Chidimbu cheSiC wafer
Zvidimbu zvesilicon carbide (SiC)zvave nzvimbo inosarudzwa yemagetsi ane simba guru, mafrequency akawanda, uye tembiricha yepamusoro muzvikamu zvemotokari, simba rinodzokororwa, uye makambani emuchadenga. Portfolio yedu inosanganisira ma polytypes akakosha uye zvirongwa zve doping—nitrogen-doped 4H (4H-N), high-purity semi-insulating (HPSI), nitrogen-doped 3C (3C-N), uye p-type 4H/6H (4H/6H-P)—inopihwa muzvikamu zvitatu zvemhando yepamusoro: PRIME (full polished, device-grade substrates), DUMMY (lapped kana unpolished for process trials), uye RESEARCH (custom epi layers uye doping profiles yeR&D). Wafer diameters inosvika 2″, 4″, 6″, 8″, uye 12″ kuti ikwane zvishandiso zvekare uye zvigadzirwa zvepamusoro. Isu tinopawo monocrystalline boules uye makristaro embeu akatarisana zvakanaka kutsigira kukura kwekristaro mumba.
Mawafer edu e4H-N ane huwandu hwecarrier kubva pa1×10¹⁶ kusvika 1×10¹⁹ cm⁻³ uye hunhu hwe resistivity hwe0.01–10 Ω·cm, zvichipa kufamba kwakanaka kwemaerekitironi uye nzvimbo dzekupwanya magetsi pamusoro pe2 MV/cm—zvakanakira maSchottky diodes, MOSFETs, uye JFETs. HPSI substrates dzinopfuura 1×10¹² Ω·cm resistivity ine micropipe densities iri pasi pe0.1 cm⁻², zvichiita kuti pave nekudonha kushoma kweRF uye microwave devices. Cubic 3C-N, inowanikwa mu2″ uye 4″ formats, inobvumira heteroepitaxy pasilicon uye inotsigira maapplication matsva ephotonic neMEMS. Mawafer eP-type 4H/6H-P, akaiswa aruminiyamu kusvika 1×10¹⁶–5×10¹⁸ cm⁻³, anobatsira magadzirirwo emidziyo anoenderana.
Mawafer eSiC, PRIME anogadziriswa nemakemikari kusvika <0.2 nm RMS surface roughness, kusiyana kweukobvu pasi pe3 µm, uye bow <10 µm. DUMMY substrates dzinokurumidza bvunzo dzekuunganidza nekurongedza, nepo mawafer eRESEARCH aine ukobvu hwe epi-layer hwe2–30 µm uye doping yakagadzirwa. Zvigadzirwa zvese zvinosimbiswa neX-ray diffraction (rocking curve <30 arcsec) uye Raman spectroscopy, nekuyedzwa kwemagetsi—Hall measurements, C–V profilering, uye micropipe scanning—zvichivimbisa kuti JEDEC neSEMI zvinoenderana.
Mabhora ane dhayamita inosvika 150 mm anorimwa kuburikidza nePVT neCVD ane dislocation densities iri pasi pe 1×10³ cm⁻² uye micropipe count shoma. Makristu embeu anochekwa mukati me 0.1° ye c-axis kuti ave nechokwadi chekukura zvakare uye goho guru rekucheka.
Nekubatanidza mhando dzakasiyana dzema polytypes, mhando dzedoping, mhando dzemhando yepamusoro, saizi dzeSiC wafer, uye kugadzirwa kwe boule ne seed-crystal mukati meimba, puratifomu yedu yeSiC substrate inoita kuti zvinhu zvienderane uye inokurumidza kugadzirwa kwemidziyo yemotokari dzemagetsi, ma grid akangwara, uye mashandisirwo enzvimbo dzakaoma.
