Mafungiro Akakosha ePamusoro-Unhu Silicon Carbide Imwe Crystal Kugadzirira

Nzira huru dzesilicon single crystal gadziriro dzinosanganisira: Physical Vapor Transport (PVT), Top-Seeded Solution Growth (TSSG), uye High-Temperature Chemical Vapor Deposition (HT-CVD). Pakati peizvi, nzira yePVT inogamuchirwa zvakanyanya mukugadzirwa kwemaindasitiri nekuda kwemidziyo yayo iri nyore, kudzora nyore, uye yakaderera michina uye mutengo wekushandisa.

Key Tekinoroji Mapoinzi ePVT Kukura kweSilicon Carbide Makristasi

Kana uchikura silicon carbide makristasi uchishandisa Physical Vapor Transport (PVT) nzira, zvinotevera tekinoroji zvinhu zvinofanirwa kutariswa:

1. Kuchena kweZvishandiso zveGraphite muChikamu cheKukura: Izvo zvisina kuchena zviri muzvikamu zvegraphite zvinofanirwa kunge zviri pazasi 5 × 10⁻⁶, nepo kusachena kuri mukati mekudzivirira kunonzwa kunofanirwa kunge kuri pasi pe10 × 10⁻⁶. Zvinhu zvakadai seB uye Al zvinofanirwa kuchengetwa pazasi 0.1×10⁻⁶.
2. Yakarurama Mbeu Crystal Polarity Selection: Zvidzidzo zveEmpirical zvinoratidza kuti chiso cheC (0001) chakakodzera kukura makristasi e4H-SiC, nepo Si (0001) chiso chinoshandiswa pakukura 6H-SiC makristasi.
3. Kushandisa Off-Axis Mbeu Makristasi: Off-axis mhodzi makristasi anogona kushandura symmetry yekukura kwekristaro, kuderedza kukanganisa mukristaro.
4. Yemhando yepamusoro Mbeu Crystal Bonding process.
5. Kuchengetedza Kugadzikana kweCrystal Kukura Kwekubatanidza Panguva Yekukura Kwekutenderera.

Makiyi Tekinoroji eSilicon Carbide Crystal Kukura

1. Doping Technology yeSilicon Carbide Powder
   Doping iyo silicon carbide poda ine huwandu hwakakodzera hweCe inogona kudzikamisa kukura kwe4H-SiC imwe chete makristasi. Mhedzisiro inoshanda inoratidza kuti Ce doping inogona:

• Wedzera mwero wekukura kwesilicon carbide makristasi.
• Dzora kutaridzika kwekristaro kukura, zvichiita kuti ive yakafanana uye yenguva dzose.
• Dzvinyirira kuumbwa kwekusachena, kuderedza kukanganisa uye kufambisa kugadzirwa kwekristaro imwe chete uye yepamusoro-soro.
• Inhibit backside corrosion of the crystal uye uvandudze goho rimwechete-crystal.

• Axial uye Radial Temperature Gradient Kudzora Technology
  Iyo axial tembiricha gradient inonyanya kukanganisa mhando yekukura kwekristaro uye kugona. Iyo yakanyanya kudiki tembiricha gradient inogona kutungamirira ku polycrystalline kuumbwa uye kuderedza kukura kwekukura. Yakakodzera axial uye radial tembiricha gradients inofambisa nekukurumidza SiC crystal kukura uku ichichengetedza yakagadzikana yekristaro mhando.
• Basal Plane Dislocation (BPD) Kudzora Technology
  BPD hurema hunonyanya kumuka kana shear stress mukristaro ichidarika iyo yakakosha shear stress yeSiC, activating slip systems. Sezvo BPDs dziri perpendicular kune kristaro kukura kutungamira, ivo vanonyanya kuumba panguva yekristaro kukura uye kutonhora.
• Vapor Phase Composition Ratio Adjustment Technology
  Kuwedzera iyo kabhoni-ku-silicon muyero munharaunda yekukura ndiyo nhanho inoshanda yekudzikamisa imwe-kristaro kukura. Iyo yakakwira kabhoni-kune-silicon reshiyo inoderedza yakakura nhanho bunching, inochengetedza mhodzi yekristaro yekukura ruzivo, uye inodzvanya polytype kuumbwa.
• Low-Stress Control Technology
  Kushushikana panguva yekukura kwekristaro kunogona kukonzera kukotama kwendege dzekristaro, zvichitungamira kune hurombo hwekristaro kunaka kana kuputika. Kushushikana kwakanyanya kunowedzera basal plane dislocation, izvo zvinogona kukanganisa epitaxial layer kunaka uye kuita kwechishandiso.

