Semiconductor zvinhu zvakashanduka kuburikidza nezvizvarwa zvitatu zvinoshandura:
1st Gen (Si/Ge) yakateya hwaro hwemagetsi emazuva ano,
2nd Gen (GaAs/InP) yakatyora zvipingamupinyi zveoptoelectronic uye yakakwira-frequency kuti isimbise shanduko yeruzivo,
3rd Gen (SiC/GaN) ikozvino inobata simba uye zvakanyanya-zvakatipoteredza matambudziko, zvichiita kuti kabhoni kusarerekera uye 6G nguva.
Kufambira mberi uku kunoratidza shanduko yeparadigm kubva mukusiyana-siyana kuenda kuhunyanzvi hwesainzi.
1. First-Generation Semiconductors: Silicon (Si) uye Germanium (Ge)
Historical Background
Muna 1947, Bell Labs yakagadzira germanium transistor, zvichiratidza mambakwedza enguva ye semiconductor. Pakazosvika ma1950s, silicon zvishoma nezvishoma yakatsiva germanium sehwaro hwemaseketi akabatanidzwa (ICs) nekuda kwekugadzikana kwayo oxide layer (SiO₂) uye akawanda ezviwanikwa.
Material Properties
ⅠBandgap:
Germanium: 0.67eV (yakamanikana bandgap, inokurumidza kudonha ikozvino, kushata kwepamusoro-tembiricha kuita).
Silicon: 1.12eV (indirect bandgap, yakakodzera logic circuits asi isingakwanisi kuburitsa chiedza).
Ⅱ,Zvakanakira zveSilicon:
Nomuzvarirwo inoumba yemhando yepamusoro oxide (SiO₂), inogonesa MOSFET kugadzirwa.
Mutengo wakaderera uye nyika-yakawanda (~ 28% yecrustal composition).
Ⅲ,Kuganhurirwa:
Low electron mobility (chete 1500 cm²/(V·s)), inorambidza kuita kwepamusoro-soro.
Weak voltage/temperature tolerance (max operating temp. ~150°C).
Key Applications
Ⅰ,Integrated Circuits (ICs):
CPUs, ndangariro machipisi (semuenzaniso, DRAM, NAND) vanovimba nesilicon kune yakakwira yekubatanidza density.
Muenzaniso: Intel's 4004 (1971), yekutanga yekutengesa microprocessor, yakashandisa 10μm silicon tekinoroji.
Ⅱ,Power Devices:
Ekutanga thyristors uye yakaderera-voltage MOSFETs (semuenzaniso, PC magetsi ekushandisa) aive silicon-yakavakirwa.
Matambudziko & Kusakara
Germanium yakabviswa nekuda kwekudonha uye kusagadzikana kwekupisa. Nekudaro, zvisingakwanisi silicon mune optoelectronics uye yakakwirira-simba mashandisirwo akakurudzira kuvandudzwa kweinotevera-gen semiconductors.
2Second-Generation Semiconductors: Gallium Arsenide (GaAs) uye Indium Phosphide (InP)
Development Background
Munguva ye1970s-1980s, minda iri kusimukira senge nharembozha, optical fiber network, uye satellite tekinoroji yakagadzira kudiwa kwepamusoro-frequency uye inoshanda optoelectronic zvinhu. Izvi zvakafambisa kufambira mberi kweakananga bandgap semiconductors seGaAs uye InP.
Material Properties
Bandgap & Optoelectronic Performance:
GaAs: 1.42eV (yakananga bandgap, inogonesa kubuda kwechiedza-yakanakira lasers/LEDs).
InP: 1.34eV (inonyatsokodzera kushandiswa kwerefu-wavelength, semuenzaniso, 1550nm fiber-optic communications).
Electron Mobility:
GaAs inowana 8500 cm²/(V·s), inopfuura nesilicon (1500 cm²/(V·s)), ichiita kuti ive yakakwana kune GHz-renji masaini kugadzirisa.
Zvakaipa
lBrittle substrates: Zvakaoma kugadzira kupfuura silicon; GaAs wafers inodhura 10 × yakawanda.
lHapana native oxide: Kusiyana nesilicon's SiO₂, GaAs/InP inoshaya maokisisi akatsiga, ichitadzisa yakakwira-density IC kugadzirwa.
Key Applications
lRF Front-Ends:
Mobile simba amplifiers (PAs), satellite transceivers (eg, GaAs-based HEMT transistors).
lOptoelectronics:
Laser diodes (CD/DVD drives), LEDs (tsvuku/infrared), fiber-optic modules (InP lasers).
lSpace Solar Cells:
Masero eGaAs anowana 30% kunyatsoshanda (vs. ~ 20% yesilicon), yakakosha kumasatelliti.
lTekinoroji Bottlenecks
Mitengo yakakwira inovhara maGaAs/InP kune niche yepamusoro-yekupedzisira maapplication, ichivadzivirira kubva pakubvisa hutongi hwesilicon mune logic chips.
