SiC wafer's abstract
Silicon carbide (SiC) mawafers ave chikamu chesarudzo chepamusoro-simba, high-frequency, uye yepamusoro-tembiricha yemagetsi mukati memotokari, simba rinogoneka, uye aerospace sector. Yedu portfolio inovhara makiyi polytypes uye doping zvirongwa — nitrogen-doped 4H (4H-N), yakakwirira-purity semi-insulating (HPSI), nitrogen-doped 3C (3C-N), uye p-mhando 4H/6H (4H/6H-P)—inopihwa mumakiredhi matatu emhando: PRIME (yakakwenenzverwa, yakakwenenzverwa, isina kucheneswa DUMMY) ONGORORO (custom epi layers uye doping profiles yeR&D). Wafer madhayamita akareba 2 ″, 4 ″, 6 ″, 8 ″, uye 12 ″ kuti aenderane ese maturusi enhaka uye machira epamusoro. Isu tinopawo monocrystalline boules uye yakanyatso tariswa mhodzi makristasi kutsigira-mumba makristasi kukura.
Yedu 4H-N wafers inoratidzira inotakura densities kubva 1 × 10¹⁶ kusvika 1 × 10¹⁹ cm⁻³ uye resistivities ye 0.01–10 Ω·cm, inounza yakanakisa kufamba kweelectron uye minda yekuputsika pamusoro pe2 MV/cm-yakanakira Schottky diode, uye JOSsFET diode. HPSI substrates inodarika 1×10¹² Ω·cm resistivity ine micropipe densities pazasi 0.1 cm⁻², kuve nechokwadi chekuvuza kushoma kweRF uye microwave zvishandiso. Cubic 3C-N, inowanikwa mu 2 ″ uye 4 ″ mafomati, inogonesa heteroepitaxy pasilicon uye inotsigira novel photonic uye MEMS application. P-mhando 4H/6H-P mawafer, akaiswa aruminiyamu kusvika 1×10¹⁶–5×10¹⁸ cm⁻³, anofambisa dhizaini yekuvaka.
PRIME wafers anovhenekwa nemakemikari-mechanicha kusvika ku <0.2 nm RMS kushata kwepamusoro, kusiyanisa kwehupamhi pasi pe3 µm, uye uta <10 µm. DUMMY substrates inomhanyisa kusangana uye kurongedza bvunzo, nepo RESEARCH wafers inoratidzira epi-layer ukobvu hwe2-30 µm uye bespoke doping. Zvese zvigadzirwa zvinopupurirwa neX-ray diffraction (rocking curve <30 arcsec) uye Raman spectroscopy, ine magetsi ebvunzo-Hall zviyero, C-V profiling, uye micropipe scanning-inoona JEDEC neSEMI kutevedzera.
Maboules anosvika 150 mm dhayamita anokura kuburikidza nePVT uye CVD ine dislocation densities pazasi 1 × 10³ cm⁻² uye yakaderera micropipe kuverenga. Makristasi embeu anochekwa mukati me 0.1° ye-c-axis kuti avimbise kukura kunoberekana uye negoho rekucheka.
Nekubatanidza akawanda mapolytypes, doping akasiyana, emhando yemagiredhi, saizi yewafer, uye-mumba boule uye mhodzi-crystal kugadzirwa, yedu SiC substrate chikuva inofambisa macheni ekugovera uye inomhanyisa kugadzirwa kwemidziyo yemotokari dzemagetsi, magidhi akangwara, uye hutsinye-zvakatipoteredza zvikumbiro.
SiC wafer's abstract
Silicon carbide (SiC) mawafers ave chikamu chesarudzo chepamusoro-simba, high-frequency, uye yepamusoro-tembiricha yemagetsi mukati memotokari, simba rinogoneka, uye aerospace sector. Yedu portfolio inovhara makiyi polytypes uye doping zvirongwa — nitrogen-doped 4H (4H-N), yakakwirira-purity semi-insulating (HPSI), nitrogen-doped 3C (3C-N), uye p-mhando 4H/6H (4H/6H-P)—inopihwa mumakiredhi matatu emhando: PRIME (yakakwenenzverwa, yakakwenenzverwa, isina kucheneswa DUMMY) ONGORORO (custom epi layers uye doping profiles yeR&D). Wafer madhayamita akareba 2 ″, 4 ″, 6 ″, 8 ″, uye 12 ″ kuti aenderane ese maturusi enhaka uye machira epamusoro. Isu tinopawo monocrystalline boules uye yakanyatso tariswa mhodzi makristasi kutsigira-mumba makristasi kukura.