Chidimbu cheSiC wafer
Zvidimbu zvesilicon carbide (SiC)zvave chikamu cheSiC chinosarudzwa chemagetsi ane simba guru, mafrequency akawanda, uye tembiricha yepamusoro muzvikamu zvemotokari, simba rinodzokororwa, uye makambani emuchadenga. Portfolio yedu inosanganisira ma polytypes akakosha uye zvirongwa zvedoping—nitrogen-doped 4H (4H-N), high-purity semi-insulating (HPSI), nitrogen-doped 3C (3C-N), uye p-type 4H/6H (4H/6H-P)—inopihwa mumhando nhatu dzemhando yepamusoro: SiC waferPRIME (zvigadziko zvakakwenenzverwa zvakakwana, zvemhando yepamusoro yemidziyo), DUMMY (yakakwenenzverwa kana isina kukwenenzverwa kuti ishandiswe), uye RESEARCH (ma epi layers akagadzirwa nemaoko uye ma doping profiles eR&D). Madhayamita eSiC Wafer anotenderera 2″, 4″, 6″, 8″, uye 12″ kuti akwane zvishandiso zvekare uye zvigadzirwa zvepamusoro. Isu tinopawo monocrystalline boules uye makristaro embeu akanyatsorongeka kuti atsigire kukura kwekristaro mumba.
Mawafer edu e4H-N SiC ane huwandu hwecarrier kubva pa1×10¹⁶ kusvika 1×10¹⁹ cm⁻³ uye hunhu hwe0.01–10 Ω·cm, zvichipa kufamba kwakanaka kwemaerekitironi uye nzvimbo dzekupwanya magetsi pamusoro pe2 MV/cm—zvakanakira maSchottky diodes, MOSFETs, uye JFETs. Ma substrates eHPSI anopfuura 1×10¹² Ω·cm resistivity ane hunhu hwe micropipe pasi pe0.1 cm⁻², zvichiita kuti pave nekudonha kushoma kweRF uye michina ye microwave. Cubic 3C-N, inowanikwa mumafomu e2″ ne4″, inobvumira heteroepitaxy pasilicon uye inotsigira maapplication matsva e photonic neMEMS. Mawafer eSiC wafer P-type 4H/6H-P, akaiswa aruminiyamu kusvika 1×10¹⁶–5×10¹⁸ cm⁻³, anobatsira magadzirirwo emidziyo anoenderana.
Mawafer eSiC wafer PRIME anogadziriswa nemakemikari kusvika <0.2 nm RMS surface roughness, kusiyana kweukobvu pasi pe3 µm, uye bow <10 µm. DUMMY substrates dzinokurumidza bvunzo dzekuunganidza nekurongedza, nepo mawafer eRESEARCH aine ukobvu hwe epi-layer hwe2–30 µm uye doping yakagadzirwa. Zvigadzirwa zvese zvinosimbiswa neX-ray diffraction (rocking curve <30 arcsec) uye Raman spectroscopy, nekuyedzwa kwemagetsi—Hall measurements, C–V profilering, uye micropipe scanning—zvichivimbisa kuti JEDEC neSEMI zvinoenderana.
Mabhora ane dhayamita inosvika 150 mm anorimwa kuburikidza nePVT neCVD ane dislocation densities iri pasi pe 1×10³ cm⁻² uye micropipe count shoma. Makristu embeu anochekwa mukati me 0.1° ye c-axis kuti ave nechokwadi chekukura zvakare uye goho guru rekucheka.
Nekubatanidza mhando dzakasiyana dzema polytypes, mhando dzedoping, mhando dzemhando yepamusoro, saizi dzeSiC wafer, uye kugadzirwa kwe boule ne seed-crystal mukati meimba, puratifomu yedu yeSiC substrate inoita kuti zvinhu zvienderane uye inokurumidza kugadzirwa kwemidziyo yemotokari dzemagetsi, ma grid akangwara, uye mashandisirwo enzvimbo dzakaoma.
