Zvinhu zve semiconductor zvakashanduka kuburikidza nezvizvarwa zvitatu zvinochinja:
Chizvarwa chekutanga (Si/Ge) chakaisa hwaro hwezvigadzirwa zvemagetsi zvemazuva ano,
Chizvarwa chechipiri (GaAs/InP) chakapfuura nepakati pezvipingamupinyi zve optoelectronic uye high-frequency kuti chisimbise shanduko yeruzivo,
Chizvarwa chechitatu (SiC/GaN) ikozvino chinogadzirisa matambudziko esimba nezvakatipoteredza zvakanyanya, zvichigonesa kusapindira kwecarbon ne 6G era.
Kufambira mberi uku kunoratidza shanduko kubva pakuchinja-chinja kuenda pakuva nyanzvi mune zvesainzi yezvinhu.
1. MaSemiconductor eChizvarwa Chekutanga: Silicon (Si) neGermanium (Ge)
Nhoroondo Yekare
Muna 1947, Bell Labs yakagadzira transistor yegermanium, ichiratidza kutanga kwenguva yesemiconductor. Pakazosvika makore ekuma1950, silicon yakazotanga kutsiva germanium zvishoma nezvishoma sehwaro hwemacircuits akabatanidzwa (ICs) nekuda kwe stable oxide layer (SiO₂) yayo uye nzvimbo dzayo dzakachengetwa dzechisikigo dzakawanda.
Zvivakwa zveZvinhu
ⅠMukana wekutamba:
Germanium: 0.67eV (bandage yakamanikana, inokurumidza kudonha kwemvura, kushanda zvisina kunaka pakupisa kwakanyanya).
Silicon: 1.12eV (bandgap isina kunanga, yakakodzera ma logic circuits asi haigone kuburitsa chiedza).
Ⅱ,Mabhenefiti eSilicon:
Zvisizvo zvinoumba oxide yepamusoro-soro (SiO₂), zvichiita kuti MOSFET igadzire.
Mutengo wakaderera uye ivhu rakawanda (~28% yezvakaumbwa zveganda).
Ⅲ,Miganhu:
Kufamba kwemaerekitironi kwakaderera (1500 cm²/(V·s) chete), zvichideredza kushanda kwemaerekitironi akawanda.
Kusakwanisa kushivirira magetsi/tembiricha (tembiricha yepamusoro yekushanda ~150°C).
Zvishandiso Zvikuru
Ⅰ,Madunhu Akabatanidzwa (ICs):
MaCPU, machipisi ekurangarira (semuenzaniso, DRAM, NAND) anoshandisa silicon kuti awane huwandu hwakawanda hwekubatanidza.
Muenzaniso: Intel's 4004 (1971), microprocessor yekutanga yekutengeserana, yakashandisa tekinoroji yesilicon ye10μm.
Ⅱ,Zvishandiso zveMagetsi:
Ma thyristors ekutanga uye maMOSFET ane voltage shoma (semuenzaniso, maPC power supplies) aive akagadzirwa nesilicon.
Matambudziko & Kusashanda
Germanium yakabviswa simba nekuda kwekubuda kwemvura uye kusagadzikana kwekupisa. Zvisinei, kushaya simba kwesilicon mu optoelectronics uye mashandisirwo esimba guru kwakakurudzira kugadzirwa kwema semiconductors echizvarwa chinotevera.
2 Semiconductors dzechizvarwa chechipiri: Gallium Arsenide (GaAs) uye Indium Phosphide (InP)
Nhoroondo Yekufambira Mberi
Mumakore ekuma1970-1980, minda mitsva yakaita seyekutaurirana nefoni, network dzefiber dzinopenya, uye tekinoroji yesatellite zvakagadzira kudiwa kukuru kwezvinhu zve optoelectronic zvine frequency yakakwira uye zvinoshanda. Izvi zvakasimudzira kufambira mberi kwema semiconductors akananga ebandgap akadai seGaAs neInP.
Zvivakwa zveZvinhu
Kushanda kweBandgap & Optoelectronic:
GaAs: 1.42eV (yakananga bandgap, inobvumira chiedza kubuda—yakanakira ma lasers/LEDs).
InP: 1.34eV (yakakodzera zvirinani kushandiswa kwemafungu marefu, semuenzaniso, 1550nm fiber-optic communications).
Kufamba kweElectron:
GaAs inosvika 8500 cm²/(V·s), ichipfuura silicon (1500 cm²/(V·s)), zvichiita kuti ive yakanakira kugadzirisa masaini eGHz-range.
Zvakashata
lZvigadziko zvesimbi zvakapfava: Zvakaoma kugadzira kupfuura silicon; mawafer eGaAs anodhura 10× kupfuura.
lHapana oxide yemuno: Kusiyana neSiO₂ yesilicon, GaAs/InP haina ma oxide akagadzikana, zvichitadzisa kugadzirwa kweIC ine density yakakura.
Zvishandiso Zvikuru
lRF Front-Ends:
Ma-amplifiers emagetsi efoni (maPA), ma-transceiver esatellite (semuenzaniso, ma-transistors eHEMT akavakirwa paGaAs).
lZvemagetsi zveOptoelectronics:
Ma diode eLaser (madhiraivha eCD/DVD), ma LED (matsvuku/infrared), ma module efiber-optic (ma InP lasers).
lMasero Ezuva Emuchadenga:
Masero eGaAs anobudirira ne30% (zvichienzaniswa ne ~20% yesilicon), izvo zvakakosha kumasetiraiti.
lZvipingamupinyi zveTekinoroji
Mari yakawanda inodzivirira GaAs/InP kune mashandisirwo emhando yepamusoro, zvichivadzivirira kuti vasatore chinzvimbo chesilicon muma logic chips.
