Nhanganyaya kune silicon carbide
Silicon carbide (SiC) isanganiswa semiconductor zvinhu inoumbwa nekabhoni nesilicon, inova imwe yezvakakodzera zvekugadzira tembiricha yepamusoro, yakakwirira frequency, yakakwirira simba uye yakakwirira voltage zvishandiso. Kuenzaniswa neyechinyakare silicon zvinhu (Si), iro bhendi gap resilicon carbide rakapetwa katatu iro resilicon. The thermal conductivity ndeye 4-5 nguva yesilicon; Kuparara kwemagetsi ndeye 8-10 nguva yesilicon; Iyo yemagetsi saturation drift rate ndeye 2-3 nguva yesilicon, iyo inosangana nezvinodiwa zvemazuva ano indasitiri yesimba rakakura, high voltage uye yakakwirira frequency. Inonyanya kushandiswa pakugadzirwa kwepamusoro-soro, high-frequency, high-simba uye chiedza-emitting electronic components. Minda yekunyorera yakadzika inosanganisira smart grid, mota nyowani dzemagetsi, photovoltaic mhepo simba, 5G kutaurirana, etc. Silicon carbide diodes uye MOSFETs dzakashandiswa kutengeserana.
High tembiricha kuramba. Iyo bhendi gap hupamhi hwesilicon carbide ndeye 2-3 nguva yesilicon, maerekitironi haasi nyore kuchinjika pakudziya kwakanyanya, uye anogona kumira tembiricha yepamusoro yekushandisa, uye thermal conductivity yesilicon carbide ndeye 4-5 nguva yesilicon. kuita kuti mudziyo kupisa dissipation nyore uye muganhu kushanda tembiricha yakakwirira. Iyo yakanyanya tembiricha kuramba inogona kuwedzera zvakanyanya simba density uku ichidzikisa zvinodiwa pane inotonhorera system, ichiita kuti terminal ireruke uye idiki.
Kumirisana ne high pressure. Kusimba kwesimba remagetsi esilicon carbide kakapetwa ka10 kune yesilicon, iyo inokwanisa kumirisana nemagetsi epamusoro uye inokodzera zvakanyanya kumagetsi emagetsi.
High frequency resistance. Silicon carbide ine saturated electron Drift rate yakapetwa kaviri iyo yesilicon, zvichikonzera kusavapo kwekuswededza kwazvino panguva yekuvharwa, iyo inogona kunyatso vandudza switching frequency yechishandiso uye kuona miniaturization yechishandiso.
Kupera simba kwakaderera. Kuenzaniswa nesilicon zvinhu, silicon carbide ine yakaderera-kupokana uye yakaderera-kurasikirwa. Panguva imwecheteyo, iyo yakakwira bhendi-gap yakafara yesilicon carbide inoderedza zvakanyanya kudonha kwazvino uye kurasikirwa kwesimba. Mukuwedzera, iyo silicon carbide mudziyo haina ikozvino inoteedzera chiitiko panguva yekuvhara, uye kurasikirwa kwekuchinja kwakaderera.
Silicon carbide indasitiri chain
Iyo inonyanya kusanganisira substrate, epitaxy, dhizaini yedhizaini, kugadzira, kuisa chisimbiso uye zvichingodaro. Silicon carbide kubva kuzvinhu kuenda kune semiconductor simba mudziyo inowana imwechete crystal kukura, ingot slicing, epitaxial kukura, wafer dhizaini, kugadzira, kurongedza uye mamwe maitiro. Mushure mekugadzirwa kwesilicon carbide poda, iyo silicon carbide ingot inogadzirwa kutanga, uye ipapo iyo silicon carbide substrate inowanikwa nekucheka, kukuya nekupukuta, uye iyo epitaxial sheet inowanikwa ne epitaxial kukura. Iyo epitaxial wafer inogadzirwa nesilicon carbide kuburikidza ne lithography, etching, ion implantation, simbi passivation uye mamwe maitiro, iyo wafer inochekwa kuita kufa, mudziyo unoputirwa, uye mudziyo unosanganiswa kuita yakakosha shell uye inounganidzwa mune module.