Mufananidzo weSiC wafer
Pepa re data reSiC wafer remhando ye6inch 4H-N
| Pepa reruzivo rwemawafer eSiC e6inch | ||||
| Paramita | Sub-Parameter | Giredhi Z | Giredhi reP | Giredhi D |
| Dhayamita | 149.5–150.0 mm | 149.5–150.0 mm | 149.5–150.0 mm | |
| Ukobvu | 4H‑N | 350 µm ± 15 µm | 350 µm ± 25 µm | 350 µm ± 25 µm |
| Ukobvu | 4H‑SI | 500 µm ± 15 µm | 500 µm ± 25 µm | 500 µm ± 25 µm |
| Kudzidziswa kweWafer | Kurerekera kure: 4.0° kuenda ku <11-20> ±0.5° (4H-N); Kurerekera kure: <0001> ±0.5° (4H-SI) | Kurerekera kure: 4.0° kuenda ku <11-20> ±0.5° (4H-N); Kurerekera kure: <0001> ±0.5° (4H-SI) | Kurerekera kure: 4.0° kuenda ku <11-20> ±0.5° (4H-N); Kurerekera kure: <0001> ±0.5° (4H-SI) | |
| Kuwanda kwepombi dze micropombi | 4H‑N | ≤ 0.2 cm⁻² | ≤ 2 cm⁻² | ≤ 15 cm⁻² |
| Kuwanda kwepombi dze micropombi | 4H‑SI | ≤ 1 cm⁻² | ≤ 5 cm⁻² | ≤ 15 cm⁻² |
| Kuramba | 4H‑N | 0.015–0.024 Ω·cm | 0.015–0.028 Ω·cm | 0.015–0.028 Ω·cm |
| Kuramba | 4H‑SI | ≥ 1×10¹⁰ Ω·cm | ≥ 1×10⁵ Ω·cm | |
| Kutungamira Kwakatsetseka Kwepakutanga | [10-10] ± 5.0° | [10-10] ± 5.0° | [10-10] ± 5.0° | |
| Hurefu Hwepamusoro-soro | 4H‑N | 47.5 mm ± 2.0 mm | ||
| Hurefu Hwepamusoro-soro | 4H‑SI | Notch | ||
| Kusabatanidzwa kweMupendero | 3 mm | |||
| Yakakombama/LTV/TTV/Uta | ≤2.5 µm / ≤6 µm / ≤25 µm / ≤35 µm | ≤5 µm / ≤15 µm / ≤40 µm / ≤60 µm | ||
| Kuomarara | ChiPolish | Ra ≤ 1 nm | ||
| Kuomarara | CMP | Ra ≤ 0.2 nm | Ra ≤ 0.5 nm | |
| Mitsemhere yemucheto | Hapana | Kureba kwakawedzerwa ≤ 20 mm, imwe chete ≤ 2 mm | ||
| Maplate eHex | Nzvimbo yakaunganidzwa ≤ 0.05% | Nzvimbo yakaunganidzwa ≤ 0.1% | Nzvimbo yakaunganidzwa ≤ 1% | |
| Nzvimbo dzePolytype | Hapana | Nzvimbo yakaunganidzwa ≤ 3% | Nzvimbo yakaunganidzwa ≤ 3% | |
| Kubatanidzwa kweCarbon | Nzvimbo yakaunganidzwa ≤ 0.05% | Nzvimbo yakaunganidzwa ≤ 3% | ||
| Kukwenya Pamusoro | Hapana | Kureba kwakawedzerwa ≤ 1 × dhayamita yewafer | ||
| Machipisi emucheto | Hapana chinotenderwa ≥ 0.2 mm upamhi uye kudzika | Kusvika machipisi manomwe, ≤ 1 mm imwe neimwe | ||
| TSD (Kubviswa kweThreading Screw) | ≤ 500 cm⁻² | Hazvina kukwana | ||
| BPD (Base Plane Dislocation) | ≤ 1000 cm⁻² | Hazvina kukwana | ||
| Kusvibiswa Kwepamusoro | Hapana | |||
| Kurongedza | Kaseti ine wafer yakawanda kana mudziyo mumwe chete wewafer | Kaseti ine wafer yakawanda kana mudziyo mumwe chete wewafer | Kaseti ine wafer yakawanda kana mudziyo mumwe chete wewafer | |
Pepa re data reSiC wafer re4inch 4H-N
| Pepa redata reSiC wafer re4inch | |||
| Paramita | Kugadzirwa kweMPD kusina | Giredhi Rekugadzirwa Rakajairika (Giredhi reP) | Giredhi reDummy (Giredhi D) |
| Dhayamita | 99.5 mm–100.0 mm | ||
| Ukobvu (4H-N) | 350 µm±15 µm | 350 µm±25 µm | |
| Ukobvu (4H-Si) | 500 µm±15 µm | 500 µm±25 µm | |
| Kudzidziswa kweWafer | Kudzima axis: 4.0° kuenda ku <1120> ±0.5° ye 4H-N; Kudzima axis: <0001> ±0.5° ye 4H-Si | ||
| Kuwanda kweMapombi eMicropombi (4H-N) | ≤0.2 cm⁻² | ≤2 cm⁻² | ≤15 cm⁻² |
