Musi wa26, Power Cube Semi yakazivisa kubudirira kwekutanga kweSouth Korea 2300V SiC (Silicon Carbide) MOSFET semiconductor.
Kuenzaniswa neiyo iripo Si (Silicon) yakavakirwa semiconductors, SiC (Silicon Carbide) inogona kushingirira yakakwira voltages, nekudaro ichirumbidzwa sechigadzirwa chechizvarwa chinotevera chinotungamira ramangwana remagetsi semiconductors. Inoshanda sechinhu chakakosha chinodiwa pakuunza matekinoroji ekucheka-cheka, sekuwanda kwemotokari dzemagetsi uye kuwedzera kwenzvimbo dzedata kunotungamirwa nehungwaru hwekugadzira.
Power Cube Semi ikambani isina fabless inogadzira magetsi semiconductor zvishandiso mumapoka matatu makuru: SiC (Silicon Carbide), Si (Silicon), uye Ga2O3 (Gallium Oxide). Munguva pfupi yapfuura, kambani yakanyorera uye yakatengesa yepamusoro-soro Schottky Barrier Diodes (SBDs) kukambani yepasi rose yemotokari yemagetsi muChina, ichiwana kuzivikanwa kwekugadzira kwayo semiconductor uye tekinoroji.
Kuburitswa kwe2300V SiC MOSFET kwakakosha seyekutanga nyaya yekusimudzira yakadai muSouth Korea. Infineon, kambani yepasi rose yemagetsi semiconductor yakavakirwa kuGermany, yakazivisawo kutangwa kwechigadzirwa chayo che2000V munaKurume, asi isina 2300V chigadzirwa mutsara.
Infineon's 2000V CoolSiC MOSFET, ichishandisa TO-247PLUS-4-HCC package, inosangana nezvinodiwa zvekuwedzera simba remagetsi pakati pevagadziri, kuve nechokwadi chekuvimbika kwehurongwa kunyangwe pasi pekuomesera kwakakwira-voltage uye kushandura frequency mamiriro.
Iyo CoolSiC MOSFET inopa yakakwira yakananga ikozvino yekubatanidza voltage, inogonesa kuwedzera simba pasina kuwedzera ikozvino. Ndiyo yekutanga discrete silicon carbide mudziyo pamusika ine breakdown voltage ye2000V, ichishandisa TO-247PLUS-4-HCC package ine creepage chinhambwe che14mm uye kubvumidzwa kwe5.4mm. Midziyo iyi inoratidzira kurasikirwa kwekuchinja kwakaderera uye inokodzera zvikumbiro senge solar tambo inverters, masisitimu ekuchengetedza simba, uye kubhadharisa mota yemagetsi.
Iyo CoolSiC MOSFET 2000V chigadzirwa chakatevedzana chakakodzera yakakwirira-voltage DC mabhazi masisitimu anosvika 1500V DC. Kuenzaniswa ne1700V SiC MOSFET, chishandiso ichi chinopa yakakwana overvoltage margin ye1500V DC masisitimu. Iyo CoolSiC MOSFET inopa 4.5V chikumbaridzo voltage uye inouya yakashongedzerwa neakasimba emuviri diode yekuomarara kutenderera. Ne .XT yekubatanidza tekinoroji, zvikamu izvi zvinopa yakanakisa kupisa kwekuita uye yakasimba humidity kuramba.
Pamusoro peiyo 2000V CoolSiC MOSFET, Infineon ichakurumidza kuburitsa ekuwedzera CoolSiC diodes akaiswa muTO-247PLUS 4-pini uye TO-247-2 mapakeji muchikamu chechitatu che2024 uye chikamu chekupedzisira che2024, zvichiteerana. Aya ma diode anonyanya kukodzera kushandiswa kwezuva. Kufananidza gedhi mutyairi chigadzirwa misanganiswa inowanikwawo.
Iyo CoolSiC MOSFET 2000V chigadzirwa chakatevedzana chave kuwanikwa pamusika. Uyezve, Infineon inopa mabhodhi ekuongorora akakodzera: EVAL-COOLSIC-2KVHCC. Vagadziri vanogona kushandisa bhodhi iri seyakanyatso bvunzo chikuva chekuongorora ese CoolSiC MOSFETs uye madhiodhi akatemerwa pa2000V, pamwe neEiceDRIVER compact single-channel isolation gedhi mutyairi 1ED31xx chigadzirwa akatevedzana kuburikidza maviri-pulse kana kuenderera mberi kwePWM kushanda.
Gung Shin-soo, Chief Technology Officer wePower Cube Semi, akati, "Takakwanisa kuwedzera ruzivo rwedu rwaivepo mukuvandudza nekugadzirwa kwakawanda kwe1700V SiC MOSFETs kusvika 2300V.
Nguva yekutumira: Kubvumbi-08-2024