Silicon carbide (SiC) haingori tekinoroji yakakosha yekudzivirira yenyika asiwo yakakosha zvinhu zvepasi rose zvemotokari uye simba maindasitiri. Sekutanga nhanho yakakosha muSiC single-crystal processing, wafer slicing inotaridza zvakananga mhando yekutevera kutetepa nekupukuta. Nzira dzechinyakare dzekuchekesa dzinowanzo kuunza kutsemuka kwepasi uye kwepasi, zvichiwedzera mitengo yekupwanya kwewafer uye mutengo wekugadzira. Naizvozvo, kudzora kukuvadzwa kwepasi kwakakosha mukusimudzira SiC mudziyo kugadzira.
Parizvino, SiC ingot slicing inotarisana nematambudziko maviri makuru:
- Kurasikirwa kwezvinhu zvakakwirira mune zvechinyakare multi-waya sawing:Kuomarara kwakanyanya kweSiC uye brittleness inoita kuti ive nyore kuputika uye kutsemuka panguva yekucheka, kukuya, uye kupukuta. Zvinoenderana nedata reInfineon, zvechinyakare kudzoreredza kwedhaimondi-resin-bonded multi-waya sawing inowana chete 50% yekushandiswa kwezvinhu mukucheka, nekurasikirwa kwese-single-wafer kunosvika ~ 250 μm mushure mekupukuta, kuchisiya kushoma kushandiswa.
- Kusashanda zvakanaka uye kutenderera kwenguva refu kwekugadzira:Huwandu hwemagadzirirwo epasi rose hunoratidza kuti kugadzira zviuru gumi zvemawafer uchishandisa 24-awa inoenderera mberi-waya sawing inotora ~ mazuva mazana maviri nemakumi manomwe nematatu. Iyi nzira inoda midziyo yakawanda uye inobatika apo ichigadzira yakakwirira pamusoro roughness uye kusvibiswa (guruva, tsvina).
Kugadzirisa nyaya idzi, timu yaProfessor Xiu Xiangqian kuNanjing University yakagadzira yakakwira-chaiyo laser slicing michina yeSiC, inosimudzira ultrafast laser tekinoroji kuderedza hurema uye kuwedzera goho. Kune 20-mm SiC ingot, tekinoroji iyi inopeta kaviri goho rewafer zvichienzaniswa newaya yechinyakare sawing. Pamusoro pezvo, ma-laser-sliced wafers anoratidza yakakwira geometric kufanana, zvichiita kuti ukobvu huderedze kusvika 200 μm pawafer uye kuwedzera kuwedzera kuburitsa.
Key Advantages:
- Yakapedzwa R&D pamichina mikuru-yakakura prototype, yakatenderwa kuchekwa 4-6-inch semi-insulating SiC wafers uye 6-inch conductive SiC ingots.
- 8-inch ingot slicing iri pasi pekuongororwa.
- Yakanyanya kupfupika slicing nguva, yakakwirira gore negore goho, uye> 50% goho kuvandudzwa.
XKH's SiC substrate yemhando 4H-N
Market Potential:
Midziyo iyi yagadzirira kuve iyo yakakosha mhinduro ye8-inch SiC ingot slicing, parizvino inotongwa neJapan inotengeswa kunze kwenyika ine mutengo wakakura uye zvirambidzo zvekunze. Kudiwa kwemumba kwelaser slicing / kuonda michina inodarika chiuru chemazana, asi hapana akakura maChinese-akagadzirwa dzimwe nzira dziripo. Tekinoroji yeNanjing University inobata hukuru hwemusika uye kugona kwehupfumi.
Multi-Material Kuenderana:
Beyond SiC, michina inotsigira laser processing ye gallium nitride (GaN), aluminium oxide (Al₂O₃), uye dhaimondi, ichiwedzera maindasitiri ayo mashandisirwo.
Nekushandura SiC wafer processing, hunyanzvi uhu hunogadzirisa mabhodhoro akakosha mukugadzira semiconductor uku uchienderana nemaitiro epasirese akanangana nepamusoro-kuita, zvinhu zvinoshandisa simba.
Mhedziso
Semutungamiri weindasitiri musilicon carbide (SiC) substrate kugadzira, XKH inoshanda mukupa 2-12-inch yakazara-saizi SiC substrates (inosanganisira 4H-N/SEMI-mhando, 4H/6H/3C-mhando) yakarongedzwa kune yakakwirira-kukura zvikamu zvakaita semagetsi matsva emagetsi (taic, Vs vol. Tichishandisa hombe-dimension wafer yakaderera-kurasikirwa slicing tekinoroji, uye yakakwirira-chaiyo yekugadzirisa tekinoroji, takawana kugadzirwa kwakawanda kwe8-inch substrates uye kubudirira mu12-inch conductive SiC crystal yekukura tekinoroji, zvichideredza zvakanyanya mutengo we-unit chip. Tichifambira mberi, ticharamba tichiita optimize ingot-level laser slicing, uye hungwaru hwekudzora kushushikana, kusimudza 12-inch substrate goho kusvika kumazinga emakwikwi epasirese, tichipa simba indasitiri yemumba yeSiC kuti iparadze monopolies yepasirese uye nekumhanyisa maapplication akashata munzvimbo dzepamusoro senge mota-giredhi machipisi.
XKH's SiC substrate yemhando 4H-N
Nguva yekutumira: Aug-15-2025