| Kuwanda kwepombi dze micropombi (4H-Si) | ≤1 cm⁻² | ≤5 cm⁻² | ≤15 cm⁻² |
| Kuramba (4H-N) | 0.015–0.024 Ω·cm | 0.015–0.028 Ω·cm | |
| Kuramba (4H-Si) | ≥1E10 Ω·cm | ≥1E5 Ω·cm | |
| Kutungamira Kwakatsetseka Kwepakutanga | [10-10] ±5.0° | ||
| Hurefu Hwepamusoro-soro | 32.5 mm ±2.0 mm | ||
| Kureba Kwechipiri Kwakatsetseka | 18.0 mm ±2.0 mm | ||
| Kudzidziswa kwechipiri kwakadzikama | Silicon yakatarisana mudenga: 90° CW kubva paprime flat ±5.0° | ||
| Kusabatanidzwa kweMupendero | 3 mm | ||
| LTV/TTV/Warp yeUta | ≤2.5 µm/≤5 µm/≤15 µm/≤30 µm | ≤10 µm/≤15 µm/≤25 µm/≤40 µm | |
| Kuomarara | Polish Ra ≤1 nm; CMP Ra ≤0.2 nm | Ra ≤0.5 nm | |
| Mipata yemucheto nechiedza chakasimba | Hapana | Hapana | Kureba kwakaunganidzwa ≤10 mm; kureba kumwe chete ≤2 mm |
| Hex Plates Nechiedza Chakanyanya Kusimba | Nzvimbo yakaunganidzwa ≤0.05% | Nzvimbo yakaunganidzwa ≤0.05% | Nzvimbo yakaunganidzwa ≤0.1% |
| Nzvimbo dzePolytype Nechiedza Chakanyanya Kusimba | Hapana | Nzvimbo yakaunganidzwa ≤3% | |
| Kubatanidzwa kweKabhoni Inoonekwa | Nzvimbo yakaunganidzwa ≤0.05% | Nzvimbo yakaunganidzwa ≤3% | |
| Kukwenya Kwepamusoro peSilicon Nechiedza Chakanyanya Kusimba | Hapana | Kureba kwakawedzerwa ≤1 dhayamita yewafer | |
| Edge Chips Nechiedza Chakanyanya Kusimba | Hapana chinobvumidzwa ≥0.2 mm upamhi uye kudzika | 5 inobvumirwa, ≤1 mm imwe neimwe | |
| Kusvibiswa kweSilicon pamusoro neHigh Intensity Light | Hapana | ||
| Kubviswa kwe threading screw | ≤500 cm⁻² | Hazvina kukwana | |
| Kurongedza | Kaseti ine wafer yakawanda kana mudziyo mumwe chete wewafer | Kaseti ine wafer yakawanda kana mudziyo mumwe chete wewafer | Kaseti ine wafer yakawanda kana mudziyo mumwe chete wewafer |
Pepa re data remhando ye4inch HPSI SiC wafer
| Pepa re data remhando ye4inch HPSI SiC wafer | |||
| Paramita | Giredhi reKugadzirwa kweMPD Zero (Giredhi Z) | Giredhi Rekugadzirwa Rakajairika (Giredhi reP) | Giredhi reDummy (Giredhi D) |
| Dhayamita | 99.5–100.0 mm | ||
| Ukobvu (4H-Si) | 500 µm ±20 µm | 500 µm ±25 µm | |
| Kudzidziswa kweWafer | Kudzima axis: 4.0° kuenda ku <11-20> ±0.5° ye 4H-N; Kudzima axis: <0001> ±0.5° ye 4H-Si | ||
| Kuwanda kwepombi dze micropombi (4H-Si) | ≤1 cm⁻² | ≤5 cm⁻² | ≤15 cm⁻² |
| Kuramba (4H-Si) | ≥1E9 Ω·cm | ≥1E5 Ω·cm | |
| Kutungamira Kwakatsetseka Kwepakutanga | (10-10) ±5.0° | ||
| Hurefu Hwepamusoro-soro | 32.5 mm ±2.0 mm | ||
| Kureba Kwechipiri Kwakatsetseka | 18.0 mm ±2.0 mm | ||
| Kudzidziswa kwechipiri kwakadzikama | Silicon yakatarisana mudenga: 90° CW kubva paprime flat ±5.0° | ||
| Kusabatanidzwa kweMupendero | 3 mm | ||
| LTV/TTV/Warp yeUta | ≤3 µm/≤5 µm/≤15 µm/≤30 µm | ≤10 µm/≤15 µm/≤25 µm/≤40 µm | |
| Kukombama (C chiso) | ChiPolish | Ra ≤1 nm | |
| Kukombama (Si face) | CMP | Ra ≤0.2 nm | Ra ≤0.5 nm |
| Mipata yemucheto nechiedza chakasimba | Hapana | Kureba kwakaunganidzwa ≤10 mm; kureba kumwe chete ≤2 mm | |
