Zvinhu Zvikuru Zvekufunga Nezvekugadzira Silicon Carbide (SiC) Single Crystals Yemhando Yepamusoro
Nzira huru dzekurima makristaro esilicon carbide single dzinosanganisira Physical Vapor Transport (PVT), Top-Seeded Solution Growth (TSSG), uye High-Temperature Chemical Vapor Deposition (HT-CVD).
Pakati peizvi, nzira yePVT yave nzira huru yekugadzira maindasitiri nekuda kwekugadzirisa kwayo michina zviri nyore, nyore kushandisa nekudzora, uye mitengo yakaderera yemidziyo nekushanda.
Pfungwa Huru dzeUnyanzvi dzeKukura kweSiC Crystal Uchishandisa Nzira yePVT
Kuti ukure makristaro esilicon carbide uchishandisa nzira yePVT, zvinhu zvinoverengeka zvehunyanzvi zvinofanirwa kudzorwa nokungwarira:
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Kuchena Kwezvinhu zveGraphite Mumunda Wekupisa
Zvinhu zvegrafiti zvinoshandiswa mumunda wekupisa kwekristaro zvinofanirwa kusangana nezvinodiwa zvekuchena. Kuchena kuri muzvikamu zvegrafiti kunofanirwa kunge kuri pasi pe5×10⁻⁶, uye kune mafelt ekudzivirira kupisa kunofanirwa kunge kuri pasi pe10×10⁻⁶. Kunyanya, zviri muboron (B) nealuminium (Al) zvinofanira kunge zviri pasi pe0.1×10⁻⁶. -
Polarity Yakarurama yeMbeu yeKristaro
Ruzivo rwechokwadi runoratidza kuti C-face (0001) yakakodzera kukura makristaro e4H-SiC, nepo Si-face (0001) yakakodzera kukura kwe6H-SiC. -
Kushandisa Makristaro Embeu Asina Kuenderana
Mbeu dzisina kusimba dzinogona kuchinja kukura kwemhando dzakasiyana, kuderedza zvikanganiso zvemakristaro, uye kukurudzira kunaka kwemakristaro. -
Nzira Yakavimbika Yokubatanidza Mbeu neKristaro
Kubatana kwakakodzera pakati pekristaro yembeu nechibatiso kwakakosha kuti pave nekugadzikana panguva yekukura. -
Kuchengetedza Kugadzikana kweGrowth Interface
Munguva yese yekukura kwekristaro, chimiro chekukura chinofanira kuramba chakasimba kuti chive nechokwadi chekuvandudzwa kwekristaro yemhando yepamusoro.
Matekinoroji eCore muSiC Crystal Growth
1. Tekinoroji yeDoping yeSiC Powder
Kuisa mushonga weSiC powder ne cerium (Ce) kunogona kudzikamisa kukura kwemhando imwe chete yepolytype yakaita se 4H-SiC. Zvakaitwa zvinoratidza kuti Ce doping inogona:
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Wedzera mwero wekukura kwemakristaro eSiC;
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Kuvandudza kurongeka kwekristaro kuti kukura kwakafanana uye kwakanangana;
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Deredza kusvibiswa uye zvikanganiso;
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Dzivisa ngura yekristaro kumashure;
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Wedzera mwero wekukohwa kwekristaro imwe chete.
2. Kudzora Axial uye Radial Thermal Gradients
Kupisa kweaxial kunokanganisa crystal polytype uye kukura kwehuwandu. Kupisa kwakanyanya kunogona kukonzera kusanganiswa kwepolytype uye kuderedzwa kwekutakurwa kwezvinhu muchikamu chevapor. Kugadzirisa gradients dzese dziri axial neradial kwakakosha kuti crystal ikure nekukurumidza uye yakagadzikana ine mhando yakafanana.
3. Tekinoroji Yekudzora Kubviswa Kwendege Yepasi (BPD)
MaBPD anoumbwa zvakanyanya nekuda kwekusvuta kwakanyanya kupfuura mwero unokosha mumakristaro eSiC, zvichibatsira masystem ekutsvedza. Sezvo maBPD akatarisana negwara rekukura, anowanzo simuka panguva yekukura kwekristaro uye kutonhora. Kuderedza kusvuta kwemukati kunogona kuderedza zvakanyanya kuwanda kweBPD.
