6 Inch Conductive SiC Composite Substrate 4H Dhayamita 150mm Ra≤0.2nm Warp≤35μm

6 Inch Conductive SiC Composite Substrate 4H Diameter 150mm Ra≤0.2nm Warp≤35μm Mufananidzo Unoratidzwa

Tsananguro pfupi:

Zvichitungamirirwa nekutsvaga kweindasitiri yesemiconductor kushanda kwepamusoro uye mutengo wakaderera, substrate yeSiC composite ye6-inch yakabuda. Kuburikidza netekinoroji itsva yezvinhu zvinosanganisa magetsi, iyi wafer ye6-inch inowana 85% yekushanda kwemawafer echinyakare e8-inch uku ichidhura 60% chete. Midziyo yemagetsi inoshandiswa zuva nezuva senge nzvimbo dzekuchaja mota itsva, mamodule e5G base station power, uye kunyange madhiraivha anochinja-chinja mumidziyo yepamusoro yepamba inogona kunge yatove kushandisa substrates dzerudzi urwu. Tekinoroji yedu yekukura kwe multi-layer epitaxial ine patent inogonesa atomic-level flat composite interfaces paSiC bases, ine interface state density iri pasi pe1×10¹¹/cm²·eV - chimiro chasvika padanho repamusoro pasi rose.

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Zvinhu zvirimo

Magadzirirwo ehunyanzvi

Zvinhu	Kugadzirwagiredhi	Dummygiredhi
Dhayamita	6-8 inches	6-8 inches
Ukobvu	350/500±25.0 μm	350/500±25.0 μm
Mhando yePolytype	4H	4H
Kuramba	0.015-0.025 ohm·cm	0.015-0.025 ohm·cm
TTV	≤5 μm	≤20 μm
Kukombama	≤35 μm	≤55 μm
Kukombama kwepamberi (Si-face)	Ra≤0.2 nm (5μm×5μm)	Ra≤0.2 nm (5μm×5μm)

Zvinhu Zvikuru

1. Kubatsira Kwemutengo: Substrate yedu yeSiC composite ine 6-inch inoshandisa tekinoroji ye "graded buffer layer" iyo inogadzirisa kuumbwa kwezvinhu kuti ideredze mitengo yezvinhu zvisina kugadzirwa ne38% uku ichichengetedza mashandiro akanaka emagetsi. Kuyerwa chaiko kunoratidza kuti michina ye650V MOSFET inoshandisa substrate iyi inoderedza mutengo ne42% pachikamu chimwe nechimwe zvichienzaniswa nemhinduro dzechinyakare, izvo zvakakosha pakusimudzira kushandiswa kwemidziyo yeSiC mumagetsi evatengi.
2. Hunhu Hwakanaka Hwekudzora Kuyerera: Kuburikidza nemaitiro chaiwo ekudzora nitrogen doping, substrate yedu yeSiC composite ine 6-inch inowana resistivity yakaderera kwazvo ye0.012-0.022Ω·cm, nekusiyana kunodzorwa mukati me ±5%. Zvinonyanya kukosha, tinoramba tichichengetedza resistivity yakafanana kunyangwe mukati me5mm edge region yewafer, tichigadzirisa dambudziko re edge effect ragara riripo kwenguva refu muindasitiri.
3. Kushanda Kwekupisa: Module ye1200V/50A yakagadzirwa tichishandisa substrate yedu inoratidza chete kukwira kwekupisa kwejunction ye45℃ pamusoro pemamiriro ekunze panguva yekushanda kwakazara - 65℃ yakaderera pane zvishandiso zvakafanana zvesilicon. Izvi zvinogoneswa nechimiro chedu che "3D thermal channel" chinovandudza conductivity yekupisa kwerutivi kusvika ku380W/m·K uye vertical thermal conductivity kusvika ku290W/m·K.
4. Kuenderana Kwemaitiro: Kuti tiwane chimiro chakasiyana che6-inch conductive SiC composite substrates, takagadzira nzira yekucheka nelaser stealth, tichikwanisa kucheka nekukurumidza kwe200mm/s uku tichidzora edge chipping iri pasi pe0.3μm. Pamusoro pezvo, tinopa sarudzo dze pre-nickel-plated substrate dzinogonesa direct die bonding, zvichiponesa vatengi matanho maviri ekuita.