| Hex Plates Nechiedza Chakanyanya Kusimba | Nzvimbo yakaunganidzwa ≤0.05% | Nzvimbo yakaunganidzwa ≤0.05% | Nzvimbo yakaunganidzwa ≤0.1% |
| Nzvimbo dzePolytype Nechiedza Chakanyanya Kusimba | Hapana | Nzvimbo yakaunganidzwa ≤3% | |
| Kubatanidzwa kweKabhoni Inoonekwa | Nzvimbo yakaunganidzwa ≤0.05% | Nzvimbo yakaunganidzwa ≤3% | |
| Kukwenya Kwepamusoro peSilicon Nechiedza Chakanyanya Kusimba | Hapana | Kureba kwakawedzerwa ≤1 dhayamita yewafer | |
| Edge Chips Nechiedza Chakanyanya Kusimba | Hapana chinobvumidzwa ≥0.2 mm upamhi uye kudzika | 5 inobvumirwa, ≤1 mm imwe neimwe | |
| Kusvibiswa kweSilicon pamusoro neHigh Intensity Light | Hapana | Hapana | |
| Kubviswa kweSkuruu Yekutambisa Threading | ≤500 cm⁻² | Hazvina kukwana | |
| Kurongedza | Kaseti ine wafer yakawanda kana mudziyo mumwe chete wewafer | ||
Kushandiswa kweSiC wafer
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SiC Wafer Power Modules yeEV Inverters
MaMOSFET nemadiode akavakirwa paSiC wafer substrates emhando yepamusoro anopa kurasikirwa kwakanyanya kwekuchinja. Nekushandisa tekinoroji yeSiC wafer, mamodule aya emagetsi anoshanda pamagetsi netembiricha yakakwira, zvichiita kuti ma inverter ekubata ashande zvakanaka. Kubatanidza maSiC wafer dies muzvikamu zvemagetsi kunoderedza zvinodiwa zvekutonhodza uye mafambiro etsoka, zvichiratidza kugona kweSiC wafer innovation. -
Midziyo yeRF ne5G inofambiswa neSiC Wafer
MaRF amplifiers nemaswichi akagadzirwa pamapuratifomu eSiC wafer ane semi-insulating anoratidza kupisa kwakanyanya uye voltage yekupwanyika. SiC wafer substrate inoderedza kurasikirwa kwe dielectric pama frequency eGHz, nepo simba reSiC wafer richibvumira kushanda kwakasimba pasi pesimba rakakwirira, uye tembiricha yepamusoro—zvichiita kuti SiC wafer ive substrate inosarudzwa ye 5G base stations ne radar systems dzechizvarwa chinotevera. -
Zvishandiso zveOptoelectronic & LED kubva kuSiC Wafer
Ma LED ebhuruu neUV anokura paSiC wafer substrates anobatsirwa nekufananidza lattice zvakanaka uye kupisa. Kushandisa C-face SiC wafer yakaporishwa kunoita kuti pave nema layers akafanana epitaxial, nepo kuomarara kweSiC wafer kuchigonesa kutetepa kwewafer uye kurongedza kwakavimbika kwemidziyo. Izvi zvinoita kuti SiC wafer ive nzvimbo inoshandiswa ne LED ine simba guru uye inogara kwenguva refu.
Mibvunzo neMhinduro zveSiC wafer
1. Mubvunzo: Mawafer eSiC anogadzirwa sei?
A:
Mawafer eSiC anogadzirwaMatanho Akadzama
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Mawafer eSiCKugadzirira Zvinhu Zvisina Kugadzirwa
- Shandisa upfu hweSiC hwemhando ye≥5N (tsvina ≤1 ppm).
- Sefa wobika kare kuti ubvise zvinhu zvakasara zvekabhoni kana nitrogen.
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SiCKugadzirira Mbeu yeKrista
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Tora chidimbu chekristaro imwe chete ye4H-SiC, cheka uchitevedza 〈0001〉 kusvika pa ~10 × 10 mm².
