Iyo silicon carbide substrate yakakamurwa kuita semi-insulating mhando uye conductive mhando. Parizvino, iyo yakajairwa yakatarwa yesemi-insulated silicon carbide substrate zvigadzirwa ndeye 4 inches. Mune conductive silicon carbide musika, ikozvino mainstream substrate chigadzirwa chimiro ndeye 6 inches.
Nekuda kwezvishandiso zvakaderera mundima yeRF, semi-insulated SiC substrates uye epitaxial zvinhu zviri pasi pekutonga kunze kwenyika neUS Department of Commerce. Semi-insulated SiC se substrate ndiyo inofarirwa zvinhu zveGaN heteroepitaxy uye ine yakakosha tarisiro yekushandisa mumunda wemicrowave. Kuenzaniswa nekristall mismatch yesafire 14% uye Si 16.9%, kusawirirana kwekristaro kweSiC neGaN zvinhu zvinongori 3.4%. Yakabatana neiyo yekupedzisira-yakakwira yekupisa yekupisa yeSiC, Iyo yakakwirira simba rekushandisa LED uye GaN yakakwirira frequency uye yakakwirira simba microwave zvishandiso zvakagadzirirwa nazvo zvine mabhenefiti makuru mu radar, yakakwirira simba microwave michina uye 5G yekutaurirana masisitimu.
Tsvagiridzo uye kusimudzira kwehafu-yakafukidzwa SiC substrate yagara iri yekutarisa kwekutsvagisa uye kusimudzira kweSiC single crystal substrate. Pane matambudziko maviri makuru mukukura semi-insulated SiC zvinhu:
1) Kuderedza N donor tsvina yakaunzwa negraphite crucible, thermal insulation adsorption uye doping muupfu;
2) Ndichiri kuona kunaka uye magetsi ekristaro, nzvimbo yakadzika nhanho inounzwa kuti itsivise zvakasara zvisina kudzika nhanho nekuita kwemagetsi.
Parizvino, vagadziri vane semi-insulated SiC kugadzirwa kwesimba vanonyanya SICC Co, Semisic Crystal Co, Tanke Blue Co, Hebei Synlight Crystal Co., Ltd.
Iyo conductive SiC crystal inowanikwa nekupinza nitrogen mumhepo inokura. Conductive silicon carbide substrate inonyanya kushandiswa mukugadzira midziyo yemagetsi, silicon carbide midziyo yemagetsi ine yakakwira voltage, yakakwira ikozvino, yakanyanya tembiricha, yakakwira frequency, yakaderera kurasikirwa uye zvimwe zvakasarudzika zvakanakira, ichavandudza zvakanyanya kushandiswa kuripo kwesilicon based power devices energy. kutendeuka kwekugadzirisa, kune zvakakosha uye zvinosvika kure-kure pamunda wekushanda kwesimba rekushandura. Nzvimbo huru dzekushandisa imotokari dzemagetsi / kuchaja mirwi, photovoltaic simba idzva, njanji yekufambisa, smart grid uye zvichingodaro. Nekuti iyo yakadzika yezvigadzirwa zvemagetsi zvinonyanya midziyo yemagetsi mumotokari dzemagetsi, photovoltaic uye mamwe minda, tarisiro yekushandisa yakakura, uye vagadziri vakawanda.
Silicon carbide crystal type: Iyo yakajairika chimiro cheyakanakisa 4H crystalline silicon carbide inogona kukamurwa kuita zvikamu zviviri, imwe ndeye cubic silicon carbide crystal mhando ye sphalerite chimiro, inozivikanwa se 3C-SiC kana β-SiC, uye imwe yacho ine hexagonal. kana chimiro chedhaimani chechimiro chenguva yakakura, iyo yakafanana ne6H-SiC, 4H-sic, 15R-SiC, nezvimwewo, pamwe chete inozivikanwa se α-SiC. 3C-SiC ine mukana wepamusoro resistivity mukugadzira michina. Zvisinei, kusawirirana kwepamusoro pakati peSi neSiC lattice constants uye thermal expansion coefficients inogona kutungamirira kunhamba yakawanda yekuremara mu 3C-SiC epitaxial layer. 4H-SiC ine mukana mukuru mukugadzira maMOSFET, nekuti kukura kwayo kwekristaro uye epitaxial layer yekukura maitiro akanyanya kunaka, uye maererano nekufamba kweelectron, 4H-SiC yakakwirira kupfuura 3C-SiC uye 6H-SiC, inopa zvirinani microwave maitiro e4H. -SiC MOSFETs.
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Nguva yekutumira: Jul-16-2024