Mawafer eSOI (Silicon-On-Insulator)inomiririra zvinhu zve semiconductor zvine silicon layer yakatetepa kwazvo yakagadzirwa pamusoro pe insulating oxide layer. Chimiro ichi chesandwich chakasiyana chinopa kuvandudzwa kwakakosha kwezvishandiso zve semiconductor.
Kuumbwa kweMaumbirwo:
Rutivi rweChishandiso (Silicon Yepamusoro):
Ukobvu hunotangira pa nanometers dzakawanda kusvika kuma micrometers, zvichishanda sechikamu chinoshanda chekugadzira transistor.
Rutivi rweOkisidhe Rwakavigwa (Bhokisi):
Chidzitiro chinodzivirira silicon dioxide (0.05-15μm ukobvu) chinobvisa chidimbu chemudziyo kubva pasi pevhu nemagetsi.
Chikamu chepasi:
Silikoni yakakura (100-500μm ukobvu) inopa rutsigiro rwemakanika.
Zvichienderana netekinoroji yekugadzirira, nzira huru dzekugadzira mawafer eSOI silicon dzinogona kupatsanurwa seizvi: SIMOX (oxygen injection isolation technology), BESOI (bonding thinning technology), uye Smart Cut (intelligent stripping technology).
SIMOX (Oxygen injection isolation technology) inzira inosanganisira kuisa maion eoxygen ane simba rakawanda muma silicon wafers kuti pave ne silicon dioxide yakapinzwa mu layer, iyo inozoiswa mu annealing inodziya zvakanyanya kugadzirisa zvikanganiso zve lattice. Pakati payo i direct ion oxygen injection kuti pave ne oxygen yakavigwa mu layer.
BESOI (Bonding Thinning technology) inosanganisira kubatanidza mawafer maviri esilicon wobva waita kuti rimwe rive rakatetepa kuburikidza nekukuya nekugadzira makemikari kuti pave nechimiro cheSOI. Chinhu chikuru chiri mukubatanidza nekuita kuti rive rakatetepa.
Smart Cut (Intelligent Exfoliation technology) inoumba exfoliation layer kuburikidza ne hydrogen ion injection. Mushure mekusungana, kurapwa kwekupisa kunoitwa kuti silicon wafer ibude pamwe chete ne hydrogen ion layer, zvichiita silicon layer yakatetepa kwazvo. Chikamu chikuru ndeche hydrogen injection stripping.
Parizvino, kune imwe tekinoroji inozivikanwa seSIMBOND (oxygen injection bonding technology), iyo yakagadzirwa neXinao. Kutaura zvazviri, inzira inosanganisa oxygen injection isolation uye bonding technologies. Munzira iyi yehunyanzvi, oxygen inopinzwa inoshandiswa se thinning barrier layer, uye oxygen layer chaiyo yakavigwa i thermal oxidation layer. Nokudaro, inovandudza panguva imwe chete parameters dzakadai sekufanana kwe top silicon uye kunaka kwe oxygen layer yakavigwa.
Mawafer esilicon eSOI anogadzirwa nenzira dzakasiyana dzehunyanzvi ane maparamita akasiyana ekushanda uye akakodzera mamiriro akasiyana ekushandiswa.
Inotevera tafura pfupiso yezvakanakira zveSOI silicon wafers pakushanda zvakanaka, pamwe chete nehunyanzvi hwadzo uye mamiriro chaiwo ekushandiswa. Kana tichienzanisa nesilicon yemazuva ano, SOI ine zvakanakira zvikuru mukumhanya uye kushandiswa kwesimba. (PS: Kushanda kwe22nm FD-SOI kwakafanana neFinFET, uye mutengo wacho wakaderera ne30%.)