Kumusoro kweiyo indasitiri ketani 1: substrate - crystal kukura ndiyo yakakosha process link
Silicon carbide substrate accounts inosvika makumi mana nenomwe muzana yemutengo wesilicon carbide zvishandiso, iyo yepamusoro yekugadzira zvipingamupinyi zvehunyanzvi, kukosha kukuru, ndiyo musimboti weramangwana rakakura-maindasitiri eSiC.
Kubva pakuona kwe electrochemical property musiyano, silicon carbide substrate zvinhu zvinogona kukamurwa kuita conductive substrates (resistivity region 15~30mΩ·cm) uye semi-insulated substrates (resistivity yakakwirira kupfuura 105Ω·cm). Aya marudzi maviri emasubstrates anoshandiswa kugadzira disitere zvishandiso semagetsi emagetsi neredhiyo frequency zvishandiso zvakateerana mushure mekukura epitaxial. Pakati pavo, semi-insulated silicon carbide substrate inonyanya kushandiswa mukugadzira gallium nitride RF zvishandiso, photoelectric zvishandiso uye zvichingodaro. Nekukura gan epitaxial layer pane semi-insulated SIC substrate, iyo sic epitaxial ndiro inogadzirwa, inogona kugadziridzwa zvakare muHEMT gan iso-nitride RF zvishandiso. Conductive silicon carbide substrate inonyanya kushandiswa mukugadzira magetsi emagetsi. Yakasiyana neyechinyakare silicon simba rekugadzira mudziyo, iyo silicon carbide simba mudziyo haigone kugadzirwa zvakananga pasilicon carbide substrate, iyo silicon carbide epitaxial layer inoda kukura pane conductive substrate kuti iwane silicon carbide epitaxial sheet, uye epitaxial. layer inogadzirwa paSchottky diode, MOSFET, IGBT uye mamwe magetsi emagetsi.
Silicon carbide poda yakagadziridzwa kubva pakuchena kwekabhoni poda uye yakakwira kuchena silicon poda, uye saizi dzakasiyana dzesilicon carbide ingot dzakarimwa pasi penzvimbo yakakosha yekupisa, uyezve silicon carbide substrate yakagadzirwa kuburikidza nemaitiro akawanda ekugadzirisa. Iyo core process inosanganisira:
Raw material synthesis: Iyo yakakwirira-kuchena silicon poda + toner inosanganiswa zvichienderana nefomati, uye maitiro anoitwa mukamuri yekupindura pasi peyakanyanya tembiricha iri pamusoro pe2000 ° C kugadzira silicon carbide zvidimbu zvine chaiyo crystal mhando uye chidimbu. saizi. Zvino kuburikidza nekupwanya, kuongorora, kuchenesa uye mamwe maitiro, kusangana nezvinodiwa zvekuchena kwesilicon carbide poda zviwanikwa.
Kukura kweCrystal ndiyo musimboti wekuita kwesilicon carbide substrate kugadzira, iyo inosarudza magetsi emagetsi esilicon carbide substrate. Parizvino, nzira huru dzekukura kwekristaro ndeyemuviri mhute kutamiswa (PVT), yakanyanya tembiricha kemikari vapor deposition (HT-CVD) uye liquid phase epitaxy (LPE). Pakati pavo, nzira yePVT ndiyo nzira huru yekukura kwekutengesa kweSiC substrate parizvino, ine hunyanzvi hwekukura uye inonyanya kushandiswa muinjiniya.
Kugadzirira kweSiC substrate kwakaoma, kunotungamirira kumutengo wayo wepamusoro
Tembiricha yekudzora munda yakaoma: Si crystal rod kukura kunongoda 1500 ℃, nepo SiC crystal rod inoda kurimwa patembiricha yepamusoro inopfuura 2000 ℃, uye kune anopfuura 250 SiC isomers, asi iyo huru 4H-SiC single crystal chimiro che. kugadzirwa kwemagetsi emagetsi, kana kusiri kutonga chaiko, kuchawana zvimwe zvimiro zvekristaro. Uye zvakare, iyo tembiricha gradient mucrucible inotaridza mwero weSiC sublimation kutamiswa uye kurongeka uye kukura maitiro emaatomu egasi pane yekristaro interface, inokanganisa chiyero chekukura kwekristaro uye mhando yekristaro, saka zvinodikanwa kuti ugadzire yakarongeka tembiricha munda. control tekinoroji. Kuenzaniswa neSi zvinhu, mutsauko mukugadzirwa kweSiC uri zvakare mune yakakwira tembiricha maitiro senge yakakwira tembiricha ion kuisirwa, yakanyanya tembiricha oxidation, yakanyanya tembiricha activation, uye yakaoma mask process inodiwa neaya maitiro ekushisa.
