SiC silicon carbidemudziyo unoreva mudziyo wakagadzirwa nesilicon carbide sechinhu chisina kugadzirwa.
Zvichienderana nehukuru hwakasiyana hwekudzivirira, yakakamurwa kuita zvishandiso zvesimba resilicon carbide zvinofambisa uyesemi-insulated silicon carbideMidziyo yeRF.
Mafomu makuru emidziyo uye mashandisirwo esilicon carbide
Zvakanakira zvikuru zveSiC kupfuuraZvinhu zveSindeidzi:
SiC ine gap rebhandi kakapetwa katatu kupfuura Si, izvo zvinogona kuderedza kubuda kwemvura uye kuwedzera kushivirira tembiricha.
SiC ine simba rekupwanyika kwemagetsi kagumi kupfuura Si, inogona kuvandudza huwandu hwemagetsi aripo, mashandisirwo emagetsi, inotsungirira simba remagetsi uye inoderedza kurasikirwa kwemagetsi panguva yekushanda, uye yakakodzera kushandiswa kwemagetsi akawanda.
SiC ine speed yekudonha kwemaerekitironi kaviri kupfuura Si, saka inogona kushanda nefrequency yakakwira.
SiC ine simba rekupisa rakapetwa katatu kupfuura Si, inokwanisa kudzima kupisa zviri nani, inogona kutsigira simba rakawanda uye inoderedza zvinodiwa zvekudzima kupisa, zvichiita kuti mudziyo uve wakareruka.
Substrate inofambisa mhepo
Substrate inodzora mafambiro emhepo: Nekubvisa tsvina dzakasiyana-siyana mukristaro, kunyanya tsvina isina kudzika, kuti uwane resistivity yepamusoro yekristaro.
Kufambisasilicon carbide substrateSiC wafer
Mudziyo wesimba resilicon carbide unofambiswa nesimbi inofambisa magetsi unobva mukukura kwesilicon carbide epitaxial layer pa conductive substrate, pepa resilicon carbide epitaxial rinogadziriswazve, kusanganisira kugadzirwa kweSchottky diodes, MOSFET, IGBT, nezvimwewo, zvinonyanya kushandiswa mumotokari dzemagetsi, kugadzira simba re photovoltaic, transit yechitima, data center, kuchaja nezvimwe zvivakwa. Mabhenefiti ekushanda ndeaya anotevera:
Hunhu hwekumanikidzwa kwakanyanya. Simba remagetsi resilicon carbide rakaputsika kanopfuura kagumi pane resilicon, izvo zvinoita kuti kuramba kumanikidzwa kwakanyanya kwesilicon carbide kuve kwakanyanya kupfuura kwemidziyo yesilicon yakaenzana.
Hunhu huri nani hwekupisa kwepamusoro. Silicon carbide ine simba rekupisa rakakwirira kupfuura silicon, izvo zvinoita kuti kupisa kwemuchina kuve nyore uye tembiricha yekushanda ikwire. Kuramba tembiricha yakakwira kunogona kukonzera kuwedzera kukuru kwesimba remagetsi, ukuwo zvichideredza zvinodiwa pasystem yekutonhodza, kuitira kuti terminal ive yakareruka uye iite diki.
Kushandiswa kwesimba kwakaderera. ① Mudziyo weSilicon carbide haurambi zvakanyanya uye haurasikirwi zvakanyanya; (2) Kubuda kwesimba kwemidziyo yeSilicon carbide kwakaderera zvakanyanya kupfuura kwemidziyo yeSilicon, nokudaro zvichideredza kurasikirwa kwesimba; ③ Hapana chiitiko chekudzima magetsi panguva yekudzima kwemidziyo yeSilicon carbide, uye kurasikirwa kwekuchinja kwakaderera, izvo zvinovandudza zvakanyanya frequency yekushandiswa kwesimba.
Chikamu cheSiC chakaputirwa zvishoma
Semi-insulated SiC substrate: N doping inoshandiswa kudzora nemazvo resistivity yezvigadzirwa zvinofambisa mhepo nekuenzanisa hukama hunoenderana pakati pehuwandu hwenitrogen doping, kukura kwehuwandu uye crystal resistivity.
Kuchena kwakanyanya kwe semi-insulating substrate zvinhu
Midziyo yeRF ine silicon carbon-based semi-insulated inogadzirwawo nekukura gallium nitride epitaxial layer pa semi-insulated silicon carbide substrate kugadzira silicon nitride epitaxial sheet, kusanganisira HEMT nedzimwe gallium nitride RF zvishandiso, zvinonyanya kushandiswa mukutaurirana kwe5G, kutaurirana kwemotokari, maapplication ekudzivirira, kutumira data, uye ndege.
Mwero wekudonha kwemaerekitironi akazara wesilicon carbide ne gallium nitride zvinhu zvinogadzirwa nesimbi inopetwa ka2.0 ne2.5 pane silicon, saka mashandiro esilicon carbide ne gallium nitride zvishandiso akakura kupfuura esilicon yechinyakare. Zvisinei, gallium nitride zvinhu zvine dambudziko rekusapisa zvakanaka, nepo silicon carbide ine kusapisa kwakanaka uye thermal conductivity, izvo zvinogona kutsiva kusapisa zvakanaka kwe gallium nitride zvishandiso, saka indasitiri inotora semi-insulated silicon carbide se substrate, uye gan epitaxial layer inorimwa pa silicon carbide substrate kugadzira RF zvishandiso.
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Nguva yekutumira: Chikunguru-16-2024