SiC silicon carbidemudziyo unoreva mudziyo wakagadzirwa nesilicon carbide seyakagadzirwa.
Zvinoenderana neakasiyana ekupikisa zvivakwa, yakakamurwa kuita conductive silicon carbide magetsi zvishandiso uyeSemi-insulated silicon carbideRF zvishandiso.
Main mudziyo mafomu uye mashandisirwo esilicon carbide
Mabhenefiti makuru eSiC pamusoroSi zvinhuvari:
SiC ine bhendi gap 3 nguva yeSi, iyo inogona kuderedza kuvuza uye kuwedzera kushivirira kwekushisa.
SiC ine kagumi kusimba kwesimba reSi, inogona kuvandudza density iripo, frequency yekushanda, kumirisana nevoltage uye kuderedza kurasikirwa kwe-on-off, kwakakodzera kune yakakwira voltage application.
SiC ine kaviri electron saturation drift speed yeSi, saka inogona kushanda pamwero wepamusoro.
SiC ine 3 times the thermal conductivity yeSi, zvirinani kupisa kupisa kuita, inogona kutsigira yakakwira simba density uye kuderedza kupisa kunodiwa, zvichiita kuti mudziyo ureruke.
Conductive substrate
Conductive substrate: Nekubvisa kusvibiswa kwakasiyana-siyana mukristaro, kunyanya kusvibiswa kwemazinga asina kudzika, kuti uwane iyo yemukati yakakwira resistivity yekristaro.
Conductivesilicon carbide substrateSiC wafer
Conductive silicon carbide power device iri kuburikidza nekukura kwesilicon carbide epitaxial layer pane conductive substrate, iyo silicon carbide epitaxial sheet inogadziriswazve, kusanganisira kugadzirwa kweSchottky diodes, MOSFET, IGBT, nezvimwewo, inonyanya kushandiswa mumotokari dzemagetsi, photovoltaic simba. chizvarwa, njanji yekufambisa, nzvimbo yedata, kuchaja uye zvimwe zvivakwa. Mabhenefiti ekuita ndeaya anotevera:
Kuwedzeredzwa kwemaitiro ekudzvinyirira. Kusimba kwesimba remagetsi esilicon carbide kunodarika kagumi kune silicon, izvo zvinoita kuti kushivirira kwesilicon carbide kukwire zvakanyanya kupfuura izvo zvakaenzana nesilicon zvishandiso.
Zvirinani kupisa kwepamusoro maitiro. Silicon carbide ine yakakwira yekupisa conductivity kupfuura silicon, iyo inoita kuti mudziyo kupisa dissipation kuve nyore uye muganho wekushanda tembiricha yakakwirira. Kunyanya kupisa kwekushisa kunogona kukonzera kuwedzera kukuru kwesimba remagetsi, uku ichideredza zvinodiwa pane inotonhorera system, kuitira kuti iyo terminal inogona kuve yakareruka uye miniaturized.
Kuderedza simba rekushandisa. ① Silicon carbide mudziyo une yakaderera-kupikisa uye yakaderera-kurasikirwa; (2) Iyo yekudonha ikozvino yesilicon carbide zvishandiso yakaderedzwa zvakanyanya kupfuura iyo yesilicon zvishandiso, nekudaro kuderedza kurasikirwa kwesimba; ③ Iko hakuna ikozvino inoswededza chiitiko mukudzima-kudzima maitiro esilicon carbide zvishandiso, uye kurasikirwa kwekuchinja kwakaderera, izvo zvinovandudza zvakanyanya kuchinjika frequency yeanoshanda maapplication.
Semi-insulated SiC substrate: N doping inoshandiswa kunyatso kudzora resistative yezvigadzirwa zvinoitisa nekugadzirisa hukama hunoenderana pakati penitrogen doping concentration, kukura uye crystal resistivity.
High kuchena semi-insulating substrate zvinhu
Semi-insulated silicon carbon-based RF zvishandiso zvinogadzirwazve nekukura gallium nitride epitaxial layer pane semi-insulated silicon carbide substrate kugadzirira silicon nitride epitaxial sheet, kusanganisira HEMT uye mamwe gallium nitride RF zvishandiso, anonyanya kushandiswa mu5G kutaurirana, kutaurirana kwemotokari, zvikumbiro zvekudzivirira, kutumira data, aerospace.
Saturated electron drift rate yesilicon carbide uye gallium nitride zvinhu ndeye 2.0 uye 2.5 nguva yesilicon zvakateerana, saka mashandisiro ekushanda kwesilicon carbide uye gallium nitride zvishandiso zvakakura kupfuura zvechinyakare zvigadzirwa zvesilicon. Nekudaro, gallium nitride zvinhu zvine dhizaini yekushomeka kwekupisa kupisa, nepo silicon carbide ine yakanaka kupisa kupisa uye kudziya conductivity, iyo inogona kugadzirisa kushomeka kwekupisa kwegallium nitride zvishandiso, saka indasitiri inotora semi-insulated silicon carbide seiyo substrate. , uye gan epitaxial layer inokura pasilicon carbide substrate kugadzira michina yeRF.
Kana pane kukanganisa, bata bvisa
Nguva yekutumira: Jul-16-2024