1. Nhanganyaya
Pasinei nemakumi emakore ekutsvaga, heteroepitaxial 3C-SiC inorimwa pa silicon substrates haisati yawana hunhu hwakakwana hwekristaro yekushandisa electronics mumaindasitiri. Kukura kunowanzoitwa pa Si(100) kana Si(111) substrates, imwe neimwe ichipa matambudziko akasiyana: anti-phase domains ye (100) uye cracking ye (111). Kunyange zvazvo mafirimu [111]-oriented achiratidza hunhu hunovimbisa hwakadai sekuderera kwe defect density, kuvandudzwa kwe surface morphology, uye kuderera kwe stress, dzimwe nzira dzakadai se (110) na (211) dzichiri kudzikiswa. Data riripo rinoratidza kuti mamiriro ekukura akakodzera anogona kunge akanangana ne orientation, zvichiita kuti kuferefeta kwakarongeka kuve kwakaoma. Zvinonyanya kukosha, kushandiswa kwe higher-Miller-index Si substrates (semuenzaniso, (311), (510)) ye 3C-SiC heteroepitaxy hakuna kumbobvira kwataurwa, zvichisiya nzvimbo yakakura yekutsvagisa kwekutsvaga nzira dzekukura dzinoenderana ne orientation.
2. Kuedza
Ma layers e3C-SiC akaiswa kuburikidza ne atmospheric-pressure chemical vapor deposition (CVD) achishandisa magasi eSiH4/C3H8/H2 precursor. Ma substrates acho aive 1 cm² Si wafers ane ma directions akasiyana: (100), (111), (110), (211), (311), (331), (510), (553), uye (995). Ma substrates ese aive on-axis kunze kwe (100), uko 2° off-cut wafers dzakaedzwawo. Kuchenesa kwe pre-growth kwaisanganisira ultrasonic degreasing mu methanol. Growth protocol yaisanganisira native oxide removal kuburikidza neH2 annealing pa1000°C, ichiteverwa ne standard two-step process: carburization kwemaminitsi gumi pa1165°C ne 12 sccm C3H8, wozotevera epitaxy kwemaminitsi makumi matanhatu pa1350°C (C/Si ratio = 4) uchishandisa 1.5 sccm SiH4 uye 2 sccm C3H8. Kukura kwega kwega kwaisanganisira nzira dzakasiyana dzeSi ina kusvika shanu, newafer imwe chete (100) yekutarisa.
3. Mhedzisiro neKukurukurirana
Maumbirwo e3C-SiC layers akakurira pamhando dzakasiyana dzeSi substrates (Mufananidzo 1) akaratidza hunhu hwakasiyana hwepamusoro uye kuomarara. Pakuona, sampuro dzakakurira paSi(100), (211), (311), (553), uye (995) dzakaita segirazi, nepo dzimwe dzaitangira pamhando yemukaka ((331), (510)) kusvika padzisina kujeka ((110), (111)). Nzvimbo dzakapfava (dzinoratidza chimiro che microstructure chakanakisisa) dzakawanikwa pa (100)2° off uye (995) substrates. Zvinoshamisa kuti, zvidimbu zvese zvakaramba zvisina kuputika mushure mekutonhora, kusanganisira 3C-SiC(111) inowanzo stresswa. Saizi shoma yesampuro ingave yakadzivirira kuputika, kunyangwe mimwe sampuro yakaratidza kukotama (30-60 μm deflection kubva pakati kuenda kumucheto) inoonekwa pasi pe optical microscopy pa 1000× magnification nekuda kwekuunganidzwa kwekupisa. Matanda akakotama zvakanyanya akakura paSi(111), (211), uye (553) substrates akaratidza maumbirwo akakombama anoratidza kusimba kwekusimba, zvichida basa rekuyedza uye redzidziso kuti rienderane nekutarisa kwekristaro.
Mufananidzo 1 unopfupisa mhedzisiro yeXRD neAFM (kuskena pa20×20 μ m2) ye3C-SC layers yakakurirwa paSi substrates ine marongero akasiyana.