Slow crystal kukura: kukura kweSi crystal rod inogona kusvika 30 ~ 150mm / h, uye kugadzirwa kwe1-3m silicon crystal rod inongotora zuva rimwe chete; SiC crystal rod ine nzira yePVT semuenzaniso, chiyero chekukura chinenge 0.2-0.4mm / h, mazuva manomwe kuti akure pasi pe3-6cm, chiyero chekukura chiri pasi pe1% yesilicon zvinhu, simba rekugadzira rakanyanyisa. limited.
High product parameters uye goho rakaderera: iyo core parameters yeSiC substrate inosanganisira microtubule density, dislocation density, resistivity, warpage, surface roughness, etc. Iyo yakaoma system engineering kuronga maatomu mukamuri yakavharwa yepamusoro-tembiricha uye yakazara crystal kukura, uchidzora parameter indexes.
Nyaya yacho ine kuoma kwepamusoro, brittleness yakareba, nguva yakareba yekucheka uye kupfeka kwepamusoro: SiC Mohs kuoma kwe9.25 ndeyechipiri kune diamond chete, izvo zvinotungamirira kukuwedzera kukuru kwekuoma kwekucheka, kugaya nekupukuta, uye zvinotora anenge maawa 120 cheka 35-40 zvidimbu zve 3cm gobvu ingot. Uye zvakare, nekuda kweiyo yakanyanya brittleness yeSiC, wafer kugadzirisa kupfeka kuchave kwakawanda, uye reshiyo yekubuda ingangoita 60%.
Mafambiro ebudiriro: Kuwedzera saizi + kuderera kwemutengo
Musika wepasi rose weSiC 6-inch vhoriyamu yekugadzira mutsara uri kukura, uye makambani anotungamira apinda mumusika we8-inch. Mapurojekiti ekusimudzira mudzimba anonyanya kuita 6 inches. Parizvino, kunyangwe makambani mazhinji epamba achiri akavakirwa pamitsara yekugadzira 4-inch, asi indasitiri iri kuwedzera zvishoma nezvishoma kusvika 6-inch, nekukura kwe6-inch inotsigira tekinoroji yemidziyo, yepamba SiC substrate tekinoroji iri kuwedzera zvishoma nezvishoma hupfumi hwenyika. chiyero chemitsetse yakakura yekugadzira mitsara icharatidzwa, uye yazvino yepamba 6-inch misa yekugadzira nguva gap yakadzikira kusvika kumakore manomwe. Iyo yakakura saizi yewafer inogona kuunza kuwedzera kwehuwandu hwemachipisi, kunatsiridza mwero wegoho, uye kuderedza chikamu cheedge chips, uye mutengo wekutsvagisa nekusimudzira uye kurasikirwa kwegoho uchachengetwa unosvika 7%, nekudaro kuvandudza wafer. kushandiswa.
Pachine matambudziko akawanda mukugadzira mudziyo
Kutengeswa kweSiC diode kunovandudzwa zvishoma nezvishoma, parizvino, vagadziri vedzimba vanoverengeka vakagadzira zvigadzirwa zveSiC SBD, zvepakati nepamusoro voltage SiC SBD zvigadzirwa zvine kugadzikana kwakanaka, mumotokari OBC, kushandiswa kweSiC SBD + SI IGBT kuwana yakagadzikana. ikozvino density. Parizvino, hapana zvipingamupinyi mukugadzira patent yeSiC SBD zvigadzirwa muChina, uye gaka nenyika dzekunze idiki.
