Silicon Carbide Epitaxy: Nheyo dzeMaitiro, Kudzora Ukobvu, uye Matambudziko Akaremara

Silicon carbide (SiC) epitaxy iri pakati pechinjo yemazuva ano yemagetsi emagetsi. Kubva kumotokari dzemagetsi kusvika kumasisitimu esimba rinodzokororwa uye madhiraivha emaindasitiri ane simba rakawanda, mashandiro uye kuvimbika kwemidziyo yeSiC hakutsamiri zvakanyanya pakugadzirwa kwedunhu pane zvinoitika panguva yekukura kwema micrometer mashoma ekristaro pamusoro pewafer. Kusiyana nesilicon, uko epitaxy iri nzira yakakura uye inokanganwira, SiC epitaxy ibasa rakarurama uye risingakanganwiri mukudzora atomu.

Chinyorwa chino chinoongorora kuti seiSiC epitaxyzvinoshanda, nei kudzora ukobvu kwakakosha kudaro, uye nei zvikanganiso zvichiri chimwe chezvinetso zvakaoma muSiC yese.

1. Chii chinonzi SiC Epitaxy uye Nei Zvichikosha?

Epitaxy inoreva kukura kwe crystalline layer ine marongerwo eatomu anotevera substrate iri pasi. Muzvishandiso zveSiC power, iyi epitaxial layer inoumba nzvimbo inoshanda apo voltage blocking, current conduction, uye switching behavior zvinotsanangurwa.

Kusiyana nemidziyo yesilicon, iyo inowanzo vimba nekushandisa zvinodhaka zvakawanda, michina yeSiC inonyanya kuvimba nezvikamu zve epitaxial zvine ukobvu hwakagadzirwa zvakanaka uye mapurofayiri ekushandisa zvinodhaka. Musiyano we micrometer imwe chete muukobvu hwe epitaxial unogona kuchinja zvakanyanya voltage yekuputsika, kuramba kushanda, uye kuvimbika kwenguva refu.

Muchidimbu, SiC epitaxy haisi nzira inotsigira—inotsanangura mudziyo wacho.

2. Nheyo dzeKukura kweSiC Epitaxial

Mazhinji eSiC epitaxy ekutengeserana anoitwa uchishandisa chemical vapor deposition (CVD) pakupisa kwakanyanya, kazhinji pakati pe1,500 °C ne1,650 °C. Magasi eSilane nehydrocarbon anounzwa mureactor, uko maatomu esilicon necarbon anoora uye anounganazve pamusoro pewafer.

Zvinhu zvakawanda zvinoita kuti SiC epitaxy ive yakaoma kupfuura silicon epitaxy:

• Kubatana kwakasimba kwe covalent pakati pesilicon nekabhoni

• Kupisa kwakanyanya kuri pedyo nemiganhu yekugadzikana kwezvinhu

• Kunzwisisa matanho epamusoro uye kusachekwa kwe substrate

• Kuvapo kwemhando dzakasiyana dzeSiC polytypes

Kunyangwe kutsauka kudiki mukuyerera kwegasi, kufanana kwetembiricha, kana kugadzirira pamusoro pechinhu kunogona kukonzera zvikanganiso zvinopararira kuburikidza ne epitaxial layer.

3. Kudzora Ukobvu: Nei Micrometer Ichikosha

Mumidziyo yeSiC, ukobvu hweepitaxial hunotarisa zvakananga kugona kwemagetsi. Semuenzaniso, mudziyo we1,200 V ungangoda epitaxial layer ine ukobvu hwema micrometer mashoma chete, nepo mudziyo we10 kV uchigona kuda makumi ema micrometer.

Kuwana ukobvu hwakafanana pawafer yese ye150 mm kana 200 mm idambudziko guru reinjiniya. Kusiyana kudiki se±3% kunogona kutungamira ku:

• Kuparadzirwa kwemagetsi kusina kuenzana

• Kuderedzwa kwemhedzisiro yemagetsi ekuputsika

• Kusashanda zvakanaka kwemudziyo nemudziyo

Kudzora ukobvu kunowedzera kuoma nekuda kwekudiwa kwehuwandu hwedoping chaiyo. MuSiC epitaxy, ukobvu nedoping zvakabatana zvakasimba—kugadzirisa chimwe chinowanzo kanganisa chimwe. Kudyidzana uku kunomanikidza vagadziri kuti vaenzanise mwero wekukura, kufanana, uye mhando yezvinhu panguva imwe chete.