Mifananidzo yeAtomic force microscopy (AFM) (Mufananidzo 2) yakasimbisa kucherechedzwa kwemaziso. Root-mean-square (RMS) values yakasimbisa nzvimbo dzakatsetseka zvakanyanya pa (100)2° off uye (995) substrates, ine maumbirwo akafanana netsanga ane mativi e400-800 nm. Layer (110)-grown layer ndiyo yakanyanya kuomarara, nepo mativi marefu uye/kana akafanana ane miganhu yakapinza dzimwe nguva akaonekwa mune mamwe maerekitironi ((331), (510)). X-ray diffraction (XRD) θ-2θ scans (yakapfupikiswa muTable 1) yakaratidza kubudirira kwe heteroepitaxy kune marekitironi e lower-Miller-index, kunze kweSi(110) iyo yakaratidza 3C-SiC(111) uye (110) peaks zvichiratidza polycrystallinity. Kusanganiswa kweerekitironi uku kwakambotaurwa kare nezveSi(110), kunyangwe zvimwe zvidzidzo zvakaona 3C-SiC-110 yakasarudzika, zvichiratidza kuti kugadzirisa kukura kwemamiriro ekukura kwakakosha. Kune Miller indices ≥5 ((510), (553), (995)), hapana ma XRD peaks akaonekwa mu standard θ-2θ configuration sezvo aya ma high-index planes asiri-diffracting mu geometry iyi. Kusavapo kwema low-index 3C-SiC peaks (semuenzaniso, (111), (200)) kunoratidza kukura kwe single-crystalline, zvichida sample tilting kuti ione diffraction kubva kuma low-index planes.
Mufananidzo wechipiri unoratidza kuverengwa kwekona yendege mukati mechimiro chekristaro cheCFC.
Makona akaverengerwa ekristaro pakati pemapuraneti ane index yepamusoro neakaderera (Tafura 2) akaratidza kusarongeka kukuru (>10°), zvichitsanangura kusavapo kwawo mumaskena akajairwa eθ-2θ. Saka ongororo yePole figure yakaitwa pamuenzaniso we (995)-oriented nekuda kwechimiro chawo chisina kujairika chegranular (zvichida kubva pakukura kwecolumnar kana twinning) uye roughness yakaderera. Manhamba e (111) epole (Mufananidzo 3) kubva kuSi substrate ne3C-SiC layer aive akafanana, achisimbisa kukura kwe epitaxial pasina twinning. Nzvimbo yepakati yakaonekwa pa χ≈15°, ichienderana nekona yedzidziso (111)-(995). Mapopoma matatu akaenzana-akaenzana akaonekwa panzvimbo dzaitarisirwa (χ=56.2°/φ=269.4°, χ=79°/φ=146.7° uye 33.6°), kunyangwe nzvimbo isina kutarisirwa isina simba pa χ=62°/φ=93.3° ichida kuferefetwa kwakawanda. Hunhu hwekristaro, hwakaongororwa kuburikidza nehupamhi hwenzvimbo mu φ-scans, hunoita sehunovimbisa, kunyangwe kuyerwa kwemakona anotenderera kuchidikanwa kuti kuverengerwe huwandu. Nhamba dzemapore emuenzaniso we (510) ne (553) dzichiri kufanira kuzadzikiswa kuti dzisimbise hunhu hwadzo hwe epitaxial.
Mufananidzo 3 unoratidza dhayagiramu yepamusoro yeXRD yakanyorwa pamuenzaniso (995) wakatarisana, unoratidza mapuraneti (111) eSi substrate (a) uye 3C-SiC layer (b).
4. Mhedziso
Kukura kweHeteroepitaxial 3C-SiC kwakabudirira pane akawanda maSi orientation kunze kwe (110), ayo akaburitsa polycrystalline material. Si(100)2° off uye (995) substrates dzakagadzira ma layers akatsetseka (RMS <1 nm), nepo (111), (211), uye (553) dzakaratidza kukotama kwakakosha (30-60 μm). High-index substrates dzinoda advanced XRD characterization (semuenzaniso, pole figures) kusimbisa epitaxy nekuda kwekushaikwa kwe θ-2θ peaks. Basa riri kuenderera mberi rinosanganisira kuyerwa kwe rocking curve, Raman stress analysis, uye kuwedzera kune mamwe ma high-index orientations kuti apedzise chidzidzo ichi chekuongorora.
Semugadziri akabatanidzwa zvakananga, XKH inopa masevhisi ehunyanzvi ekugadzirisa akagadzirwa nehunyanzvi ane portfolio yakazara ye silicon carbide substrates, ichipa mhando dzakajairwa uye dzakasarudzika dzinosanganisira 4H/6H-N, 4H-Semi, 4H/6H-P, uye 3C-SiC, inowanikwa mudhayamita kubva pa 2-inch kusvika 12-inch. Hunyanzvi hwedu hwekupedzisira mukukura kwekristaro, kugadzira machine nemazvo, uye kuvimbisa mhando zvinovimbisa mhinduro dzakagadzirirwa zvemagetsi emagetsi, RF, uye maapplication ari kubuda.
Nguva yekutumira: Nyamavhuvhu-08-2025