4. Kudzora Kuumbwa kweVapor Phase Ratio
Kuwedzera chiyero chekabhoni-ku-silicon muchikamu chevapor inzira yakasimbiswa yekukurudzira kukura kwemhando imwe chete yepolytype. Chiyero chepamusoro cheC/Si chinoderedza macrostep bunching uye chinochengetedza nhaka yenzvimbo kubva kukristaro yembeu, nokudaro zvichidzivisa kuumbwa kwemhando dzepolytype dzisingadiwe.
5. Maitiro Ekukura Asina Kushushikana
Kushushikana panguva yekukura kwekristaro kunogona kukonzera maronda akakombama, kutsemuka, uye kuwanda kweBPD. Kukanganisa uku kunogona kupararira muzvikamu zve epitaxial uye kukanganisa mashandiro emudziyo.
Nzira dzakasiyana-siyana dzekuderedza kushushikana kwekristaro yemukati dzinosanganisira:
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Kugadzirisa kugoverwa kwenzvimbo inopisa uye ma process parameters kuti zvikurudzire kukura kwenzvimbo dzinenge dzakaenzana;
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Kugadzirisa dhizaini ye crucible kuti kristaro ikure zvakasununguka pasina zvipingamupinyi zvemakanika;
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Kuvandudza mamiriro emubati wembeu kuderedza kusawirirana kwekuwedzera kwekupisa pakati pembeu negraphite panguva yekupisa, kazhinji nekusiya mukaha we 2 mm pakati pembeu nemubati;
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Kugadzirisa maitiro ekuchenesa, kubvumira kristaro kuti itonhore nechoto, uye kugadzirisa tembiricha uye nguva kuti ibvise kushushikana kwemukati.
Mafambiro muSiC Crystal Growth Technology
1. Saizi dzeKristaro dzakakura
Madhayamita eSiC single crystal akawedzera kubva pamamilimita mashoma kusvika kumawafer ane 6-inch, 8-inch, uye kunyange 12-inch. Mawafer makuru anowedzera kushanda zvakanaka kwekugadzira uye anoderedza mitengo, ukuwo achizadzisa zvinodiwa nemidziyo ine simba guru.
2. Hunhu Hwakakwirira hweKristaro
Makristaro eSiC emhando yepamusoro akakosha pamidziyo inoshanda zvakanaka. Pasinei nekuvandudzwa kukuru, makristaro aripo achiri kuratidza zvikanganiso zvakaita sema micropipes, dislocations, uye tsvina, zvese izvi zvinogona kukanganisa mashandiro emidziyo uye kuvimbika kwayo.
3. Kuderedza Mutengo
Kugadzirwa kweSiC crystal kuchiri kudhura zvishoma, zvichideredza kushandiswa kwakakura. Kuderedza mitengo kuburikidza nekukura kwakanaka, kuwedzera kushanda zvakanaka kwekugadzira, uye kudzikisa mitengo yezvinhu zvakagadzirwa kwakakosha pakuwedzera mashandisirwo emusika.
4. Kugadzira Zvinhu Zvine Hungwaru
Nekufambira mberi muhungwaru hwekugadzira uye tekinoroji yedata hombe, kukura kweSiC crystal kuri kufambira mberi kune maitiro akangwara, otomatiki. Masensa nemasisitimu ekudzora anogona kutarisa nekugadzirisa mamiriro ekukura munguva chaiyo, zvichivandudza kugadzikana kwemaitiro uye kufanotaura. Kuongororwa kwedata kunogona kuwedzera kugadzirisa ma process parameters uye mhando yekristaro.
Kuvandudzwa kwetekinoroji yeSiC single crystal growth yemhando yepamusoro ndiyo inonyanya kutariswa mukutsvagisa zvinhu zve semiconductor. Sezvo tekinoroji ichifambira mberi, nzira dzekukura kwekristaro dzicharamba dzichichinja uye dzichivandudzika, zvichipa hwaro hwakasimba hwekushandiswa kweSiC mumidziyo yemagetsi inodziya zvakanyanya, ine mafrequency akawanda, uye ine simba guru.
Nguva yekutumira: Chikunguru-17-2025