Silicon carbide (SiC) haisisiri semiconductor chete. Hunhu hwayo hwemagetsi nekupisa hunoshamisa hunoita kuti ive yakakosha pamagetsi emagetsi echizvarwa chinotevera, maEV inverters, zvishandiso zveRF, uye mashandisirwo emagetsi ane frequency yakakwira. Pakati peSiC polytypes,4H-SiCuye6H-SiCzvinotonga musika—asi kusarudza chakakodzera kunoda zvinopfuura kungoti “izvo zvakachipa.”
Chinyorwa chino chinopa kuenzanisa kwakawanda kwe4H-SiCuye 6H-SiC substrates, dzinofukidza chimiro chekristaro, magetsi, kupisa, hunhu hwemakanika, uye mashandisirwo akajairika.
1. Chimiro cheKristaro uye Kutevedzana kweKuisa Zvinhu
SiC chinhu chakafanana nepolymorphic, zvichireva kuti chinogona kuvapo muzvimiro zvakawanda zvekristaro zvinonzi polytypes. Kutevedzana kweSi–C bilayers pamwe ne c-axis kunotsanangura mapolytypes aya:
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4H-SiC: Kutevedzana kwematanho mana → Kuenzana kwepamusoro kwakatevedzana ne c-axis.
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6H-SiC: Kutevedzana kwekurongedza kwezvikamu zvitanhatu → Kuenzana kwakaderera zvishoma, chimiro chebhendi chakasiyana.
Musiyano uyu unokanganisa kufamba kwemutakurwi, gap, uye maitiro ekupisa.
| Chinhu | 4H-SiC | 6H-SiC | Zvinyorwa |
|---|---|---|---|
| Kuisa zvidimbu muzvikamu | ABCB | ABCACB | Inosarudza chimiro chebhendi uye simba rekutakura |
| Kuenzana kwekristaro | Hexagonal (yakafanana zvakanyanya) | Hexagonal (yakarebeswa zvishoma) | Inokanganisa kuchekwa, kukura kwe epitaxial |
| Saizi dzakajairika dzewafer | 2–8 inches | 2–8 inches | Kuwanikwa kuri kuwedzera kwemaawa mana, uye kuri kukura kwemaawa matanhatu |
2. Zvivakwa zveMagetsi
Musiyano wakakosha uri mukushanda kwemagetsi. Pamagetsi nemidziyo ine mafrequency akakwira,kufamba kwemaerekitironi, gap, uye resistivityzvinhu zvikuru.
| Pfuma | 4H-SiC | 6H-SiC | Kukanganiswa kweMudziyo |
|---|---|---|---|
| Bhandiji | 3.26 eV | 3.02 eV | Bandgap yakakura mu4H-SiC inobvumira voltage yakakwira yekupwanyika, uye kudonha kwemvura kushoma |
| Kufamba kwemaerekitironi | ~1000 cm²/V·s | ~450 cm²/V·s | Kuchinja nekukurumidza kwemidziyo ine voltage yakawanda mu4H-SiC |
| Kufamba kwegomba | ~80 cm²/V·s | ~90 cm²/V·s | Hazvina kukosha zvakanyanya kune akawanda maturusi emagetsi |
| Kuramba | 10³–10⁶ Ω·cm (inodziisa zvishoma) | 10³–10⁶ Ω·cm (inodziisa zvishoma) | Zvakakosha kuti RF uye epitaxial kukura zvakafanana |
| Dielectric constant | ~10 | ~9.7 | Yakakwira zvishoma mu4H-SiC, inokanganisa kugona kwemuchina |
Chinhu Chinokosha Chekudzidza:Kune maMOSFET ane simba, maSchottky diodes, uye switching inomhanyisa, 4H-SiC ndiyo inosarudzwa. 6H-SiC yakakwana kune zvishandiso zvine simba shoma kana RF.