Yedu 4H-N wafers inoratidzira inotakura densities kubva 1 × 10¹⁶ kusvika 1 × 10¹⁹ cm⁻³ uye resistivities ye 0.01–10 Ω·cm, inounza yakanakisa kufamba kweelectron uye minda yekuputsika pamusoro pe2 MV/cm-yakanakira Schottky diode, uye JOSsFET diode. HPSI substrates inodarika 1×10¹² Ω·cm resistivity ine micropipe densities pazasi 0.1 cm⁻², kuve nechokwadi chekuvuza kushoma kweRF uye microwave zvishandiso. Cubic 3C-N, inowanikwa mu 2 ″ uye 4 ″ mafomati, inogonesa heteroepitaxy pasilicon uye inotsigira novel photonic uye MEMS application. P-mhando 4H/6H-P mawafer, akaiswa aruminiyamu kusvika 1×10¹⁶–5×10¹⁸ cm⁻³, anofambisa dhizaini yekuvaka.
PRIME wafers anovhenekwa nemakemikari-mechanicha kusvika ku <0.2 nm RMS kushata kwepamusoro, kusiyanisa kwehupamhi pasi pe3 µm, uye uta <10 µm. DUMMY substrates inomhanyisa kusangana uye kurongedza bvunzo, nepo RESEARCH wafers inoratidzira epi-layer ukobvu hwe2-30 µm uye bespoke doping. Zvese zvigadzirwa zvinopupurirwa neX-ray diffraction (rocking curve <30 arcsec) uye Raman spectroscopy, ine magetsi ebvunzo-Hall zviyero, C-V profiling, uye micropipe scanning-inoona JEDEC neSEMI kutevedzera.
Maboules anosvika 150 mm dhayamita anokura kuburikidza nePVT uye CVD ine dislocation densities pazasi 1 × 10³ cm⁻² uye yakaderera micropipe kuverenga. Makristasi embeu anochekwa mukati me 0.1° ye-c-axis kuti avimbise kukura kunoberekana uye negoho rekucheka.
Nekubatanidza akawanda mapolytypes, doping akasiyana, emhando yemagiredhi, saizi yewafer, uye-mumba boule uye mhodzi-crystal kugadzirwa, yedu SiC substrate chikuva inofambisa macheni ekugovera uye inomhanyisa kugadzirwa kwemidziyo yemotokari dzemagetsi, magidhi akangwara, uye hutsinye-zvakatipoteredza zvikumbiro.
Mufananidzo weSiC wafer
6inch 4H-N mhando yeSiC wafer's data sheet
| 6inch SiC wafers data sheet | ||||
| Parameter | Sub-Parameter | Z Grade | P Giredhi | D Giredhi |
| Diameter | 149.5–150.0 mm | 149.5–150.0 mm | 149.5–150.0 mm | |
| Ukobvu | 4H‑N | 350 µm ± 15 µm | 350 µm ± 25 µm | 350 µm ± 25 µm |
| Ukobvu | 4H‑SI | 500 µm ± 15 µm | 500 µm ± 25 µm | 500 µm ± 25 µm |
| Wafer Orientation | Kubva paaxis: 4.0 ° yakananga <11-20> ± 0.5 ° (4H-N); Paaxis: <0001> ±0.5° (4H-SI) | Kubva paaxis: 4.0 ° yakananga <11-20> ± 0.5 ° (4H-N); Paaxis: <0001> ±0.5° (4H-SI) | Kubva paaxis: 4.0 ° yakananga <11-20> ± 0.5 ° (4H-N); Paaxis: <0001> ±0.5° (4H-SI) | |
| Micropipe Density | 4H‑N | ≤ 0.2 cm⁻² | ≤ 2cm⁻² | ≤ 15 cm⁻² |
| Micropipe Density | 4H‑SI | ≤ 1cm⁻² | ≤ 5cm⁻² | ≤ 15 cm⁻² |
| Resistivity | 4H‑N | 0.015–0.024 Ω·cm | 0.015–0.028 Ω·cm | 0.015–0.028 Ω·cm |