Zvikumbiro Zvikuru

Midziyo Yegridi Yakakosha:

Mumasisitimu ekutumira magetsi emagetsi anotungamira magetsi (UHVDC) anoshanda pa ±800kV, zvishandiso zveIGCT zvinoshandisa substrates dzedu dzeSiC composite dzinofambisa magetsi dzinoratidza kuvandudzwa kunoshamisa kwekushanda. Midziyo iyi inoderedza kurasikirwa kwekuchinja ne55% panguva yekuchinja kwemagetsi, ukuwo ichiwedzera kushanda zvakanaka kwesystem kusvika pa99.2%. Kufambisa kwemafuta emagetsi ...

Masimba eMotokari Itsva yeSimba:

Sisitimu yekufambisa ine ma "6-inch conductive SiC composite substrates" edu inoita kuti simba re inverter rive guru kupfuura mamwe ese e45kW/L - 60% yekuvandudzika kupfuura dhizaini yavo yekare ye400V silicon. Chinonyanya kushamisa ndechekuti sisitimu iyi inochengetedza kushanda zvakanaka kwe98% pakupisa kwese kwekushanda kubva pa -40℃ kusvika +175℃, zvichigadzirisa matambudziko ekushanda kwemamiriro ekunze anotonhora ayo atambudza kushandiswa kweEV munzvimbo dzekuchamhembe. Kuedzwa kwechokwadi kunoratidza kuwedzera kwe7.5% muhuwandu hwemotokari dzine tekinoroji iyi munguva yechando.

Madhiraivha Anochinja-chinja eMaindasitiri:

Kushandiswa kwema substrates edu muma intelligent power modules (IPMs) eindasitiri yeservo systems kuri kushandura manufacturing automation. Munzvimbo dzeCNC machining, ma module aya anopa mhinduro yemota nekukurumidza ne40% (zvichideredza nguva yekumhanyisa kubva pa50ms kusvika pa30ms) ukuwo zvichideredza ruzha rwe electromagnetic ne15dB kusvika pa65dB(A).

Zvigadzirwa zvemagetsi zvevatengi:

Kuchinja kwemagetsi evatengi kuri kuenderera mberi nekushandisa ma substrates edu achigonesa machaja e65W GaN echizvarwa chinotevera. Aya ma compact power adapters anoderedza vhoriyamu ne30% (kusvika pa45cm³) uku achichengetedza simba rakazara, nekuda kwehunhu hwekuchinja hwemagadzirirwo akavakirwa paSiC. Kufungidzira kwekupisa kunoratidza tembiricha yepamusoro ye68°C chete panguva yekushanda nguva dzose - 22°C inotonhorera kupfuura magadzirirwo emazuva ese - zvichivandudza zvakanyanya hupenyu hwechigadzirwa uye kuchengetedzeka.

Mabasa Ekugadzirisa XKH

XKH inopa rutsigiro rwakakwana rwekugadzirisa ma substrates eSiC composite ane 6-inch conductive:

Kugadzirisa Ukobvu: Sarudzo dzinosanganisira 200μm, 300μm, uye 350μm specifications
2. Kudzora Kudzivirira: Kugadziriswa kwehuwandu hwen-type doping kubva pa1×10¹⁸ kusvika 5×10¹⁸ cm⁻³

3. Kutarisa kweCrystal: Rutsigiro rwekutarira kwakasiyana-siyana kunosanganisira (0001) off-axis 4° kana 8°

4. Masevhisi Ekuyedza: Mishumo yakazara yekuyedza parameter yewafer-level

Nguva yatiri kutarisira kubva pakugadzira zvinhu kusvika pakugadzira zvinhu zvakawanda inogona kuva pfupi semavhiki masere. Kune vatengi vane ruzivo rwakakwana, tinopa mabasa ekugadzira zvinhu kuti tive nechokwadi chekuti zvinodiwa nemidziyo zvinoenderana nezvinodiwa.