SOI (Silicon-On-Insulator) zvimeduinomiririra yakasarudzika semiconductor zvinhu ine Ultra-yakatetepa silicon layer yakaumbwa pamusoro peinodzivirira oxide layer. Ichi chakasarudzika sandwich chimiro chinopa kwakakosha mashandiro ekusimudzira kune semiconductor zvishandiso.
Structural Composition:
Device Layer (Pamusoro Silicon):
Ukobvu kubva kune akati wandei nanometers kusvika ku micrometers, kushanda seyainoshanda layer yekugadzira transistor.
Yakavigwa Oxide Layer (BOX):
Siricon dioxide insulating layer (0.05-15μm gobvu) iyo inoparadzanisa nemagetsi dhizaini kubva kune substrate.
Base Substrate:
Bulk silicon (100-500μm gobvu) inopa tsigiro yemuchina.
Zvinoenderana nehunyanzvi hwekugadzirira tekinoroji, nzira dzekutanga dzeSOI silicon wafers dzinogona kuiswa se: SIMOX (oxygen jekiseni isolation tekinoroji), BESOI (bonding thinning tekinoroji), uye Smart Cut (yakangwara inobvisa tekinoroji).
SIMOX (Oxygen jekiseni isolation tekinoroji) inzira inosanganisira kubaya maioni eokisijeni ane simba guru mumasikirini esilicon kuti agadzire silicon dioxide yakamisikidzwa layer, iyo inozoiswa pasi pekupisa-tembiricha kugadzirisa kukanganisa kwelattice. Mwongo wakananga ion okisijeni jekiseni kuumba akavigwa layer okisijeni.
BESOI (Bonding Thinning tekinoroji) inosanganisira kubatanidza maviri masilicon wafers uyezve kutetepa imwe yacho kuburikidza nemakanika kugaya uye kemikari etching kugadzira iyo SOI chimiro. Chinhu chikuru chiri mukubatana uye kuonda.
Smart Cheka (Intelligent Exfoliation tekinoroji) inoumba exfoliation layer kuburikidza nejekiseni rehydrogen ion. Mushure mekubatana, kurapwa kwekupisa kunoitwa kuburitsa iyo silicon wafer pamwe neiyo hydrogen ion layer, ichigadzira iyo yekupedzisira-yakaonda silicon layer. Iyo yakakosha ndeye hydrogen jekiseni kubvisa.
Parizvino, kune imwe tekinoroji inozivikanwa se SIMBOND (oxygen jekiseni bonding tekinoroji), iyo yakagadziridzwa naXinao. Muchokwadi, inzira inosanganisa okisijeni jekiseni yekuzviparadzanisa uye yekubatanidza matekinoroji. Munzira iyi yehunyanzvi, iyo jekiseni yeokisijeni inoshandiswa seyakatetepa chipingamupinyi, uye chaiyo yakavigwa okisijeni layer ndeye inopisa oxidation layer. Naizvozvo, panguva imwe chete inonatsiridza ma parameter akadai sekufanana kwepamusoro silicon uye kunaka kwekuvigwa okisijeni layer.
SOI silicon wafers anogadzirwa nenzira dzakasiyana dzehunyanzvi ane akasiyana ma paramita ekuita uye akakodzera akasiyana ekushandisa mamiriro.
Inotevera itafura yepfupiso yezvakanakira mashandiro eSOI silicon wafers, akasanganiswa neavo ehunyanzvi maficha uye chaiwo maficha ekushandisa. Kuenzaniswa neyechinyakare yakawanda silicon, SOI ine zvakakosha zvakanakira muyero yekumhanya uye mashandisiro emagetsi. (PS: Kuita kwe22nm FD-SOI kuri pedyo neFinFET, uye mutengo unoderedzwa ne30%.)