4. Zvikanganiso: Dambudziko Rinoramba Richienderera Mberi

Pasinei nekufambira mberi nekukurumidza muindasitiri, zvikanganiso zvichiri chipingamupinyi chikuru muSiC epitaxy. Mamwe emhando dzezvikanganiso zvakanyanya anosanganisira:

• Kubviswa kwenzvimbo dzepasi pendege, iyo inogona kukura panguva yekushanda kwemudziyo uye kukonzera kuora kwebipolar

• Kukanganisa kwekuronga zvinhu, inowanzo konzerwa panguva yekukura kwe epitaxial

• Mapombi madiki, yakaderera zvakanyanya mumidziyo yemazuva ano asi ichiri nepesvedzero mukubudirira

• Kukanganisika kwemakaroti uye zvikanganiso zvetatu, zvakabatana nekusagadzikana kwekukura kwenzvimbo

Chinoita kuti zvikanganiso zve epitaxial zvive nedambudziko guru ndechekuti zvakawanda zvinobva pasi pevhu asi zvinoshanduka panguva yekukura. Wafer inoonekwa seyakanaka inogona kuva nezvikanganiso zvinoshanda nemagetsi chete mushure me epitaxy, zvichiita kuti kuongororwa kwekutanga kuve kwakaoma.

5. Basa reHunhu hweSubstrate

Epitaxy haikwanise kutsiva substrates dzisina kunaka. Kuoma kwenzvimbo, angle isina kurongeka, uye kuwanda kwenzvimbo dzepasi pevhu zvese zvinopesvedzera zvakanyanya mhedzisiro ye epitaxial.

Sezvo dhayamita yewafer ichiwedzera kubva pa150 mm kusvika 200 mm zvichikwira, kuchengetedza mhando yesubstrate yakafanana kunova kwakaoma. Kunyangwe shanduko diki pane wafer inogona kushandura mutsauko mukuru mumaitiro epitaxial, kuwedzera kuoma kwemaitiro uye kuderedza goho rose.

Kubatana uku kwakasimba pakati pe substrate ne epitaxy ndicho chimwe chikonzero nei SiC supply chain yakabatana zvakanyanya kupfuura silicon counterpart yayo.

6. Matambudziko Ekuwedzera Saizi Dzakakura dzeWafer

Kuchinja kuenda kumaSiC wafers makuru kunowedzera dambudziko rega rega re epitaxial. Kuchinja kwekushisa kunowedzera kuoma kudzora, kufanana kwemhepo inoyerera kunowedzera kunzwisisika, uye nzira dzekupararira kwezvirema dzinoreba.

Panguva imwe chete, vagadziri vemidziyo yemagetsi vanoda zvirevo zvakasimba: kuyera kwemagetsi kwakakwira, density yakaderera yekukanganisika, uye kugadzikana kuri nani kwewafer-to-wafer. Saka masisitimu eEpitaxy anofanira kuwana kutonga kuri nani panguva yekushanda pazvikero zvisina kumbofungidzirwa pakutanga zveSiC.

Kusawirirana uku kunotsanangura zvakawanda zvemazuva ano mukugadzira epitaxial reactor uye kugadzirisa maitiro.

7. Nei SiC Epitaxy Inotsanangura Zvehupfumi hweMudziyo

Mukugadzira silicon, epitaxy inowanzo kuve chinhu chinodhura. Mukugadzira SiC, ndiyo inokonzeresa kukosha.

Kubudirira kweEpitaxial kunotarisa zvakananga kuti mawafer mangani anogona kugadzirwa nemidziyo, uye kuti midziyo mingani yakapedzwa inoenderana nezvakatsanangurwa. Kuderera kudiki kwehuwandu hwemadhaka kana kusiyana kweukobvu kunogona kushandura kudzikiswa kukuru kwemitengo padanho resystem.

Ndosaka kufambira mberi muSiC epitaxy kuchiwanzova nemhedzisiro yakakura pakushandiswa kwemusika kupfuura kubudirira mukugadzirwa kwemidziyo pachayo.

8. Kutarisira Mberi

SiC epitaxy iri kufamba zvishoma nezvishoma kubva paunyanzvi kuenda kusayenzi, asi haisati yasvika pakukura kwesilicon. Kufambira mberi kunoenderana nekutarisa zviri nani panzvimbo, kudzora substrate zvakanyanya, uye kunzwisisa kwakadzama kwemaitiro ekuumbwa kwezvikanganiso.

Sezvo magetsi emagetsi achikwira kusvika pakakwirira, tembiricha yakakwira, uye mwero wekuvimbika wakakwira, epitaxy icharamba iri nzira yakanyarara asi ine simba guru inoumba ramangwana retekinoroji yeSiC.

Pakupedzisira, mashandiro emagetsi echizvarwa chinotevera anogona kusarudzwa kwete nemadhayagiramu edunhu kana hunyanzvi hwekurongedza, asi nemarongero akaitwa maatomu nemazvo—epitaxial layer imwe panguva.