Nzira huru dzekukura silicon carbide single crystals dzinosanganisira Physical Vapor Transport (PVT), Top-Seeded Solution Growth (TSSG), uye High-Temperature Chemical Vapor Deposition (HT-CVD).

Pakati peizvi, nzira yePVT yave nzira yekutanga yekugadzira maindasitiri nekuda kwekureruka kwayo kuseta michina, nyore kushanda uye kutonga, uye yakaderera michina uye mutengo wekushandisa.

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Yakakosha Tekinoroji Mapoinzi eSiC Crystal Kukura Uchishandisa iyo PVT Nzira

Kuti ukure silicon carbide makristasi uchishandisa iyo PVT nzira, akati wandei tekinoroji maficha anofanirwa kudzorwa zvakanaka:

1. Kuchena kweGraphite Zvishandiso muThermal Field
   Iyo girafu zvinhu zvinoshandiswa mukristaro yekukura inopisa munda zvinofanirwa kusangana zvakasimba nekuchena zvinodiwa. Izvo zvisina kuchena zviri muzvikamu zvegraphite zvinofanira kunge zviri pasi pe5 × 10⁻⁶, uye nokuda kwekuvharidzira kunzwa pasi pe10 × 10⁻⁶. Kunyanya, zviri mukati meboron (B) uye aluminium (Al) imwe neimwe inofanira kunge iri pazasi 0.1×10⁻⁶.

2. Yakarurama Polarity yeMbeu Crystal
   Empirical data inoratidza kuti C-face (0001) yakakodzera kukura 4H-SiC makristasi, nepo Si-face (0001) yakakodzera 6H-SiC kukura.

3. Kushandisa Off-Axis Mbeu Makristasi
   Mbeu dzeOff-axis dzinogona kushandura symmetry yekukura, kuderedza kukanganisa kwekristaro, uye kukurudzira kunaka kwekristaro.

4. Mbeu Yakavimbika Crystal Bonding Technique
   Kubatana kwakakodzera pakati pekristaro yembeu uye mubati kwakakosha pakugadzikana panguva yekukura.

5. Kuchengetedza Kugadzikana kweiyo Kukura Interface
   Munguva yese yekristaro yekukura kutenderera, iyo yekukura interface inofanirwa kuramba yakagadzikana kuti ive nechokwadi chepamusoro-mhando yekuvandudza kwekristaro.

 

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Core Technologies muSiC Crystal Kukura

1. Doping Technology yeSiC Powder

Doping SiC poda ine cerium (Ce) inogona kudzikamisa kukura kweimwe polytype yakadai se4H-SiC. Kudzidzira kwakaratidza kuti Ce doping inogona:

• Wedzera kuwedzera kwekukura kweSiC makristasi;

• Kuvandudza kutaridzika kwekristaro kune imwe yunifomu uye inotungamira kukura;

• Deredza kusvibiswa uye kukanganisa;

• Dzvinyirira kuseri kwekuora kwekristaro;

• Wedzera mwero wegoho rekristaro rimwe chete.

2. Kudzora kweAxial uye Radial Thermal Gradients

Axial tembiricha gradients inokanganisa iyo crystal polytype uye chiyero chekukura. Iyo gradient idiki zvakanyanya inogona kutungamira kune polytype inclusions uye kuderedzwa kwekutakura zvinhu muchikamu chemhute. Kugadzirisa ese ari maviri axial uye radial gradients kwakakosha kukurumidza uye kugadzikana kwekristaro kukura neinowirirana mhando.

3. Basal Plane Dislocation (BPD) Kudzora Technology

BPDs inoumba zvakanyanya nekuda kwekuveura kushushikana kudarika iyo yakakosha chikumbaridzo muSiC makristasi, inomisikidza masisitimu ekutsvedza. Sezvo maBPD ari perpendicular kune nzira yekukura, anowanzo simuka panguva yekukura kwekristaro uye kutonhora. Kuderedza kushushikana kwemukati kunogona kuderedza zvakanyanya BPD density.