| Resistivity | 4H‑SI | ≥ 1×10¹⁰ Ω·cm | ≥ 1×10⁵ Ω·cm | |
| Yekutanga Flat Oriental | [10-10] ± 5.0° | [10-10] ± 5.0° | [10-10] ± 5.0° | |
| Primary Flat Length | 4H‑N | 47.5 mm ± 2.0 mm | ||
| Primary Flat Length | 4H‑SI | Notch | ||
| Kusabatanidzwa kumucheto | 3 mm | |||
| Warp/LTV/TTV/Bow | ≤2.5 µm / ≤6 µm / ≤25 µm / ≤35 µm | ≤5 µm / ≤15 µm / ≤40 µm / ≤60 µm | ||
| Kukasharara | ChiPolish | Ra ≤ 1 nm | ||
| Kukasharara | CMP | Ra ≤ 0.2 nm | Ra ≤ 0.5 nm | |
| Edge Cracks | Hapana | Cumulative kureba ≤ 20 mm, imwe chete ≤ 2 mm | ||
| Hex Plates | Cumulative area ≤ 0.05% | Cumulative area ≤ 0.1% | Yakawedzerwa nzvimbo ≤ 1% | |
| Polytype Nzvimbo | Hapana | Yakawedzerwa nzvimbo ≤ 3% | Yakawedzerwa nzvimbo ≤ 3% | |
| Carbon Inclusions | Cumulative area ≤ 0.05% | Yakawedzerwa nzvimbo ≤ 3% | ||
| Surface Scratches | Hapana | Hurefu hwekuwedzera ≤ 1 × wafer dhayamita | ||
| Edge Chips | Hapana anotenderwa ≥ 0.2 mm hupamhi & kudzika | Kusvika ku7 machipisi, ≤ 1 mm imwe neimwe | ||
| TSD (Threading Screw Dislocation) | ≤ 500 cm⁻² | N/A | ||
| BPD (Base Plane Dislocation) | ≤ 1000 cm⁻² | N/A | ||
| Surface Kusvibiswa | Hapana | |||
| Packaging | Multi-wafer cassette kana single wafer container | Multi-wafer cassette kana single wafer container | Multi-wafer cassette kana single wafer container | |
4inch 4H-N mhando yeSiC wafer's data sheet
| 4inch SiC wafer's data sheet | |||
| Parameter | Zero MPD Kugadzirwa | Standard Production Giredhi (P Giredhi) | Dummy Giredhi (D giredhi) |
| Diameter | 99.5 mm–100.0 mm | ||
| Hukobvu (4H-N) | 350µm±15µm | 350µm±25µm | |
| Hukobvu (4H-Si) | 500 µm±15µm | 500µm±25µm | |
| Wafer Orientation | Off axis: 4.0 ° yakananga <1120> ± 0.5 ° ye4H-N; Paaxis: <0001> ± 0.5 ° ye4H-Si | ||
| Micropipe Density (4H-N) | ≤0.2 masendimita⁻² | ≤2 masendimita⁻² | ≤15 cm⁻² |
| Micropipe Density (4H-Si) | ≤1 cm⁻² | ≤5 masendimita⁻² | ≤15 cm⁻² |
| Kuramba (4H-N) | 0.015–0.024 Ω·cm | 0.015–0.028 Ω·cm | |
| Resistivity (4H-Si) | ≥1E10 Ω·cm | ≥1E5 Ω·cm | |
| Yekutanga Flat Oriental | [10-10] ±5.0° | ||
| Primary Flat Length | 32.5 mm ±2.0 mm | ||
| Secondary Flat Length | 18.0 mm ±2.0 mm | ||
| Secondary Flat Orientation | Silicon yakatarisana kumusoro: 90 ° CW kubva kune yekutanga flat ± 5.0 ° | ||
| Kusabatanidzwa kumucheto | 3 mm | ||
| LTV/TTV/Bow Warp | ≤2.5 µm/≤5 µm/≤15 µm/≤30 µm | ≤10 µm/≤15 µm/≤25 µm/≤40 µm | |
| Kukasharara | Polish Ra ≤1 nm; CMP Ra ≤0.2 nm | Ra ≤0.5 nm | |
| Edge Cracks By High Intensity Chiedza | Hapana | Hapana | Cumulative kureba ≤10 mm; kureba kamwe ≤2 mm |
| Hex Plates By High Intensity Chiedza | Cumulative area ≤0.05% | Cumulative area ≤0.05% | Cumulative area ≤0.1% |