MaSemiconductor eChizvarwa Chechitatu (MaSemiconductor eWide-Bandgap): Silicon Carbide (SiC) neGallium Nitride (GaN)
Vatyairi veTekinoroji
Kuchinja Kwesimba: Mota dzemagetsi nekubatanidza grid remagetsi rinodzokororwa zvinoda michina yemagetsi inoshanda zviri nani.
Zvinodiwa Nehuwandu Hwakawanda: Kutaurirana kwe5G uye masisitimu eradar zvinoda mafrequency akakwira uye huwandu hwesimba.
Nzvimbo Dzakanyanya Kuipa: Mashandisirwo emota dzemuchadenga nedzemumaindasitiri anoda zvinhu zvinokwanisa kutsungirira tembiricha dzinopfuura 200°C.
Hunhu hwezvinhu
Mabhenefiti Akakura eBandgap:
lSiC: Bandgap ye3.26eV, kupwanyika kwesimba remagetsi re10× kupfuura silicon, inokwanisa kutsungirira voltages dzinopfuura 10kV.
lGaN: Bandgap ye3.4eV, kufamba kwemaerekitironi kwe2200 cm²/(V·s), inobudirira mukushanda kwemafrequency akakwira.
Kutarisira Kupisa:
Kufambiswa kweSiC kwekupisa kunosvika 4.9 W/(cm·K), kuri nani katatu pane silicon, zvichiita kuti ive yakakodzera kushandiswa nesimba guru.
Matambudziko Ezvinhu
SiC: Kukura zvishoma nezvishoma kwekristaro imwe chete kunoda tembiricha iri pamusoro pe2000°C, zvichikonzera zvikanganiso zvewafer uye mitengo yakakwira (wafer yeSiC ye 6-inch inodhura 20× kupfuura silicon).
GaN: Haina substrate yechisikigo, inowanzoda heteroepitaxy pasapphire, SiC, kana silicon substrates, zvichikonzera matambudziko ekusawirirana kwelattice.
Zvishandiso Zvikuru
Magetsi Emagetsi:
MaEV inverters (semuenzaniso, Tesla Model 3 inoshandisa SiC MOSFETs, zvichivandudza kushanda zvakanaka ne5–10%).
Nzvimbo dzekuchaja/dzakagadziriswa nekukurumidza (zvishandiso zveGaN zvinogonesa kuchaja nekukurumidza kwe100W+ ukuwo zvichideredza saizi ne50%).
Midziyo yeRF:
Ma amplifiers emagetsi e5G base station (GaN-on-SiC PAs inotsigira ma mmWave frequency).
Radar yemauto (GaN inopa simba re5× reGaAs).
Zvemagetsi zveOptoelectronics:
Ma LED eUV (zvinhu zveAlGaN zvinoshandiswa pakubvisa utachiona uye kuona hunhu hwemvura).
Mamiriro Eindasitiri uye Maonero Eramangwana
SiC ndiyo inonyanya kutengeswa mumusika une simba guru, ine mamota emhando yepamusoro atove kugadzirwa zvakanyanya, kunyange hazvo mitengo ichiri chipingamupinyi.
GaN iri kukura nekukurumidza mumagetsi evatengi (kuchaja nekukurumidza) uye maRF applications, ichichinja ichienda kumawafers e8-inch.
Zvinhu zvinobuda zvakaita se gallium oxide (Ga₂O₃, bandgap 4.8eV) uye dhaimani (5.5eV) zvinogona kuumba "chizvarwa chechina" chema semiconductors, zvichisundira miganhu yemagetsi kupfuura 20kV.
Kugara pamwe chete uye Kubatana kweZvizvarwa zveSemiconductor
Kuzadzisana, Kwete Kutsiva:
Silicon ichiri kutonga muma "logic chips" uye mu "consumer electronics" (95% yemusika wepasi rose we "semiconductor market").
GaAs neInP ndivo vanonyanya kugadzira ma "high-frequency" uye "optoelectronic niches".
SiC/GaN haitsiviwi mukushandiswa kwesimba uye mumaindasitiri.
Mienzaniso yeKubatanidzwa kweTekinoroji:
GaN-on-Si: Inosanganisa GaN nesilicon substrates dzakachipa kuti ikwanise kuchaja nekukurumidza uye kushandiswa kweRF.
SiC-IGBT hybrid modules: Kuvandudza kushanda kwekushandura grid.
Mafambiro Emangwana:
Kubatanidzwa kwakasiyana-siyana: Kusanganisa zvinhu (semuenzaniso, Si + GaN) pane chip imwe chete kuti zvienzane pakushanda uye mutengo.
Zvinhu zvebandgap zvakafara zvikuru (semuenzaniso, Ga₂O₃, dhaimani) zvinogona kugonesa mashandisirwo emagetsi ane simba rakawanda (>20kV) uye quantum computing.
Kugadzirwa kwakabatana
GaAs laser epitaxial wafer ine 4 inch 6 inch
12 inch SIC substrate silicon carbide prime grade dhayamita 300mm saizi hombe 4H-N Yakakodzera kupisa kwemudziyo une simba guru
Nguva yekutumira: Chivabvu-07-2025