Zvikamu zveSemiconductor uye Epitaxy: Nheyo dzehunyanzvi dziri shure kweSimba reMazuva Ano neRF Devices

Kufambira mberi mune tekinoroji ye semiconductor kuri kuwedzera kutsanangurwa nekubudirira munzvimbo mbiri dzakakosha:zvigadzikouyezvikamu zve epitaxialZvikamu zviviri izvi zvinoshanda pamwe chete kuti zvione mashandiro emagetsi, kupisa, uye kuvimbika kwemidziyo yepamusoro inoshandiswa mumotokari dzemagetsi, nzvimbo dzemagetsi dze5G, zvigadzirwa zvemagetsi zvevatengi, uye masisitimu ekutaurirana emaziso.

Kunyange zvazvo substrate ichipa hwaro hwemuviri uye hwekristaro, epitaxial layer inoumba musimboti unoshanda apo maitiro e-high-frequency, high-power, kana optoelectronic anogadzirwa. Kuenderana kwavo—kurongeka kwekristaro, kuwedzera kwekupisa, uye hunhu hwemagetsi—zvakakosha pakugadzira michina inoshanda zvakanyanya, kuchinja nekukurumidza, uye kuchengetedza simba rakawanda.

Chinyorwa chino chinotsanangura mashandiro anoita ma substrates nema epitaxial technologies, nei zvichikosha, uye kuti zvinoumba sei ramangwana rezvinhu zve semiconductor zvakaita seSi, GaN, GaAs, safaya, uye SiC.

1. Chii chinonziChikamu cheSemiconductor?

Substrate i "puratifomu" imwe chete inogadzirwa nekristaro. Inopa rutsigiro rwechimiro, kupisa, uye template yemaatomu inodiwa pakukura kwe epitaxial yemhando yepamusoro.

Sapphire Square Blank Substrate - Optical, Semiconductor, uye Test Wafer

Mabasa Akakosha eSubstrate

  • Rutsigiro rwemakanika:Inoita shuwa kuti mudziyo wacho unoramba wakasimba panguva yekugadzirisa nekushanda.

  • Template yekristaro:Inotungamira epitaxial layer kuti ikure neatomic lattices dzakarongerwa, zvichideredza zvikanganiso.

  • Basa remagetsi:Inogona kutenderedza magetsi (semuenzaniso, Si, SiC) kana kushanda sechinodzivirira (semuenzaniso, safaya).

Zvinhu Zvakajairika zveSubstrate

Zvinhu Zvimiro Zvikuru Maitiro Akajairika
Silikoni (Si) Maitiro ekukura, anodhura zvishoma MaIC, maMOSFET, maIGBT
Safaya (Al₂O₃) Kudzivirira kupisa, kushivirira kupisa kwakanyanya Ma LED akavakirwa paGaN
Silicon Carbide (SiC) Kupisa kwakanyanya, voltage yakanyanya kuputsika Mamodule emagetsi eEV, zvishandiso zveRF
Gallium Arsenide (GaAs) Kufamba kwemaerekitironi akawanda, bandgap yakananga Machipisi eRF, lasers
Gallium Nitride (GaN) Kufamba kwakanyanya, voltage yakakwira Machaja anokurumidza, 5G RF

Magadzirirwo Anoitwa Zvidimbu

  1. Kucheneswa kwezvinhu:Silicon kana zvimwe zvinhu zvinonatswa kusvika zvanyatsonaka.

  2. Kukura kwekristaro imwe chete:

    • Czochralski (CZ)- nzira inonyanya kushandiswa yesilicon.

    • Nzvimbo Inoyangarara (FZ)- inogadzira makristaro akachena zvakanyanya.

  3. Kucheka nekupukuta wafer:Mabhora anochekwa kuita mawafers uye anokweshwa kuti aite seatomu.

  4. Kuchenesa nekuongorora:Kubvisa tsvina uye kuongorora kuwanda kwezvikanganiso.

Matambudziko eUnyanzvi

Zvimwe zvinhu zvemhando yepamusoro—kunyanya SiC—zvinonetsa kugadzira nekuda kwekukura kwekristaro zvishoma nezvishoma (0.3–0.5 mm/awa chete), zvinodiwa pakudzora tembiricha zvakanyanya, uye kurasikirwa kukuru kwekucheka (kurasikirwa kweSiC kerf kunogona kusvika >70%). Kuoma uku ndechimwe chezvikonzero nei zvinhu zvechizvarwa chechitatu zvichiri kudhura.

2. Chii chinonzi Epitaxial Layer?

Kugadzira epitaxial layer zvinoreva kuisa firimu rakatetepa, rakachena zvakanyanya, rine kristalo imwe chete pachigadziko chine lattice yakatarisana zvakanaka.

Chikamu che epitaxial chinoona kutimaitiro emagetsiyemudziyo wekupedzisira.

Nei Epitaxy Ichikosha

  • Inowedzera kuchena kwekristaro

  • Inogonesa mapurofayiri ekushandisa zvinodhaka akagadzirwa

  • Inoderedza kupararira kwezvirema zve substrate

  • Inogadzira magadzirirwo akasiyana-siyana akadai se quantum wells, HEMTs, uye superlattices

Main Epitaxy Technologies

Maitiro Zvinhu zvirimo Zvinhu Zvakajairika
MOCVD Kugadzira zvinhu zvakawanda GaN, GaAs, InP
MBE Kunyatsojeka kwechiyero cheatomu Superlattices, zvishandiso zve quantum
LPCVD Yunifomu silicon epitaxy Si, SiGe
HVPE Kukura kwakanyanya Mafirimu akakora eGaN

MaParamita Akakosha muEpitaxy

  • Ukobvu hwechikamu:Nanometers dzematsime equantum, kusvika ku100 μm dzezvishandiso zvemagetsi.