6-inch SiC wafer yekuongorora mufananidzo

Nzira dzekuderedza Kushushikana muKrismesi:

• Rongedza tembiricha yekugovera munda uye maitiro maparamendi kuti agonese pedyo-yakaenzana kukura kweSiC imwe makristasi.
• Gadzirisa iyo crucible chimiro kuti ubvumire yemahara kristaro kukura nezvidiki zvinomanikidza.
• Shandura nzira dzekugadzirisa mhodzi dzekristaro kuderedza kupisa kwekuwedzera kusawirirana pakati pemhodzi yekristaro negirafu inobata. Nzira yakajairika ndeyekusiya 2 mm gap pakati pekristaro yembeu uye graphite inobata.
• Vandudza maitiro ekuvharisa nekushandisa in-situ choto annealing, kugadzirisa annealing tembiricha uye nguva yekuburitsa zvizere kushushikana kwemukati.

Ramangwana Trends muSilicon Carbide Crystal Kukura Technology

Kutarisa kumberi, yemhando yepamusoro SiC single crystal yekugadzirira tekinoroji inovandudza mune inotevera nzira:

1. Kukura-Kukura-Kukura
   Iyo dhayamita yesilicon carbide makristasi imwe chete yakashanduka kubva pamamirimita mashoma kusvika pa6-inch, 8-inch, uye kunyange akakura 12-inch saizi. Yakakura-diameter SiC makristasi anovandudza kugadzirwa kwekugadzira, kuderedza mitengo, uye kusangana nezvinodiwa zvemagetsi-ane simba.
2. Kukura Kwemhando yepamusoro
   Yepamusoro-mhando SiC makristasi akakosha kune yakakwirira-inoshanda michina. Kunyangwe kufambira mberi kwakakosha kwaitwa, kuremara kwakadai semakropipe, kutsemuka, uye tsvina zvichiripo, zvichikanganisa kuita kwechigadzirwa uye kuvimbika.
3. Kuderedza Mutengo
   Mutengo wepamusoro weSiC crystal kugadzirira unodzikamisa kushandiswa kwayo mune mamwe minda. Kugadzirisa maitiro ekukura, kuvandudza hunyanzvi hwekugadzira, uye kudzikisa mitengo yezvigadzirwa zvinogona kubatsira kuderedza mari yekugadzira.
4. Kukura Kwenjere
   Nekufambira mberi muAI uye data hombe, SiC crystal yekukura tekinoroji ichawedzera kutora hungwaru mhinduro. Chaiyo-nguva yekutarisa uye kutonga uchishandisa masensa uye otomatiki masisitimu anosimudzira kugadzikana kwemaitiro uye kudzoreka. Pamusoro pezvo, hombe data analytics inogona kukwirisa ma paramita ekukura, kuvandudza mhando yekristaro uye kugona kugadzira.

Yepamusoro-mhando silicon carbide imwe kristaro yekugadzirira tekinoroji ndiyo yakakosha kutarisisa mu semiconductor zvinhu zvekutsvaga. Sezvo tekinoroji ichifambira mberi, SiC crystal yekukura matekiniki icharamba ichishanduka, ichipa hwaro hwakasimba hwemashandisirwo mune yakakwirira-tembiricha, yakakwirira-frequency, uye yakakwirira-simba minda.