SiC MOS ichine matambudziko mazhinji, pachine mukaha pakati peSiC MOS nevagadziri vekunze, uye chikuva chakakodzera chekugadzira chichiri kuvakwa. Parizvino, ST, Infineon, Rohm uye imwe 600-1700V SiC MOS yakawana kugadzirwa kwakawanda uye yakasainwa uye kutumirwa nemaindasitiri mazhinji ekugadzira, nepo dhizaini yazvino yeSiC MOS dhizaini yakapedzwa, vazhinji vevagadziri vekugadzira vari kushanda nemachira pa. iyo wafer inoyerera nhanho, uye gare gare kuoneswa kwevatengi kuchiri kuda imwe nguva, saka kuchine nguva yakareba kubva kune yakakura-chiyero kushambadzira.
Parizvino, iyo planar dhizaini ndiyo yakasarudzika sarudzo, uye mhando yemugero inoshandiswa zvakanyanya mumunda wekudzvanya kwepamusoro mune ramangwana. Planar structure SiC MOS vagadziri vakawanda, iyo planar chimiro haisi nyore kuburitsa matambudziko ekuparara kwenzvimbo kana ichienzaniswa negorovha, inokanganisa kugadzikana kwebasa, mumusika uri pazasi 1200V ine huwandu hwakasiyana hwekushandisa kukosha, uye iyo planar chimiro chakaenzana. nyore mukugadzira magumo, kusangana manufacturability uye mutengo kudzora zvinhu zviviri. Iyo groove mudziyo ine zvakanakira zvakanyanyisa kuderera parasitic inductance, kukurumidza kushandura kumhanya, kurasikirwa kwakaderera uye kuita kwakanyanya.
2--SiC wafer nhau
Silicon carbide musika kugadzirwa uye kukura kwekutengesa, teerera kune kusaenzana kwechimiro pakati pekupa uye kudiwa
Nekukurumidza kukura kwemusika kudiwa kweakakwira-frequency uye yakakwirira-simba magetsi emagetsi, iyo yemuviri muganhu bhodhoro resilicon-based semiconductor zvishandiso zvishoma nezvishoma zvave mukurumbira, uye yechitatu-chizvarwa semiconductor zvinhu zvinomiririrwa nesilicon carbide (SiC) zvishoma nezvishoma. kuva maindasitiri. Kubva pakuona kwezvinhu, silicon carbide ine 3 times the band gap width yesilicon material, 10 times the critical breakdown electric field simba, 3 times the thermal conductivity, saka silicon carbide magetsi maturusi akakodzera kukwirisa frequency, high pressure, tembiricha yepamusoro uye mamwe maapplication, anobatsira kuvandudza kushanda uye simba density yemagetsi emagetsi masisitimu.
Parizvino, maSiC diodes uye SiC MOSFETs zvishoma nezvishoma akatamira kumusika, uye kune zvimwe zvigadzirwa zvakakura, pakati peiyo maSiC diode anoshandiswa zvakanyanya panzvimbo yesilicon-based diode mune mamwe minda nekuti ivo havana mukana wekudzosera kudzoreredza kubhadharisa; SiC MOSFET inoshandiswawo zvishoma nezvishoma mumotokari, kuchengetedza simba, murwi wekuchaja, photovoltaic nemamwe minda; Mundima yekushandiswa kwemotokari, maitiro emodularization ari kuramba achiwedzera mukurumbira, kuita kwepamusoro kweSiC kunofanirwa kuvimba nematanho epamberi ekurongedza kuti awane, nehunyanzvi neyakakura kuvharika kwegomba seyakanyanya, ramangwana kana kusimudzira kwepurasitiki yekuisa chisimbiso. , maitiro ayo akagadziridzwa ekuvandudza anonyanya kukodzera SiC modules.
Silicon carbide mutengo unodzikira kumhanya kana kupfuura fungidziro
Kushandiswa kwesilicon carbide madivayiri kunonyanya kuganhurirwa nemutengo wakakwira, mutengo weSiC MOSFET pasi peyero yakafanana wakapetwa ka4 pane weSi based IGBT, izvi zvinodaro nekuti maitiro esilicon carbide yakaoma, umo kukura kwe. crystal imwe chete uye epitaxial haingori hutsinye pane zvakatipoteredza, asiwo chiyero chekukura chinononoka, uye iyo imwe chete crystal processing mu substrate inofanira kupinda kuburikidza nekucheka uye kupenya. Zvichienderana nehunhu hwayo hwezvinhu uye immature process tekinoroji, goho remumba substrate iri pasi pe50%, uye zvinhu zvakasiyana zvinotungamira kune yakakwira substrate uye epitaxial mitengo.
