Zvakanakira zveKuburikidza neGirazi (TGV)uye maitiro eThrough Silicon Via(TSV) pamusoro peTGV anonyanya kutaurwa ndeaya:
(1) hunhu hwakanaka hwemagetsi ane mafrequency akakwirira. Girazi chinhu chinodzivirira kupisa, dielectric constant inongori chikamu chimwe chete kubva muzvitatu zvesilicon, uye kurasikirwa kwacho kwakaderera ne2-3 pane silicon, izvo zvinoita kuti kurasikirwa kwesubstrate uye migumisiro yeparasiteti zvideredzwe zvakanyanya uye zvinoita kuti chiratidzo chinotumirwa chive chakasimba;
(2)saizi hombe uye substrate yegirazi yakatetepa kwazvoZviri nyore kuwana. Corning, Asahi naSCHOTT nevamwe vagadziri vemagirazi vanogona kupa girazi repaneru rakakura kwazvo (>2m × 2m) uye rakatetepa kwazvo (<50µm) uye zvinhu zvegirazi zvinochinjika zvakanyanya.
3) Mutengo wakaderera. Batsirwa nekuwana nyore nyore girazi guru rakatetepa kwazvo, uye haridi kuiswa kwezvikamu zvinodzivirira kupisa, mutengo wekugadzira girazi readapter ndiro chikamu chimwe chete muzvina cheplate yeadapter yakavakirwa pasilicon;
4) Maitiro ari nyore. Hapana chikonzero chekuisa jira rinodzivirira kupisa pamusoro pe substrate nemadziro emukati meTGV, uye hapana kutetepa kunodiwa mu adapter plate yakatetepa kwazvo;
(5) Kugadzikana kwakasimba kwemuchina. Kunyangwe ukobvu hwe adapter plate huri pasi pe 100µm, warpage ichiri diki;
(6) Mhando dzakasiyana dzemashandisirwo, tekinoroji iri kubuda kwenguva refu inoshandiswa mumunda wekurongedza wewafer-level, kuti isvike padanho pfupi pakati pewafer-wafer, pitch shoma yekubatanidza inopa nzira itsva yetekinoroji, ine hunhu hwakanaka hwemagetsi, hwekupisa, hwemakanika, muRF chip, masensa eMEMS epamusoro, kubatanidzwa kwesystem yepamusoro uye dzimwe nzvimbo dzine mabhenefiti akasiyana, ndiyo chizvarwa chinotevera che5G, 6G high-frequency chip 3D. Ndiyo imwe yesarudzo dzekutanga dzekurongedza kwe3D kwechizvarwa chinotevera che5G ne6G high-frequency chips.
Maitiro ekuumba eTGV anosanganisira kunyanya kuputira jecha, kudhirowa kwe ultrasonic, kunyorova, kupinza ion yakapfava, kupinza kwe photosensitive, kupinza kwe laser, kupinza kwe depth induced laser, uye kugadzira maburi ekuburitsa zvinhu.
Tsvagiridzo yazvino nemhedzisiro yekuvandudzwa inoratidza kuti tekinoroji iyi inogona kugadzirira kuburikidza nemaburi nemaburi mapofu e5:1 ane chiyero chekudzika kusvika paupamhi che20:1, uye ine chimiro chakanaka. Kucheka kwakadzika kunokonzerwa neLaser, izvo zvinoita kuti pave nekukombama kudiki, ndiyo nzira inonyanya kudzidzwa pari zvino. Sezvakaratidzwa muMufananidzo 1, kune mitswe yakajeka yakatenderedza kucherwa kwelaser kwakajairika, nepo madziro akapoteredza nemadziro ekucheka kwakadzika kunokonzerwa nelaser akachena uye akatsetseka.
Maitiro ekugadzirisaTGVInterposer inoratidzwa muMufananidzo 2. Chirongwa chikuru ndechekuboora maburi pagirazi substrate kutanga, wozoisa barrier layer ne seed layer pamadziro eparutivi nepamusoro. Barrier layer inodzivirira kupararira kweCu kune girazi substrate, ukuwo ichiwedzera kunamira kwezviviri, hongu, mune zvimwe zvidzidzo zvakawanawo kuti barrier layer haisiyo yakakosha. Zvadaro Cu inoiswa ne electroplating, yozoiswa annealed, uye Cu layer inobviswa ne CMP. Pakupedzisira, RDL rewiring layer inogadzirwa ne PVD coating lithography, uye passivation layer inoumbwa mushure mekunge glue yabviswa.
(a) Kugadzirira wafer, (b) kuumbwa kweTGV, (c) double-sided electroplating – kuisa mhangura, (d) annealing uye CMP chemical-mechanical polishing, kubviswa kwe surface copper layer, (e) PVD coating uye lithography, (f) kuiswa kweRDL rewiring layer, (g) degluing uye Cu/Ti etching, (h) kuumbwa kwepassivation layer.
Muchidimbu,girazi rinopinda nepaburi (TGV)Mikana yekushandisa yakakura, uye musika wemuno uripo parizvino uri muchikamu chekukwira, kubva pamidziyo kusvika pakugadzirwa kwezvigadzirwa uye mwero wekukura kwetsvagiridzo nekusimudzira wakakwira kupfuura avhareji yepasi rose.
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Nguva yekutumira: Chikunguru-16-2024