Nzira huru dzekugadzira silicon single crystal dzinosanganisira: Kutakura Vapor (PVT), Kukura Kwemhinduro Yakacheneswa Pamusoro (TSSG), uye High-Temperature Chemical Vapor Deposition (HT-CVD). Pakati peizvi, nzira yePVT inoshandiswa zvakanyanya mukugadzirwa kwemaindasitiri nekuda kwemidziyo yayo iri nyore, nyore kudzora, uye mitengo yakaderera yemidziyo nekushanda.
Pfungwa Huru dzeUnyanzvi dzeKukura kwePVT kweSilicon Carbide Crystals
Pakurima makristaro esilicon carbide uchishandisa nzira yePhysical Vapor Transport (PVT), zvinhu zvinotevera zvehunyanzvi zvinofanirwa kutariswa:
- Kuchena kweGraphite muGrowth Chamber: Hunhu hwekusachena muzvikamu zvegraphite hunofanira kunge huri pasi pe5×10⁻⁶, nepo hunhu hwekusachena muinsulation felt hunofanira kunge huri pasi pe10×10⁻⁶. Zvinhu zvakaita seB neAl zvinofanirwa kuchengetwa pasi pe0.1×10⁻⁶.
- Kusarudzwa Kwakarurama kweCrystal Polarity yeMbeu: Zvidzidzo zveEmpirical zvinoratidza kuti chiso cheC (0001) chakakodzera kurima makristaro e4H-SiC, nepo chiso cheSi (0001) chichishandiswa kurima makristaro e6H-SiC.
- Kushandisa Makristaro Embeu Dzisina Kurongeka: Makristaro embeu dzisina kurongeka anogona kuchinja kuenzana kwekukura kwekristaro, zvichideredza zvikanganiso mukristaro.
- Maitiro Ekubatanidza Mbeu Nemakristaro Emhando Yepamusoro.
- Kuchengetedza Kugadzikana kweCrystal Growth Interface Munguva yeKukura.
Matekinoroji Akakosha Ekukura kweSilicon Carbide Crystal
- Tekinoroji yeDoping yeSilicon Carbide Powder
Kuisa Ce muupfu hwesilicon carbide nechiyero chakakodzera kunogona kudzikamisa kukura kwemakristaro e4H-SiC. Mhedzisiro inoshanda inoratidza kuti Ce doping inogona:
- Wedzera mwero wekukura kwemakristaro esilicon carbide.
- Dzora nzira yekukura kwekristaro, zvichiita kuti ive yakafanana uye yakajairika.
- Dzivisa kuumbwa kwetsvina, kuderedza zvikanganiso uye kufambisa kugadzirwa kwemakristaro emhando yepamusoro neakagadzirwa nekristaro imwe chete.
- Dzivisai ngura yekristaro kumashure uye wedzerai goho rekristaro rimwe chete.
- Tekinoroji yekudzora gradient yeAxial uye Radial Temperature
Kukwira kwekushisa kweaxial kunonyanya kukanganisa rudzi rwekukura kwekristaro uye kushanda zvakanaka. Kukwira kwekushisa kudiki zvakanyanya kunogona kutungamira pakuumbwa kwepolycrystalline uye kuderedza mwero wekukura. Kukwira kwekushisa kweaxial neradial kwakakodzera kunoita kuti kukura kwekristaro yeSiC kukurumidze uku uchichengetedza hunhu hwekristaro hwakagadzikana. - Tekinoroji Yekudzora Kubviswa Kwendege Yepasi (BPD)
Zvikanganiso zveBPD zvinonyanya kuitika kana shear stress iri mukristaro ikapfuura critical shear stress yeSiC, zvichiita kuti slip systems dzishande. Sezvo maBPD akatarisana nekwaanoenda crystal growth, anonyanya kuumbwa panguva yekukura kwekristaro uye kutonhora. - Tekinoroji yeKugadzirisa Chiyero cheVapor Phase Composition
Kuwedzera chiyero chekabhoni-ku-silicon munzvimbo yekukura inzira inoshanda yekudzikamisa kukura kwekristaro imwe chete. Chiyero chepamusoro chekabhoni-ku-silicon chinoderedza kubatanidzwa kukuru kwematanho, kuchengetedza ruzivo rwekukura kwekristaro yembeu, uye kunoderedza kuumbwa kwepolytype. - Tekinoroji Yekudzora Kushushikana Kushoma
Kushushikana panguva yekukura kwekristaro kunogona kukonzera kukotama kwemapuranga ekristaro, zvichikonzera kusanaka kwekristaro kana kutotsemuka. Kushushikana kwakanyanya kunowedzerawo kutsemuka kwenzvimbo dzepasi pevhu, izvo zvinogona kukanganisa kunaka kwechikamu cheepitaxial uye mashandiro emudziyo.