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Kupolisha kwakanyatsogadzirwa kusvika paRa ≤0.1 nm uye kuratidza kurongeka kwekristaro.
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SiCKukura kwePVT (Kutakura Utsi Hwemuviri)
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Isa girafu inonamirwa pamoto: pasi neSiC powder, pamusoro nekristaro yembeu.
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Bvisa kusvika pa 10⁻³–10⁻⁵ Torr kana kuti dzorera shure ne helium ine hutsanana hwakanyanya pa 1 atm.
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Pisa nzvimbo inobva mbeu kusvika pa 2100–2300 ℃, chengetedza nzvimbo yembeu iri 100–150 ℃ inotonhorera.
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Dzora mwero wekukura kwechinhu pa 1–5 mm/awa kuti uenzanise kunaka uye simba rechinhu.
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SiCIngot Annealing
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Isa SiC ingot yakakura pa1600–1800 ℃ kwemaawa 4–8.
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Chinangwa: kuderedza kushushikana kwekupisa uye kuderedza kuwanda kwe dislocation.
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SiCKucheka Wafer
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Shandisa waya yedhaimani kucheka ingot kuita mawafer ane ukobvu hwe 0.5–1 mm.
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Deredza kudedera uye simba repadivi kudzivirira kutsemuka kudiki.
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SiCWaferKukuya & Kupukuta
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Kukuya kwakaomararakubvisa kukuvara kwekucheka (kuomarara ~10–30 µm).
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Kukuya zvakanakakuti pave nekutsetseka kwe ≤5 µm.
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Kupukuta Kwemakemikari NeMichina (CMP)kusvika pakupera kwakafanana negirazi (Ra ≤0.2 nm).
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SiCWaferKuchenesa & Kuongorora
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Kuchenesa kwe ultrasonicmuPiranha mhinduro (H₂SO₄:H₂O₂), DI mvura, kozoti IPA.
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XRD/Raman spectroscopykusimbisa polytype (4H, 6H, 3C).
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Interferometrykuyera kutsetseka (<5 µm) uye kutenderera (<20 µm).
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Chinoongorora chine mapoinzi manakuyedza resistivity (semuenzaniso HPSI ≥10⁹ Ω·cm).
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Kuongorora kwakakwana kwezvikanganisopasi pemaikorosikopu echiedza ane polarized uye scratch tester.
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SiCWaferKuronga & Kuronga
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Ronga mawafers zvichienderana nepolytype uye mhando yemagetsi:
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4H-SiC N-type (4H-N): huwandu hwemutakuri 10¹⁶–10¹⁸ cm⁻³
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4H-SiC High Purity Semi-Insulating (4H-HPSI): resistivity ≥10⁹ Ω·cm
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6H-SiC N-rudzi (6H-N)
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Zvimwe: 3C-SiC, P-type, nezvimwewo.
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SiCWaferKurongedza & Kutumira
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Isa mumabhokisi ewafer akachena, asina guruva.
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Isa bhokisi rega rega nedhayamita, ukobvu, polytype, resistivity grade, uye batch number.
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2. Mubvunzo: Ndezvipi zvakanakira maSiC wafers pane masilicon wafers?
A: Zvichienzaniswa nemawafer esilicon, mawafer eSiC anogonesa:
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Kushanda kwemagetsi akawanda(>1,200 V) ine resistance yakaderera.
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Kugadzikana kwekupisa kwepamusoro(>300 °C) uye kuvandudzwa kwekutonga kwekupisa.
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Kumhanya kwekuchinja nekukurumidzanekurasikirwa kwakaderera kwekuchinja, zvichideredza kutonhora kwesystem-level uye saizi mumapower converters.
4. Mubvunzo: Ndezvipi zvikanganiso zvinowanzo kanganisa goho reSiC wafer uye mashandiro ayo?
A: Zvikanganiso zvikuru mumaSiC wafers zvinosanganisira micropipes, basal plane dislocations (BPDs), uye surface scratches. Micropipes inogona kukonzera kutadza kushanda zvakanaka kwemidziyo; BPDs inowedzera kuramba kushanda nekufamba kwenguva; uye surface scratches dzinoita kuti wafer iputsike kana kuti isakure zvakanaka mu epitaxial. Saka kuongorora kwakasimba uye kuderedza zvikanganiso zvakakosha kuti SiC wafer ikure zvakanaka.
Nguva yekutumira: Chikumi-30-2025