  • Kushandisa zvinodhaka:Inogadzirisa huwandu hwezvinhu zviri mumidziyo kuburikidza nekupinza tsvina nemazvo.

  • Hunhu hweinterface:Inofanira kuderedza kukanganiswa uye kushushikana kunokonzerwa nekusawirirana kwelattice.

Matambudziko muHeteroepitaxy

  • Kusawirirana kweLattice:Semuenzaniso, kusawirirana kweGaN nesafire ne ~13%.

  • Kusawirirana kwekuwedzera kwekupisa:Zvinogona kukonzera kutsemuka panguva yekutonhora.

  • Kudzora zvikanganiso zvakakwana:Inoda mabuffer layers, magraded layers, kana nucleation layers.

3. Mashandiro anoita Substrate neEpitaxy Pamwe Chete: Mienzaniso Yechokwadi

GaN LED paSapphire

  • Safira haidhuri uye inochengetedza ngura.

  • Mabuffer layers (AlN kana GaN inodziya zvishoma) anoderedza kusawirirana kwelattice.

  • Matsime emhando dzakasiyana-siyana (InGaN/GaN) anoumba nzvimbo inoburitsa chiedza.

  • Inokwanisa kuwana huremu hwakaipa huri pasi pe10⁸ cm⁻² uye inoshanda zvakanaka nechiedza.

SiC Power MOSFET

  • Inoshandisa 4H-SiC substrates ine kugona kukuru kwekupwanya.

  • Matanda ekudonha kwemagetsi eEpitaxial (10–100 μm) anoona chiyero chemagetsi.

  • Inopa ~90% yakaderera yekurasikirwa kwemhepo kupfuura midziyo yemagetsi yesilicon.

Zvishandiso zveRF zveGaN-on-Silicon

  • Zvishandiso zvesilicon zvinoderedza mutengo uye zvinoita kuti zvikwanise kubatanidzwa neCMOS.

  • AlN nucleation layers uye maengineered buffers anodzora kusvuta.

  • Inoshandiswa kumachipisi e5G PA anoshanda pama frequency e millimeter-wave.

4. Substrate vs. Epitaxy: Kusiyana Kwakakosha

Chiyero Substrate Rutivi rweEpitaxial
Chinodiwa chekristaro Inogona kuva imwe-kristaro, polycrystal, kana amorphous Inofanira kunge iri kristaro imwe chete ine lattice yakarongeka
Kugadzira Kukura kwekristaro, kucheka, kupukuta Kuisa firimu rakatetepa kuburikidza neCVD/MBE
Basa Rutsigiro + kupisa kunotungamira + chigadziko chekristaro Kugadzirisa mashandiro emagetsi
Kushivirira zvikanganiso zvakakwana Yakakwira (semuenzaniso, SiC micropipe spec ≤100/cm²) Yakaderera zvakanyanya (semuenzaniso, dislocation density <10⁶/cm²)
Mhedzisiro Inotsanangura denga rekushanda Inotsanangura maitiro chaiwo emudziyo

5. Matekinoroji Aya Ari Kuenda Kupi

Saizi dzeWafer dzakakura

  • Si ichichinja kuita 12-inch

  • SiC inoshanduka kubva pa6-inch kuenda ku8-inch (kuderedza kukuru kwemutengo)

  • Dhayamita yakakura inovandudza simba rekushandisa uye inoderedza mutengo wemuchina

Heteroepitaxy Inodhura Zvishoma

GaN-on-Si neGaN-on-saphire zviri kuramba zvichishandiswa senzira dzekushandisa panzvimbo pezvinhu zvinodhura zveGaN.

Maitiro Epamusoro Ekucheka Nekukura

  • Kucheka nechando kunogona kuderedza kurasikirwa kweSiC kerf kubva pa ~75% kusvika ku ~50%.

  • Magadzirirwo echoto akavandudzwa anowedzera goho reSiC uye kufanana kwaro.

Kubatanidzwa kweMabasa eOptical, Power, uye RF

Epitaxy inogonesa matsime equantum, ma superlattice, uye ma layers akasunganidzwa akakosha kune ma photonics akabatanidzwa mune ramangwana uye magetsi emagetsi anoshanda zvakanyanya.

Mhedziso

Zvidimbu ne epitaxy zvinoumba musimboti wetekinoroji wema semiconductor emazuva ano. Substrate iyi inogadza hwaro hwemuviri, hwekupisa, uye hwekristaro, ukuwo epitaxial layer ichitsanangura mashandiro emagetsi anogonesa kushanda kwemuchina wepamusoro.

Sezvo kudiwa kuri kukura kwesimba guru, mafrequency akawanda, uye kushanda zvakanaka kwazvomasisitimu—kubva kumotokari dzemagetsi kusvika kunzvimbo dzedata—matekinoroji maviri aya acharamba achichinja pamwe chete. Kuvandudzwa kwehukuru hwewafer, kudzora kukanganisa, heteroepitaxy, uye kukura kwekristaro kuchaumba chizvarwa chinotevera chezvinhu zve semiconductor uye mapurani emidziyo.


Nguva yekutumira: Mbudzi-21-2025