4. Vapor Phase Composition Ratio Kudzora

Kuwedzera iyo kabhoni-ku-silicon reshiyo mumhute chikamu inzira yakasimbiswa yekusimudzira imwe polytype kukura. Chiyero cheC / Si chepamusoro chinoderedza macrostep bunching uye inochengetedza nhaka yepasi kubva kukristaro yembeu, nokudaro kudzvinyirira kuumbwa kwemapolytypes asingadiwi.

5. Low-Stress Growth Techniques

Kushushikana panguva yekukura kwekristaro kunogona kutungamira kune dzakakomberedzwa ndege dzemareti, kutsemuka, uye yakakwirira BPD densities. Izvi zvinokanganisa zvinogona kutakura mu epitaxial layers uye zvinokanganisa mashandiro emudziyo.

Maitiro akati wandei ekudzikisa mukati mekristaro kusagadzikana anosanganisira:

• Kugadzirisa kugovera kwemunda wekupisa uye maitiro ekugadzirisa kusimudzira pedyo-kuenzana kukura;

• Kugadzirisa dhizaini ye crucible kubvumira kristaro kuti ikure zvakasununguka pasina dhizaini yekumanikidza;

• Kuvandudza magadzirirwo emuridzi wembeu kuderedza kukanganiswa kwekuwedzera kwekupisa pakati pembeu negraphite panguva yekudziya, kazhinji nekusiya 2 mm gap pakati pembeu nemubati;

• Kukwenenzvera annealing maitiro, kubvumira iyo kristaro kuti itonhorere pasi nechoto, uye kugadzirisa tembiricha uye nguva kuti ibvise zvizere kushushikana kwemukati.

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Maitiro muSiC Crystal Kukura Technology

1. Yakakura Crystal Sizes
SiC single crystal diameters yakawedzera kubva pamamirimita mashoma kusvika 6-inch, 8-inch, uye kunyange 12-inch wafers. Mawaferi akakura anosimudzira kugadzirwa kwakanaka uye kuderedza mitengo, uku achisangana nezvinodiwa zveakakwira-simba mudziyo zvishandiso.

2. Yakakwirira Crystal Quality
Yepamusoro-mhando SiC makristasi akakosha kune yepamusoro-inoshanda michina. Pasinei nekuvandudzwa kwakakosha, makristasi emazuva ano achiri kuratidza hurema hwakadai semicropipes, dislocation, uye tsvina, izvo zvese zvinogona kukanganisa kushanda kwechigadzirwa uye kuvimbika.

3. Kuderedza Mutengo
SiC crystal kugadzirwa kuchiri kudhura, kudzikamisa kutorwa kwakakura. Kudzikisa mitengo kuburikidza neyakagadziridzwa maitirwo ekukura, kuwedzera kugadzirwa kwehunyanzvi, uye kuderera kwemitengo yezvinhu zvakakosha mukuwedzera misika yekushandisa.

4. Intelligent Manufacturing
Nekufambira mberi muhungwaru hwekugadzira uye yakakura data tekinoroji, SiC crystal kukura kuri kuenda kune hungwaru, otomatiki maitiro. Sensors uye masisitimu ekudzora anogona kutarisa uye kugadzirisa mamiriro ekukura munguva chaiyo, kuvandudza kugadzikana kwemaitiro uye kufungidzira. Data analytics inogona kuwedzera optimize process paramita uye crystal mhando.

Iko kuvandudza kwemhando yepamusoro SiC single crystal yekukura tekinoroji ndiyo inonyanya kutariswa mu semiconductor zvinhu zvekutsvaga. Sezvo tekinoroji ichifambira mberi, nzira dzekukura kwekristaro dzicharamba dzichishanduka uye dzichivandudza, zvichipa hwaro hwakasimba hweSiC application mune yakakwirira-tembiricha, yakakwirira-frequency, uye yakakwirira-simba zvemagetsi zvishandiso.