| Performance Advantage | Technical Principle | Specific Manifestation | Mamiriro Ekushandisa Akajairika |
| Low Parasitic Capacitance | Insulating layer (BOX) inovhara kuchaja kubatanidzwa pakati pemudziyo uye substrate | Kuchinja kwekukurumidza kwakawedzera ne15% -30%, simba rekushandisa rakaderedzwa ne20% -50% | 5G RF, High-frequency communication chips |
| Yakaderedzwa Leakage Current | Insulating layer inodzvinyirira kuvuza nzira dzazvino | Leakage current yakaderedzwa ne>90%, yakawedzerwa hupenyu hwebhatiri | IoT zvishandiso, Wearable zvemagetsi |
| Enhanced Radiation Hardness | Insulating layer inovhara kuunganidzwa kwemwaranzi-induced charge | Radiation kushivirira kwakagadziridzwa 3-5x, kuderedzwa kwechiitiko chimwe chete kugumbuka | Spacecraft, Nuclear industry equipment |
| Short-Channel Effect Control | Yakaonda silicon layer inoderedza kupindira kwemagetsi munda pakati pedhiraini uye sosi | Yakavandudzwa pachikumbaridzo voltage kugadzikana, yakagadziridzwa subthreshold kutsetseka | Yepamberi node logic chips (<14nm) |
| Yakavandudzwa Thermal Management | Insulating layer inoderedza thermal conduction coupling | 30% zvishoma kupisa kuunganidza, 15-25 ° C yakaderera tembiricha yekushandisa | 3D ICs, Zvemagetsi zvemotokari |
| High-Frequency Optimization | Yakaderedzwa parasitic capacitance uye inosimudzira mutakuri wekufamba | 20% yakaderera kunonoka, inotsigira> 30GHz chiratidzo chekugadzirisa | mmWave kutaurirana, Satellite comm chips |
| Kuwedzera Dhizaini Flexibility | Hapana tsime doping inodiwa, inotsigira kurerekera kumashure | 13% -20% mashoma maitiro matanho, 40% yepamusoro yekubatanidza density | Yakasanganiswa-chiratidzo ICs, Sensors |
| Latch-up Immunity | Insulating layer inoparadzanisa parasitic PN junctions | Latch-up ikozvino chikumbaridzo chakawedzera kusvika> 100mA | High-voltage magetsi midziyo |
Kupfupisa, izvo zvakakosha zveSOI ndezvekuti: inomhanya nekukurumidza uye inowedzera simba-inoshanda.
Nekuda kweaya maitiro ekuita eSOI, ine yakafara maapplication muminda inoda yakanakisa frequency kuita uye simba rekushandisa kuita.
Sezvinoratidzwa pazasi, zvichibva pachikamu cheminda yekushandisa inoenderana neSOI, zvinogona kuoneka kuti RF nemagetsi zvishandiso zvinoverengera ruzhinji rwemusika weSOI.
| Munda Wekushandisa | Market Share |
| RF-SOI (Radio Frequency) | 45% |
| Simba SOI | 30% |
| FD-SOI (Yakaperera) | 15% |
| Optical SOI | 8% |
| Sensor SOI | 2% |
Nekukura kwemisika senge nharembozha yekutaurirana uye kuzvitonga kutyaira, SOI silicon wafers inotarisirwawo kuchengetedza imwe chiyero chekukura.
XKH, semutungamiri anotungamira muSilicon-On-Insulator (SOI) wafer tekinoroji, inopa yakakwana mhinduro dzeSOI kubva kuR&D kusvika kuhuwandu hwekugadzira uchishandisa maindasitiri anotungamira ekugadzira maitiro. Yedu yakazara portfolio inosanganisira 200mm/300mm SOI mawafers anotora RF-SOI, Power-SOI uye FD-SOI akasiyana, ane kuomarara kwemhando yekudzora inova nechokwadi chekuita kwakasiyana kuenderana (ukobvu hwakafanana mukati ± 1.5%). Isu tinopa zvigadziriso zvakagadziridzwa neakavigwa oxide (BOX) layer ukobvu kubva pa50nm kusvika 1.5μm uye akasiyana resistivity mataurirwo kuti asangane nezvinodiwa chaizvo. Kushandisa makore gumi neshanu ehunyanzvi hwehunyanzvi uye hwakasimba hwepasirese hwekugovera cheni, isu tinopa akavimbika emhando yepamusoro SOI substrate zvigadzirwa kune yepamusoro-tier semiconductor vagadziri pasi rese, ichigonesa yekucheka-kumucheto chip innovation mu5G kutaurirana, mota dzemagetsi, uye hungwaru hwekushandisa.
XKH's SOI zvimedu:
Nguva yekutumira: Kubvumbi-24-2025