Musi wa26, Power Cube Semi yakazivisa kubudirira kwekugadzirwa kwemota yekutanga ye2300V SiC (Silicon Carbide) MOSFET muSouth Korea.
Zvichienzaniswa nema semiconductor aripo eSi (Silicon) aripo, SiC (Silicon Carbide) inogona kutsungirira voltage yakakwira, nokudaro ichinzi chishandiso chechizvarwa chinotevera chinotungamira ramangwana rema semiconductor emagetsi. Inoshanda sechinhu chakakosha chinodiwa pakuunza matekinoroji epamusoro, akadai sekuwanda kwemotokari dzemagetsi uye kuwedzera kwenzvimbo dzedata dzinotungamirwa nehunyanzvi hwekugadzira.
Power Cube Semi ikambani isina ngano inogadzira michina yemagetsi ine zvikamu zvitatu zvikuru: SiC (Silicon Carbide), Si (Silicon), uye Ga2O3 (Gallium Oxide). Munguva pfupi yapfuura, kambani iyi yakatumira nekutengesa Schottky Barrier Diodes (SBDs) ine simba guru kukambani yepasi rose yemagetsi muChina, zvichiwana mukurumbira nekuda kwekugadzira kwayo michina yemagetsi ine zvikamu zvitatu.
Kuburitswa kwe2300V SiC MOSFET kwakakosha sekutanga kwakadai muSouth Korea. Infineon, kambani yepasi rose inoshandisa magetsi emagetsi iri muGermany, yakazivisawo kuti yaizotanga chigadzirwa chayo che2000V munaKurume, asi isina mhando yezvigadzirwa zve2300V.
Infineon's 2000V CoolSiC MOSFET, ichishandisa TO-247PLUS-4-HCC package, inosangana nekudiwa kwekuwedzera kwesimba remagetsi pakati pevagadziri, ichivimbisa kuvimbika kwesystem kunyangwe mumamiriro ezvinhu akaomarara emagetsi ane simba rakawanda uye frequency yekuchinja.
Iyo CoolSiC MOSFET inopa voltage yakakwira ye direct current link, zvichiita kuti simba riwedzere pasina kuwedzera kwe current. Ndiyo yekutanga discrete silicon carbide device pamusika ine voltage ye breakdown ye 2000V, ichishandisa TO-247PLUS-4-HCC package ine creepage distance ye 14mm uye clearance ye 5.4mm. Midziyo iyi ine downswitching losses shoma uye yakakodzera kushandiswa senge solar string inverters, energy storage systems, uye electric vehicle charging.
Zvigadzirwa zveCoolSiC MOSFET 2000V zvakakodzera masisitimu emabhazi eDC ane voltage yakakura anosvika 1500V DC. Zvichienzaniswa ne1700V SiC MOSFET, mudziyo uyu unopa mukana wakakwana we overvoltage kune masisitimu e1500V DC. CoolSiC MOSFET ine threshold voltage ye4.5V uye ine ma body diodes akasimba ekuchinja kwakasimba. Ne tekinoroji yekubatanidza ye.XT, zvikamu izvi zvinopa kushanda kwakanaka kwekupisa uye kudzivirira hunyoro hwakasimba.
Kuwedzera kune 2000V CoolSiC MOSFET, Infineon ichakurumidza kuburitsa maCoolSiC diodes akawedzerwa akaiswa mumapakeji eTO-247PLUS 4-pin uye TO-247-2 muchikamu chechitatu chegore ra2024 nechikamu chekupedzisira chegore ra2024, zvichiteerana. Madiodes aya anonyanya kukodzera kushandiswa kwezuva. Kusanganiswa kwezvigadzirwa zvemagedhi driver kunowanikwawo.
Zvigadzirwa zveCoolSiC MOSFET 2000V zvava kuwanikwa pamusika. Uyezve, Infineon inopa mabhodhi ekuongorora akakodzera: EVAL-COOLSIC-2KVHCC. Vagadziri vanogona kushandisa bhodhi iri sepuratifomu chaiyo yekuyedza kuongorora maCoolSiC MOSFET ese nemadiode akayerwa pa2000V, pamwe neEiceDRIVER compact single-channel isolation gate driver 1ED31xx product series kuburikidza ne dual-pulse kana continuous PWM operation.
Gung Shin-soo, Mukuru weTekinoroji wePower Cube Semi, akati, "Takakwanisa kuwedzera ruzivo rwedu rwekugadzira nekugadzira ma1700V SiC MOSFETs kusvika ku2300V."
Nguva yekutumira: Kubvumbi-08-2024