| Polytype Nzvimbo NeKusimba Kwakanyanya Chiedza | Hapana | Yakawedzerwa nzvimbo ≤3% | |
| Visual Carbon Inclusions | Cumulative area ≤0.05% | Yakawedzerwa nzvimbo ≤3% | |
| Silicon Surface Scratches By High Intensity Chiedza | Hapana | Hurefu hwekuwedzera ≤1 wafer dhayamita | |
| Edge Chips By High Intensity Chiedza | Hapana anotenderwa ≥0.2 mm hupamhi nekudzika | 5 inotenderwa, ≤1 mm imwe neimwe | |
| Silicon Surface Kusvibiswa NeKunyanya Kusimba Chiedza | Hapana | ||
| Threading screw dislocation | ≤500 cm⁻² | N/A | |
| Packaging | Multi-wafer cassette kana single wafer container | Multi-wafer cassette kana single wafer container | Multi-wafer cassette kana single wafer container |
4inch HPSI mhando yeSiC wafer's data sheet
| 4inch HPSI mhando yeSiC wafer's data sheet | |||
| Parameter | Zero MPD Yekugadzira Giredhi (Z Giredhi) | Standard Production Giredhi (P Giredhi) | Dummy Giredhi (D giredhi) |
| Diameter | 99.5–100.0 mm | ||
| Hukobvu (4H-Si) | 500 µm ±20 µm | 500 µm ±25 µm | |
| Wafer Orientation | Kubva paaxis: 4.0 ° yakananga <11-20> ± 0.5 ° ye4H-N; Paaxis: <0001> ± 0.5 ° ye4H-Si | ||
| Micropipe Density (4H-Si) | ≤1 cm⁻² | ≤5 masendimita⁻² | ≤15 cm⁻² |
| Resistivity (4H-Si) | ≥1E9 Ω·cm | ≥1E5 Ω·cm | |
| Yekutanga Flat Oriental | (10-10) ±5.0° | ||
| Primary Flat Length | 32.5 mm ±2.0 mm | ||
| Secondary Flat Length | 18.0 mm ±2.0 mm | ||
| Secondary Flat Orientation | Silicon yakatarisana kumusoro: 90 ° CW kubva kune yekutanga flat ± 5.0 ° | ||
| Kusabatanidzwa kumucheto | 3 mm | ||
| LTV/TTV/Bow Warp | ≤3 µm/≤5 µm/≤15 µm/≤30 µm | ≤10 µm/≤15 µm/≤25 µm/≤40 µm | |
| Hushasha (C face) | ChiPolish | Ra ≤1 nm | |
| Hukasha (Si face) | CMP | Ra ≤0.2 nm | Ra ≤0.5 nm |
| Edge Cracks By High Intensity Chiedza | Hapana | Cumulative kureba ≤10 mm; kureba kamwe ≤2 mm | |
| Hex Plates By High Intensity Chiedza | Cumulative area ≤0.05% | Cumulative area ≤0.05% | Cumulative area ≤0.1% |
| Polytype Nzvimbo NeKusimba Kwakanyanya Chiedza | Hapana | Yakawedzerwa nzvimbo ≤3% | |
| Visual Carbon Inclusions | Cumulative area ≤0.05% | Yakawedzerwa nzvimbo ≤3% | |
| Silicon Surface Scratches By High Intensity Chiedza | Hapana | Hurefu hwekuwedzera ≤1 wafer dhayamita | |
| Edge Chips By High Intensity Chiedza | Hapana anotenderwa ≥0.2 mm hupamhi nekudzika | 5 inotenderwa, ≤1 mm imwe neimwe | |
| Silicon Surface Kusvibiswa NeKunyanya Kusimba Chiedza | Hapana | Hapana | |
| Threading Screw Dislocation | ≤500 cm⁻² | N/A | |
| Packaging | Multi-wafer cassette kana single wafer container | ||
Nguva yekutumira: Jun-30-2025