| Kubatsira Kwekuita | Nheyo yeUnyanzvi | Kuratidzwa Kwacho Chaiko | Maitiro Akajairika Ekushandisa |
| Kukwanisa Kushoma Kweparasitiki | Chivharo chekudzivirira kupinza (BOX) chinovhara chaji pakati pemudziyo ne substrate | Kumhanya kwekuchinja kwakawedzera ne15%-30%, kushandiswa kwesimba kwakaderera ne20%-50% | 5G RF, machipisi ekutaurirana akakwira-frequency |
| Kuderedzwa Kwekudonha Kwemvura | Chidzitiro chekudzivirira kudonha kwemvura chinodzivisa nzira dzemagetsi dzinobuda | Kubuda kwemvura kwakaderera ne>90%, hupenyu hwebhatiri hwakawedzerwa | Zvishandiso zveIoT, Zvemagetsi Zvinopfekwa |
| Kuomarara Kwemwaranzi Kwakawedzerwa | Chidziviriro chekudzivirira kuunganidzwa kwechaji inokonzerwa nemwaranzi | Kushivirira kwemwaranzi kwakawedzera katatu kusvika kashanu, zvichideredza kukanganiswa kwezviitiko kamwe chete | Zvikepe zvemuchadenga, Midziyo yeindasitiri yeNyukireya |
| Kudzora Mhedzisiro Yenzira Pfupi | Rutivi rwakatetepa rwesilicon runoderedza kukanganiswa kwemagetsi pakati pemvura inoyerera uye nzvimbo inobuda | Kugadzikana kwemagetsi emuganho kwakavandudzwa, kutsetseka kwemuganho wepasi kwakagadziridzwa | Machipisi epfungwa epamusoro e-node (<14nm) |
| Kugadziriswa kweKupisa Kwakavandudzwa | Chidzitiro chekudzivirira chinoderedza kubatana kwekupisa kwemhepo | Kuunganidzwa kwekupisa kushoma ne30%, tembiricha yekushanda yakaderera ne15-25°C | MaIC e3D, Zvemagetsi zvemotokari |
| Kugadzirisa Kuwanda Kwenguva Dzese | Kuderedza kugona kwezvipembenene uye kufamba kwakawedzerwa kwemutakuri | Kunonoka kwakaderera kwe20%, kunotsigira kugadzirisa zviratidzo zve>30GHz | Kutaurirana kwemmWave, machipisi eSatellite comm |
| Kuwedzera Kuchinjika Kwemagadzirirwo | Hapana mushonga wekubatsira vanhu kuti vasashandise mishonga yemusana, unotsigira kutsvedza kwemusana | Matanho ekuita mashoma ne13%-20%, huwandu hwekubatanidzwa hwakawedzera ne40% | MaIC ezviratidzo zvakasiyana-siyana, MaSensor |
| Kusadzivirira Kubatwa Nechirwere Chekuvharwa | Chidzitiro chekudzivirira chinobvisa zvipembenene zvinokanganisa nharaunda dzePN | Chiyero chemagetsi cheLatch-up chakawedzera kusvika >100mA | Midziyo yemagetsi ine simba guru |
Muchidimbu, mabhenefiti makuru eSOI ndeekuti: inomhanya nekukurumidza uye inoshandisa simba zvishoma.
Nekuda kwemaitiro aya eSOI, ine mashandisirwo akawanda munzvimbo dzinoda mashandiro akanaka kwazvo efrequency uye mashandiro esimba.
Sezvakaratidzwa pazasi, zvichibva pahuwandu hweminda yekushandisa inoenderana neSOI, zvinogona kuonekwa kuti RF nemidziyo yemagetsi ndizvo zvinonyanya kukosha mumusika weSOI.
| Munda weKunyorera | Mugove weMusika |
| RF-SOI (Mafambiro eRadio) | 45% |
| Simba reSOI | 30% |
| FD-SOI (Yakapera Zvizere) | 15% |
| Optical SOI | 8% |
| Sensor SOI | 2% |
Nekukura kuri kuita misika yakaita sekutaurirana nefoni uye kutyaira wega, mawafer eSOI silicon anotarisirwawo kuchengetedza mwero wekukura.
XKH, semugadziri anotungamira muhunyanzvi hweSilicon-On-Insulator (SOI) wafer, inopa mhinduro dzakakwana dzeSOI kubva paR&D kusvika pakugadzirwa kwehuwandu uchishandisa maitiro ekugadzira anotungamira muindasitiri. Portfolio yedu yakazara inosanganisira 200mm/300mm SOI wafers inosanganisa RF-SOI, Power-SOI uye FD-SOI variants, ine kudzora kwakasimba kwemhando inovimbisa kushanda kwakasimba (kufanana kweukobvu mukati me ±1.5%). Tinopa mhinduro dzakagadziriswa dzine ukobvu hweburied oxide (BOX) layer kubva pa50nm kusvika 1.5μm uye dzakasiyana-siyana resistivity specifications kuti dzisangane nezvinodiwa chaizvo. Tichishandisa makore gumi nemashanu ehunyanzvi hwehunyanzvi uye chain yakasimba yepasi rose yekugovera, tinopa zvakavimbika zvinhu zveSOI substrate zvemhando yepamusoro kune vagadziri vema semiconductor vepamusoro pasi rese, zvichigonesa hunyanzvi hwechip mukutaurirana kwe5G, zvemagetsi emotokari, uye maapplication ehungwaru hwekugadzira.
XKH'mawafer eSOI:
Nguva yekutumira: Kubvumbi-24-2025