Chechitatu-Generation Semiconductors (Wide-Bandgap Semiconductors): Silicon Carbide (SiC) uye Gallium Nitride (GaN)
Technology Drivers
Energy Revolution: Motokari dzemagetsi uye gidhi remagetsi rinogoneka kubatanidzwa zvinoda mamwe magetsi anoshanda.
Yakakwira-Frequency Inodiwa: 5G kutaurirana uye radar masisitimu inoda yakakwirira frequency uye simba density.
Yakanyanya Mamiriro: Aerospace uye maindasitiri emotokari maapplication anoda zvinhu zvinokwanisa kushingirira tembiricha inodarika 200°C.
Material Hunhu
Wide Bandgap Zvakanakira:
lSiC: Bandgap ye3.26eV, kuparara kwesimba remagetsi 10 × iyo yesilicon, inokwanisa kutsungirira voltages pamusoro pe10kV.
lGaN: Bandgap ye3.4eV, electron mobility ye 2200 cm²/(V·s), inobudirira mukushanda kwepamusoro-frequency.
Thermal Management:
SiC's thermal conductivity inosvika 4.9 W/(cm·K), zvakapetwa katatu pane silicon, zvichiita kuti ive yakanaka kune yakakwirira-simba maapplication.
Matambudziko Ezvinhu
SiC: Slow single-crystal kukura kunoda tembiricha iri pamusoro pe2000 ° C, zvichiita kuti wafer defects uye mari yakakwirira (a 6-inch SiC wafer iri 20 × inodhura kupfuura silicon).
GaN: Inoshaya yakasikwa substrate, kazhinji inoda heteroepitaxy pasafire, SiC, kana silicon substrates, zvichiita kuti lattice mismatch nyaya.
Key Applications
Power Electronics:
EV inverters (semuenzaniso, Tesla Model 3 inoshandisa SiC MOSFETs, inovandudza kushanda zvakanaka ne5-10%).
Zviteshi zvinokurumidza kuchaja/adapter (GaN midziyo inogonesa 100W+ kuchaja nekukurumidza uku ichidzikisa saizi ne50%).
RF Devices:
5G base station power amplifiers (GaN-on-SiC PAs inotsigira mmWave frequencies).
Mauto radar (GaN inopa 5 × iyo simba density yeGaAs).
Optoelectronics:
UV LEDs (AlGaN zvinhu zvinoshandiswa mukuita sterilization uye kuona kwemhando yemvura).
Indasitiri Status uye Ramangwana Outlook
SiC inotonga musika-wepamusoro-soro, ine mota-giredhi modules yatove mukugadzirwa kwakawanda, kunyange hazvo mitengo inoramba iri chipingamupinyi.
GaN iri kukurumidza kuwedzera mumagetsi evatengi (kukurumidza kuchaja) uye RF zvikumbiro, ichichinjika yakananga ku8-inch wafers.
Zvishandiso zviri kubuda segallium oxide (Ga₂O₃, bandgap 4.8eV) nedhaimondi (5.5eV) zvinogona kuumba “chizvarwa chechina” chemasemiconductors, ichisundira miganhu yemagetsi kupfuura 20kV.
Kugarisana uye Synergy yeSemiconductor Generations
Kupindirana, Kwete Kutsiviwa:
Silicon inoramba iine masimba mune logic chips uye mutengi zvemagetsi (95% yepasirese semiconductor musika).
MaGaAs uye InP vanonyanya hunyanzvi hwepamusoro-frequency uye optoelectronic niches.
SiC/GaN haidzoreki musimba uye maindasitiri ekushandisa.
Technology Integration Mienzaniso:
GaN-on-Si: Inobatanidza GaN ne-yakaderera-mutengo silicon substrates yekukurumidza kuchaja uye maRF application.
SiC-IGBT hybrid modules: Kuvandudza grid kutendeuka kushanda zvakanaka.
Future Trends:
Heterogeneous kubatanidzwa: Kubatanidza zvinhu (semuenzaniso, Si + GaN) pane imwechete chip kuenzanisa kuita uye mutengo.
Ultra-wide bandgap zvinhu (semuenzaniso, Ga₂O₃, diamond) inogona kugonesa Ultra-high-voltage (>20kV) uye quantum computing application.
Kugadzirwa kwakabatana
GaAs laser epitaxial wafer 4 inch 6 inch
12 inch SIC substrate silicon carbide prime giredhi dhayamita 300mm hombe saizi 4H-N Inokodzera yakakwirira simba mudziyo kupisa kupisa
Nguva yekutumira: May-07-2025