Nekudaro, mutengo wekuumbwa kwesilicon carbide zvishandiso uye silicon-based zvishandiso zvakapesana, iyo substrate uye epitaxial mutengo weiyo chiteshi chemberi account ye47% uye 23% yechishandiso chose zvichiteerana, inokwana 70%, dhizaini yedhizaini, kugadzira. uye zvisimbiso zvinongedzo zveakaundi yekumashure chiteshi chete 30%, mutengo wekugadzira wesilicon-based zvishandiso unonyanya kutariswa mukugadzira wafer kugadzirwa kweiyo kumashure chiteshi nezve. 50%, uye substrate mutengo maakaunzi chete 7%. Chiitiko chekukosha kwesilicon carbide industry chain upside down inoreva kuti upstream substrate epitaxy vagadziri vane kodzero huru yekutaura, inova kiyi yekurongeka kwemabhizinesi epamba neekunze.
Kubva pakusimba kwekuona pamusika, kuderedza mutengo wesilicon carbide, kuwedzera pakuvandudza silicon carbide refu crystal uye slicing process, ndeyekuwedzera saizi yewafer, iri zvakare nzira yakakura yekusimudzira semiconductor munguva yakapfuura. Wolfspeed data inoratidza kuti iyo silicon carbide substrate inosimudzira kubva pa6 inches kusvika 8 inches, inokwanisa kugadzirwa chip inogona kuwedzera ne80% -90%, uye kubatsira. vandudza goho. Inogona kuderedza mari yakabatanidzwa yeyuniti ne50%.
2023 inozivikanwa se "8-inch SiC gore rekutanga", gore rino, vagadziri vepamba uye vekunze silicon carbide vari kumhanyisa dhizaini ye8-inch silicon carbide, seWolfspeed inopenga yekudyara yemabhiriyoni gumi nemazana mashanu neshanu emadhora ekuAmerica ekuwedzera kugadzirwa kwesilicon carbide, chikamu chakakosha chiri kuvakwa kwe8-inch SiC substrate kugadzira chirimwa, Kuve nechokwadi chekupihwa kweramangwana kwe200 mm SiC isina simbi. kumakambani mazhinji; Domestic Tianyue Advanced naTianke Heda vakasainawo zvibvumirano zvenguva refu neInfineon kuti vape 8-inch silicon carbide substrates mune ramangwana.
Kutanga kubva gore rino, silicon carbide ichakwira kubva pa6 inches kusvika pa8 inches, Wolfspeed inotarisira kuti panosvika 2024, iyo unit chip mutengo we8 inches substrate ichienzaniswa neiyo unit chip mutengo we6 inches substrate muna 2022 ichaderedzwa neinopfuura makumi matanhatu muzana. , uye kuderera kwemutengo kuchawedzera kuvhura musika wekushandisa, Ji Bond Consulting tsvakurudzo data yakaratidza. Ikozvino musika wekugovaniswa wezvigadzirwa zve8-inch uri pasi pe2%, uye chikamu chemusika chinotarisirwa kukura kusvika pagumi neshanu muzana panosvika 2026.
Muchokwadi, chiyero chekuderera mumutengo wesilicon carbide substrate inogona kudarika fungidziro yevanhu vazhinji, ikozvino musika unopihwa we6-inch substrate ndeye 4000-5000 yuan / chidimbu, zvichienzaniswa nekutanga kwegore yadonha zvakanyanya, ndizvo. inotarisirwa kuwira pasi pe4000 yuan gore rinouya, zvakakosha kuziva kuti vamwe vanogadzira kuitira kuti vawane musika wekutanga, vakaderedza mutengo wekutengesa kune mutengo wepazasi, Yakavhurwa. iyo modhi yehondo yemitengo, yakanyanya kuisirwa musilicon carbide substrate supply yave yakaringana mumunda wakaderera-voltage, vagadziri vepamba nevekunze vari kuwedzera zvine hukasha kugona kwekugadzira, kana kurega iyo silicon carbide substrate yakawandisa kupfuura yaifungidzirwa.
Nguva yekutumira: Jan-19-2024