Nzira yeCVD yekugadzira zvinhu zveSiC zvakachena zvakanyanya muchoto chesilicon carbide synthesis pa1600℃

Tsananguro pfupi:

Chitofu chekugadzira cheSilicon carbide (SiC) (CVD). Chinoshandisa tekinoroji yeChemical Vapor Deposition (CVD) ku₄ gaseous silicon sources (semuenzaniso SiH₄, SiCl₄) munzvimbo inodziya zvakanyanya umo vanopindura kune carbon sources (semuenzaniso C₃H₈, CH₄). Chishandiso chakakosha chekurimisa high-purity silicon carbide crystals pa substrate (graphite kana SiC seed). Iyi tekinoroji inonyanya kushandiswa pakugadzira SiC single crystal substrate (4H/6H-SiC), inova ndiyo core process equipment yekugadzira power semiconductors (senge MOSFET, SBD).

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Zvinhu zvirimo

Kushanda musimboti:

1. Kuwanikwa kwechinhu chisati chatanga. Magasi esilicon (semuenzaniso SiH₄) necarbon (semuenzaniso C₃H₈) anosanganiswa zvakaenzana uye anoiswa mukamuri rereaction.

2. Kuora kwemhepo pakupisa kwakanyanya: Pakupisa kwakanyanya kwe1500~2300℃, kuora kwemhepo pagasi kunogadzira maatomu anoshanda eSi neC.

3. Kuita kwepazasi: Maatomu eSi neC anoiswa pamusoro pepasi kuti aumbe SiC crystal layer.

4. Kukura kwekristaro: Kuburikidza nekudzora kukwira kwekupisa, kuyerera kwegasi uye kumanikidzwa, kuti uwane kukura kwakanangana nechikamu che c kana chikamu che a.

Zvikamu zvikuru:

· Tembiricha: 1600~2200℃ (>2000℃ ye4H-SiC)

· Kudzvanywa: 50~200mbar (kudzvanywa kwakaderera kuderedza gasi)

· Chiyero chegasi: Si/C≈1.0~1.2 (kudzivirira kusakwana kweSi kana C)

Zvinhu zvikuru:

(1) Hunhu hwekristaro
Kuwanda kwemasero asina kukwana: kuwanda kwema microtubule < 0.5cm ⁻², kuwanda kwemasero asina kugadzikana < 10⁴ cm⁻².

Kudzora mhando dzemakristalline: kunogona kukura 4H-SiC (mainstream), 6H-SiC, 3C-SiC nedzimwe mhando dzemakristaro.

(2) Kushanda kwemidziyo
Kugadzikana kwekupisa kwakanyanya: graphite induction heating kana resistance heating, tembiricha >2300℃.

Kudzora kufanana: kuchinja-chinja kwetembiricha ±5℃, mwero wekukura 10~50μm/h.

Sisitimu yegesi: Chiyero chemagetsi chemagetsi chakanyatsojeka (MFC), kuchena kwegesi ≥99.999%.

(3) Zvakanakira tekinoroji
Kuchena kwakanyanya: Kuwanda kwetsvina yekumashure <10¹⁶ cm⁻³ (N, B, nezvimwewo).

Saizi hombe: Inotsigira kukura kwesimbi yeSiC ine mativi matanhatu nehafu.

(4) Kushandiswa kwesimba uye mutengo
Kushandiswa kwesimba rakawanda (200~500kW·h pachoto chimwe nechimwe), zvichiita 30%~50% yemari yekugadzira SiC substrate.

Zvishandiso zvikuru:

1. Simba remagetsi e semiconductor substrate: SiC MOSFETs dzekugadzira mota dzemagetsi uye ma photovoltaic inverters.

2. Mudziyo weRF: 5G base station GaN-on-SiC epitaxial substrate.

3. Midziyo yezvakatipoteredza yakanyanyisa: masensa ekupisa kwakanyanya emuchadenga nemagetsi enyukireya.

Tsanangudzo yehunyanzvi:

Tsanangudzo	Zvidimbu
Zviyero (L × W × H)	4000 x 3400 x 4300 mm kana kugadzirisa
Dhayamita yekamuri yevira	1100mm
Kukwanisa kurodha	50kg
Dhigirii remuganho wevacuum	10-2Pa (maawa maviri mushure mekunge pombi yemorekuru yatanga)
Kukwira kwedzvinyiriro yekamuri	≤10Pa/h (mushure mekuyereswa kwecalcium)
Kusimudza sitiroko yekusimudza chifukidziro chechoto chepasi	1500mm
Nzira yekudziyisa	Kupisa kwe induction
Kupisa kwakanyanya muchoto	2400°C
Simba rekudziyisa	2X40kW
Kuyerwa kwekupisa	Kuyerwa kwekupisa kwe infrared kwemavara maviri
Tembiricha yekudziya	900~3000℃
Kururama kwekudzora tembiricha	±1°C
Kudzora kumanikidzwa kwenzvimbo	1~700mbar
Kururama Kwekudzora Kumanikidzwa	1~5mbar ±0.1mbar; 5~100mbar ±0.2mbar; 100~700mbar ±0.5mbar
Nzira yekurodha	Kutakura kwakaderera;
Sarudzo yekugadzirisa	Nzvimbo yekuyera tembiricha kaviri, yekuburitsa forklift.

Masevhisi eXKH:

XKH inopa masevhisi ekushanda kwezvikamu zvese zvesilicon carbide CVD, kusanganisira kugadzirisa michina (dhizaini yenzvimbo yekupisa, magadzirirwo egasi system), kugadzira maitiro (kudzora kristalo, kugadzirisa zvikanganiso), kudzidziswa kwehunyanzvi (kushanda nekugadzirisa) uye rutsigiro rwekutengesa mushure mekutengesa (kupa zvikamu zvakakosha, kuongororwa kuri kure) kubatsira vatengi kuwana kugadzirwa kwemhando yepamusoro kweSiC substrate. Uye kupa masevhisi ekuvandudza maitiro kuti varambe vachivandudza goho rekristaro uye kushanda zvakanaka kwekukura.