LiTaO₃ Ingots 50mm – 150mm Dhayamita X/Y/Z-Kuchekwa Kwekutenderera ±0.5° Kushivirira
Magadzirirwo ehunyanzvi
Tsanangudzo | Zvakajairika | Kunyatsoongorora |
Zvinhu | LiTaO3(LT)/ LiNbO3 mawafer | Mawafer eLiTaO3(LT)/LiNbO3 |
Kudzidziswa | X-112°Y,36°Y,42°Y±0.5° | X-112°Y,36°Y,42°Y±0.5° |
Yakafanana | 30″ | 10'' |
Yakamira yakatwasuka | 10′ | 5' |
Hunhu hwepamusoro | 40/20 | 20/10 |
Kukanganiswa kweMafungu | λ/4@632nm | λ/8@632nm |
Kufara Kwepamusoro | λ/4@632nm | λ/8@632nm |
Aperture yakajeka | >90% | >90% |
Chamfer | <0.2×45° | <0.2×45° |
Kushivirira kwehukobvu/dhayamita | ± 0.1 mm | ± 0.1 mm |
Zviyero zvepamusoro | dia150×50mm | dia150×50mm |
LiTaO₃ Ingot - Hunhu Hukuru
1. Kushanda Kwepamusoro KwemaPiezoelectric & Acoustic Performance
High piezoelectric coefficient (d₃₃~8 pC/N): Inoshanda zvakanaka kupfuura LiNbO₃ (~6 pC/N), zvichiita kuti mafirita eSAW/BAW ane frequency yakakwira awane kurasikirwa kwakanyanya (<1.2 dB) kwe5G RF frontends.
Kubatana kwakasimba kwemagetsi (K²~0.5%): Kunowedzera bandwidth uye kushanda zvakanaka kweSub-6GHz uye mmWave communication systems.
2. Kugadzikana Kunoshamisa Kwekupisa
Tembiricha yepamusoro yeCurie (600°C): Inochengetedza mashandiro epiezoelectric akagadzikana kubva pa -50°C kusvika 300°C, yakakodzera kushandiswa kwemagetsi emotokari nemasensa emaindasitiri.
Kuwanda kwekupisa kwakaderera (7.5×10⁻⁶/K): Kunoderedza kuyerera kwekupisa mumidziyo yakanyatsogadzirwa.
3. Kusimba kweMaziso neMakemikoro
Kujeka kweBroadband (400-5000 nm): >70% transmittance yemahwindo eIR uye ma electro-optic modulators.
Kusashanda kwemakemikari: Inodzivirira maasidhi/maalkaline, yakakodzera kushandiswa mundege nekudzivirira munzvimbo dzakaoma.
4. Kugona Kwekugadzirisa
Uinjiniya hwekutungamira: X/Y/Z-cut ingots (±0.5° tolerance) yezvigadzirwa zvepiezoelectric/optical zvakagadzirwa.
Kugadzirisa kushandiswa kwedoping: Kushandiswa kweMg-doping kuti irambe kukuvara kwemaziso; Kushandiswa kweZn-doping kuti iwedzere mhinduro yepiezoelectric.
LiTaO₃ Ingot - Mashandisirwo Ekutanga
1. 5G & RF Communications
Mafirita eSAW/BAW: Shandisa mafirita emagetsi ane ruzha rwakanyanya (2-10 GHz), asinganyanyi kurasikirwa nemasaini mumafoni nemabhesi.
Ma resonator eFBAR: Anopa Q-factor yakakwira (>1000) kune ma RF oscillators.
2. Matekinoroji eOptics neInfrared
Mahwindo ekuona IR: Shandisa kujeka kwebroadband pamifananidzo yekupisa uye kuongorora kwemauto.
Mamodulator eElectro-optic: Anobatsira pakugadzirisa masaini emagetsi anomhanya zvakanyanya mufiber optics.
3. Kuona Mota & Maindasitiri
Masensa eUltrasonic: Ekubatsira pakupaka mota uye TPMS, anotsungirira tembiricha yenzvimbo yeinjini.
Masensa ekumanikidza ane tembiricha yepamusoro: Kushanda kwakavimbika mukutsvaga mafuta uye kudzora maindasitiri.
4. Dziviriro & Ndege
Mafirita eEW: Akaomeswa nemwaranzi yeradar/masisitimu ekutaurirana emauto.
