Midziyo yekucheka neLaser Yakanyatsogadzirwa ye8-Inch SiC Wafers: Tekinoroji Yekutanga Yekugadzirisa SiC Wafer Yeramangwana

Silicon carbide (SiC) haisi tekinoroji yakakosha chete pakudzivirira nyika asiwo chinhu chakakosha kumaindasitiri emotokari nemagetsi pasi rose. Sedanho rekutanga rakakosha mukugadzirisa SiC single-crystal, kucheka wafer kunosarudza zvakananga kunaka kwekutetepa nekupukuta kunotevera. Nzira dzechinyakare dzekucheka wafer dzinowanzounza kuputika pamusoro nepasi pevhu, zvichiwedzera mwero wekuputsika kwewafer uye mitengo yekugadzira. Naizvozvo, kudzora kukuvara kwekuputika kwepamusoro kwakakosha pakusimudzira kugadzirwa kwemidziyo yeSiC.

Parizvino, SiC ingot slicing inotarisana nematambudziko maviri makuru:

1. Kurasikirwa kukuru kwezvinhu mukucheka kwetambo dzechinyakare:Kuomarara kwakanyanya kweSiC uye kusasimba kwayo kunoita kuti ive nyore kutsemuka nekutsemuka panguva yekucheka, kukuya, uye kupukuta. Sekureva kweInfineon data, kucheka kwesimbi kwakagadzirwa nedhaimani-resin-bonded multi-wire kwakajairika kunongobatsira chete 50% yekushandiswa kwezvinhu pakucheka, nekurasikirwa kwese kwewafer imwe chete kusvika ~250 μm mushure mekupukuta, zvichisiya zvinhu zvishoma zvisingakwanisike kushandiswa.
2. Kushanda zvishoma uye kutenderera kwenguva refu kwekugadzira:Nhamba dzekugadzirwa kwenyika dzese dzinoratidza kuti kugadzira mawafer zviuru gumi uchishandisa kucheka kwakasimba kwemaawa makumi maviri nemana kunotora mazuva anopfuura mazana maviri nemakumi manomwe nematatu. Nzira iyi inoda michina yakawanda nezvinhu zvinoshandiswa ukuwo ichigadzira kusviba kwakanyanya uye kusvibiswa kwepamusoro (guruva, mvura yakasviba).

Kuti vagadzirise matambudziko aya, timu yaPurofesa Xiu Xiangqian paNanjing University yakagadzira michina yekucheka nelaser yakanyatsogadzirwa yeSiC, ichishandisa tekinoroji yelaser inokurumidza kuderedza zvikanganiso uye kuwedzera kugona kwayo. Kune ingot ye20-mm SiC, tekinoroji iyi inowedzera kaviri kugona kwewafer kana tichienzanisa nekucheka waya kwechinyakare. Pamusoro pezvo, mawafer akachekwa nelaser anoratidza kufanana kwakanyanya, zvichiita kuti ukobvu huderere kusvika 200 μm pawafer imwe neimwe uye kuwedzera kugona kwayo.

Zvakanakira Zvikuru:

• Kuongororwa kwakaitwa patsva pamidziyo mikuru yemuenzaniso, yakasimbiswa kuti icheke mawafer eSiC ane 4-inch semi-insulating uye ma ingots eSiC ane 6-inch conductive.
• Kucheka ingot ye 8-inch kuri kuongororwa.
• Nguva yekucheka michero ipfupi zvikuru, goho regore rakawanda, uye goho repamusoro pe50%.

Substrate yeXKH yeSiC yerudzi rwe4H-N

Mikana yeMusika:

Midziyo iyi yagadzirira kuva mhinduro huru yekucheka ingot yeSiC ine mainch 8, parizvino inotongwa nezvinhu zvinotengeswa kunze kwenyika zvekuJapan zvine mitengo yakakwira uye zvirambidzo zvekutengesera kunze kwenyika. Kudiwa kwemidziyo yekucheka/kucheka nelaser mudzimba kunodarika 1,000, asi hapana mimwe michina yakagadzirwa neChina yakakura iripo. Tekinoroji yeNanjing University ine kukosha kukuru pamusika uye mukana wehupfumi.

Kuenderana kwezvinhu zvakawanda:

Kupfuura SiC, michina iyi inotsigira kugadzirwa kwe gallium nitride (GaN), aluminium oxide (Al₂O₃), uye dhaimani ne laser, zvichiita kuti mashandisirwo ayo emaindasitiri awedzere.

Nekuchinja kushandiswa kweSiC wafer, hunyanzvi uhwu hunogadzirisa matambudziko akakosha mukugadzirwa kwema semiconductor ukuwo huchienderana nemafambiro epasi rose ekushandisa zvinhu zvinoshanda zvakanyanya uye zvinochengetedza simba.

Mhedziso​

Semutungamiri weindasitiri mukugadzira substrate yesilicon carbide (SiC), ​​XKH inyanzvi mukupa 2-12-inch full-size SiC substrates​ (kusanganisira 4H-N/SEMI-type, 4H/6H/3C-type) yakagadzirirwa zvikamu zvakakura zvakaita semotokari itsva dzemagetsi (NEVs), photovoltaic (PV) energy storage, uye 5G communications. Tichishandisa tekinoroji yekucheka zvidimbu zvewafer ine low-loss loss​ uye tekinoroji yekugadzira zvakanyatsonaka​, tawana kugadzirwa kwakawanda kwe8-inch substrates uye budiriro mu12-inch conductive SiC crystal growth technology​, zvichideredza zvakanyanya mitengo ye chips pa unit. Tichienderera mberi, ticharamba tichigadzirisa process dze laser dze ingot-level uye dze intelligent stress​ kuti tisimudzire 12-inch substrate goho kusvika padanho remakwikwi epasi rose, zvichipa simba indasitiri yeSiC yemuno kuti iparadze mamonopolies epasi rose uye kukurumidzisa mashandisirwo anokwanisika munzvimbo dzepamusoro dzakadai semachipisi emotokari uye magetsi eAI server.

Substrate yeXKH yeSiC yerudzi rwe4H-N