Mufananidzo wekutarisa SiC wafer ine masendimita matanhatu
Nzira Dzekuderedza Kushushikana Mumakristaro:
- Gadzirisa kugoverwa kwenzvimbo yekupisa uye ma process parameters kuti zviite kuti kukura kwemakristaro eSiC single crystals kuenderane nekukura.
- Gadzirisa chimiro che crucible kuti chibvumire kukura kwekristaro pasina zvipingamupinyi zvakawanda.
- Gadzirisa nzira dzekugadzirisa kristalo yembeu kuti uderedze kusawirirana kwekuwedzera kwekupisa pakati pekristaro yembeu nechibatiso chegirafiti. Nzira yakajairika ndeyekusiya mukaha we 2 mm pakati pekristaro yembeu nechibatiso chegirafiti.
- Vandudza maitiro ekunamira nekushandisa kunamira muchoto, kugadzirisa tembiricha uye nguva yekunamira kuti ubvise kushushikana kwemukati.
Mafambiro Emangwana muSilicon Carbide Crystal Growth Technology
Tichitarisa mberi, tekinoroji yepamusoro yekugadzirira SiC single crystal ichakura nenzira dzinotevera:
- Kukura Kwekukura Kwakakura
Upamhi hwemakristaro esilicon carbide single hwakashanduka kubva pamamirimita mashoma kusvika pahukuru hwemainji matanhatu, 8, uye hwakakura kupfuura inji gumi nemaviri. Makristaro eSiC ane dhayamita hombe anovandudza kushanda zvakanaka kwekugadzira, anoderedza mitengo, uye anogutsa zvinodiwa nemidziyo ine simba guru. - Kukura Kwemhando Yepamusoro
Makristaro emhando yepamusoro eSiC akakosha pamidziyo inoshanda zvakanaka. Kunyangwe paine kufambira mberi kukuru kwakaitwa, zvikanganiso zvakaita sema micropipes, dislocations, uye tsvina zvichiripo, zvichikanganisa mashandiro emidziyo uye kuvimbika kwayo. - Kuderedza Mutengo
Mutengo wakakwira wekugadzirira SiC crystal unoderedza kushandiswa kwayo mune dzimwe nzvimbo. Kugadzirisa maitiro ekukura, kuvandudza mashandiro ekugadzira, uye kuderedza mitengo yezvinhu zvakagadzirwa zvinogona kubatsira kuderedza mari yekugadzira. - Kukura Kwakangwara
Nekufambira mberi muAI nedata guru, tekinoroji yekukura kweSiC crystal icharamba ichishandisa mhinduro dzakangwara. Kutarisa nekudzora panguva chaiyo uchishandisa masensa uye masisitimu otomatiki kuchawedzera kugadzikana kwemaitiro uye kudzora. Pamusoro pezvo, big data analytics inogona kugadzirisa maparamita ekukura, kuvandudza mhando yekristalo uye kushanda zvakanaka kwekugadzira.
Tekinoroji yekugadzirira silicon carbide single crystal yemhando yepamusoro ndiyo inonyanya kutariswa mukutsvaga zvinhu zve semiconductor. Sezvo tekinoroji ichifambira mberi, matekiniki ekukura kweSiC crystal acharamba achichinja, zvichipa hwaro hwakasimba hwekushandiswa munzvimbo dzinopisa zvakanyanya, dzinogara dzichishandiswa kakawanda, uye dzine simba rakawanda.
Nguva yekutumira: Chikunguru-25-2025