Zvikamu zvekutsvaga zvombo: Kugadzikana kwekupisa kunovimbisa kuvimbika mumamiriro ezvinhu akaipisisa.
5. Zvigadzirwa zvemagetsi zvevatengi
RF frontend modules: Wedzera kusarudza kwemasaini mumafoni.
Masensa epamba akangwara: Kutarisa kweUltrasonic uye kuziva masaini.
Mabhenefiti Akakosha eLiTaO₃ Ingots
1. Hunhu Hwakanaka uye Kugara Kwakafanana kweCrystal
LiTaO₃ Ingots dzinogadzirwa uchishandisa Ta₂O₅ (≥99.999%) yakachena uye nzira yakagadziriswa yeCzochralski (CZ), zvichiita kuti:
Kuwanda kwedenda rakaderera zvakanyanya (dislocations <500 cm⁻², inclusions ≤5/cm³)
Kusiyana kweAxial/radial resistivity <5% (kuona kuti batch-to-batch consistency)
Kurongeka kwekutarisa kweX/Y/Z-cut ±0.5° (kusangana nezvinodiwa zveSAW device phase coherence)
2. Kushanda Kwepamusoro KwemaPiezoelectric uye Kupisa
High piezoelectric coefficient (d₃₃~8 pC/N), 30% yakakwira kupfuura LiNbO₃, yakakodzera dhizaini yeBAW filter ine frequency yakakwira
Tembiricha yeCurie 600°C (nzvimbo yekushanda -50~300°C), ichichengetwa munzvimbo dzakanyanya kuipa:
Kuwanda kwekupisa kwefrequency (TCF) <|-15ppm/°C|
Kuchinja kwe electromechanical coupling coefficient (K²) <0.5%
3. Kugadzirisa uye Kubatanidza Kuchinjika
Kugadziriswa kwedoping (MgO 0-8mol%):
Kushandiswa kwe5mol% MgO kunowedzera mwero wekukuvadzwa nelaser nekagumi
Kushandiswa kweZn doping kunogadzirisa kurasikirwa kwe dielectric mu microwave (tanδ<0.001 @10GHz)
Kubatanidzwa kwakasiyana-siyana: Kunotsigira kugadzirwa kweLNOI (LiTaO₃-on-Insulator) thin-film uye kubatana neSi/SiN photonic chips
4. Kuvimbiswa Kwekugovera Kunogona Kuwedzerwa
Tekinoroji yekugadzira zvinhu zvemainji matanhatu (150mm): kudzikiswa kwemitengo ne40% zvichienzaniswa ne4-inch
Kutumirwa nekukurumidza: Maitiro akajairwa anowanikwa kubva muchitoro (nguva yekutungamirwa kwemavhiki matatu), inotsigira kugadzirisa kwezvikamu zvidiki kubva pa5kg (nguva yekutenderera kwemavhiki mana)
LiTaO₃ Ingot - XKH Services
1. Kushanda Nesimba Mumutengo: Ma ingot e 8-inch anoderedza marara echinhu ne30% zvichienzaniswa ne 4-inch dzimwe nzira, zvichideredza mitengo ye payuniti ne 18%.
2. Zviyero zveMashandiro:
Bandwidth yeSAW Filter: >1.28 GHz (zvichienzaniswa ne0.8 GHz yeLiTaO3), yakakosha kumabhendi e5G mmWave.
Kufamba Kwemhepo Nekupisa: Inopona -200–500°C cycles ine <0.05% warpage, yakasimbiswa mukuyedzwa kweLiDAR yemotokari.
1. Kugara kwenguva refu: Nzira dzekugadzirisa dzinoshandiswazve dzinoderedza kushandiswa kwemvura ne40% uye kushandiswa kwesimba ne25%.
Mhedziso
Zvishandiso zveLiTaO₃ zvinoramba zvichikurudzira hunyanzvi mukutaurirana kwe5G, photonics, uye masisitimu ekudzivirira kuburikidza nehunhu hwavo hwe piezoelectric hwakasiyana uye kugona kwavo kutsungirira nharaunda. Hunyanzvi hwedu hwezvinhu, kugadzirwa kunowedzera, uye rutsigiro rweinjiniya yemashandisirwo zvinotiisa semubatsiri anodiwa kune masisitimu emagetsi epamusoro.