3. Zvimiro zvekupisa
Kupisa kwakakosha pamidziyo ine simba guru. 4H-SiC inowanzoita zviri nani nekuda kwekufambiswa kwayo kwekupisa.
| Pfuma | 4H-SiC | 6H-SiC | Zvazvinoreva |
|---|---|---|---|
| Kufambisa kwekupisa | ~3.7 W/cm·K | ~3.0 W/cm·K | 4H-SiC inoderedza kupisa nekukurumidza, ichideredza kushushikana kwekupisa |
| Kuwanda kwekuwedzera kwekupisa (CTE) | 4.2 ×10⁻⁶ /K | 4.1 ×10⁻⁶ /K | Kufananidza ne epitaxial layers kwakakosha kudzivirira wafer warping |
| Kupisa kwakanyanya kwekushanda | 600–650 °C | 600 °C | Dzese dziri mbiri, 4H zviri nani zvishoma pakushanda nesimba rakawanda kwenguva refu |
4. Zvimiro zveMichina
Kugadzikana kwemuchina kunokanganisa kubata kwewafer, kuchekerera, uye kuvimbika kwenguva refu.
| Pfuma | 4H-SiC | 6H-SiC | Zvinyorwa |
|---|---|---|---|
| Kuoma (Mohs) | 9 | 9 | Dzese dzakaoma zvikuru, dziri mbiri chete mushure medhaimani |
| Kusimba kwekutyoka | ~2.5–3 MPa·m½ | ~2.5 MPa·m½ | Zvakafanana, asi 4H yakaenzana zvishoma |
| Ukobvu hwewafer | 300–800 µm | 300–800 µm | Mawafer akatetepa anoderedza kupisa asi anowedzera njodzi yekubata |
5. Mashandisirwo Akajairika
Kunzwisisa kuti mhando imwe neimwe yepolytype inobudirira sei kunobatsira pakusarudza substrate.
| Chikamu Chekushandisa | 4H-SiC | 6H-SiC |
|---|---|---|
| MOSFETs dzine simba guru | ✔ | ✖ |
| Madiode eSchottky | ✔ | ✖ |
| Zvigadziri zvemagetsi zvemotokari | ✔ | ✖ |
| Midziyo yeRF / microwave | ✖ | ✔ |
| Ma LED uye ma optoelectronics | ✖ | ✔ |
| Zvigadzirwa zvemagetsi zvine simba shoma | ✖ | ✔ |
Mutemo weChigunwe Chidiki:
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4H-SiC= Simba, kumhanya, kushanda zvakanaka
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6H-SiC= RF, simba shoma, cheni yekupa zvinhu yakakura
6. Kuwanikwa uye Mutengo
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4H-SiC: Zvakagara zvichinetsa kukura, ikozvino zvava kuwanikwa. Mutengo wakakwira zvishoma asi wakakodzera kushandiswa kwepamusoro-soro.
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6H-SiC: Kuwanikwa kwemagetsi kwakakura, kazhinji mutengo wakaderera, kunoshandiswa zvakanyanya pamagetsi eRF nemagetsi ane simba shoma.
Kusarudza Substrate Yakakodzera
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Magetsi emagetsi ane simba guru uye anomhanya zvakanyanya:4H-SiC inokosha.
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Midziyo yeRF kana ma LED:6H-SiC inowanzo kukwana.
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Mashandisirwo anoshandiswa pakupisa:4H-SiC inopa kupisa kuri nani.
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Zvaunofanira kufunga nezvebhajeti kana zvekugovera:6H-SiC inogona kuderedza mutengo pasina kukanganisa zvinodiwa nemudziyo.
Pfungwa Dzekupedzisira
Kunyange zvazvo 4H-SiC ne6H-SiC zvingaita seziso risina kudzidziswa, musiyano wadzo unosanganisira chimiro chekristaro, kufamba kwemaerekitironi, kufambisa kwekupisa, uye kukodzera kushandiswa. Kusarudza polytype chaiyo pakutanga kweprojekiti yako kunoita kuti pave nekushanda kwakanaka, kugadziriswa kushoma, uye michina yakavimbika.
Nguva yekutumira: Ndira-04-2026