
Magirazi eLaser Ane Simba Repamusoro: Kuchinja kwekupisa <λ/20@1064 nm.

Mabasa eXKH

1. Kugadzirisa Zvishandiso​​
Dhizaini yeKamuri Rinogona Kukura​​: Φ200–400 mm magadzirirwo ekugadzira wafer ine 2–12-inch.
Kuchinjika kweDoping: Inotsigira rare-earth (Er/Yb) uye transition-metal (Ti/Cr) doping yezvigadzirwa zve optoelectronic zvakagadzirwa.

2. Rutsigiro rweKubva Kumagumo​
Kugadzirisa Maitiro​: Mabikirwo akagadziriswa kare (50+) ezvishandiso zve LED, RF, uye zvikamu zvakaomeswa nemwaranzi.
Global Service Network: Kuongorora chirwere chiri kure maawa makumi maviri nemana pazuva, mazuva manomwe pasvondo, uye kugadzirisa chiri panzvimbo yacho newarandi yemwedzi makumi maviri nemana.

3. Kugadziriswa kwemvura
Kugadzira Wafer: Kucheka, kukuya, uye kupolisha mawafer ane 2–12-inch (C/A-plane).
Zvigadzirwa Zvinowedzera Kukosha:
Zvikamu zveOptical: Mahwindo eUV/IR (ukobvu hwe0.5–50 mm).
Zvinhu zvemhando yepamusoro zvezvishongo: Cr³⁺ ruby ​​(yakabvumidzwa neGIA), Ti³⁺ nyeredzi yesafire.

4. Hutungamiriri hwehunyanzvi​​
Zvitupa: mawafer anotevedzera EMI.
Mapatenti: Mapatenti makuru muCZ method innovation.

Mhedziso

Midziyo yeCZ method inoita kuti ienderane nehukuru, ine zvikanganiso zvishoma, uye ine kugadzikana kwakanyanya, zvichiita kuti ive chiyero cheindasitiri che LED, semiconductor, uye mashandisirwo ekudzivirira. XKH inopa rutsigiro rwakakwana kubva pakuisa michina kusvika pakugadzirisa mushure mekukura, zvichiita kuti vatengi vawane kugadzirwa kwemakristaro esapphire anodhura uye anoshanda zvakanyanya.

Chitofu chekukura chengot chesapphire 4
Chitofu chekukura chengot chesapphire 5

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