Chikamu chesilicon carbide chakakamurwa kuva mhando yesemi-insulation uye mhando yeconductive. Parizvino, specification huru yezvigadzirwa zvesilicon carbide substrate ine semi-insulated i4 inches. Mumusika wesilicon carbide ine conductive, specification yezvigadzirwa zvemainstream substrate parizvino i6 inches.
Nekuda kwekushandiswa kuri kuitwa pasi peRF field, maSiC substrates ane semi-insulated uye epitaxial materials anotongwa neUS Department of Commerce. Semi-insulated SiC se substrate ndiyo inonyanya kushandiswa neGaN heteroepitaxy uye ine mikana yakakosha yekushandisa mu microwave field. Kana tichienzanisa ne crystal mismatch yesafire 14% neSi 16.9%, crystal mismatch yezvinhu zveSiC neGaN i3.4% chete. Pamwe chete ne ultra-high thermal conductivity yeSiC, ma microwave ane simba rakawanda e LED neGaN high frequency uye high power devices akagadzirwa nawo ane mabhenefiti makuru mu radar, high power microwave equipment uye 5G communication systems.
Kutsvaga nekugadzira substrate yeSiC ine semi-insulated kwagara kuri chinhu chinonyanya kukosheswa pakutsvagisa nekugadzira substrate yeSiC imwe chete yekristaro. Pane matambudziko maviri makuru pakurima zvinhu zveSiC zvine semi-insulated:
1) Deredza kusvibiswa kweN donor kunounzwa ne graphite crucible, thermal insulation adsorption uye doping muupfu;
2) Pakunge paine hunhu uye hunhu hwemagetsi hwekristaro, nzvimbo yakadzika inounzwa kuti idzore tsvina yasara yemazinga asina kudzika nekushanda kwemagetsi.
Parizvino, vagadziri vane simba rekugadzira SiC rakapfava zvishoma ndivo SICC Co，Semisic Crystal Co，Tanke Blue Co, Hebei Synlight Crystal Co., Ltd.
Kristaro yeSiC inofambisa magetsi inowanikwa nekupinza nitrogen mumhepo inokura. Substrate yesilicon carbide inofambisa magetsi inonyanya kushandiswa mukugadzira zvishandiso zvemagetsi, zvishandiso zvesilicon carbide zvine voltage yakakwira, current yakakwira, tembiricha yakakwira, frequency yakakwira, kurasikirwa kwakaderera uye zvimwe zvakanakira zvakasiyana, zvichavandudza zvakanyanya kushandiswa kuripo kwemidziyo yemagetsi yakavakirwa pasilicon, zvine simba rakakura uye rakakura pabasa rekushandura simba zvinobudirira. Nzvimbo huru dzekushandisa imotokari dzemagetsi/mapombi ekuchaja, simba idzva rephotovoltaic, transit yechitima, grid yakangwara nezvimwewo. Nekuti pasi pezvigadzirwa zvinofambisa magetsi zvinonyanya kuve zvishandiso zvemagetsi mumotokari dzemagetsi, photovoltaic nedzimwe nzvimbo, mukana wekushandisa wakakura, uye vagadziri vakawanda.
Rudzi rwe silicon carbide crystal: Chimiro chakajairika che 4H crystalline silicon carbide chinogona kukamurwa muzvikamu zviviri, chimwe i silicon carbide crystal type ye sphalerite structure, inozivikanwa se 3C-SiC kana β-SiC, uye chimwe i diamond structure ine hexagonal kana diamond structure ye large period structure, iyo inowanzo shandiswa pa 6H-SiC, 4H-sic, 15R-SiC, nezvimwewo, pamwe chete ichizivikanwa se α-SiC. 3C-SiC ine mukana we high resistivity muzvigadzirwa zvekugadzira. Zvisinei, kusawirirana kwakanyanya pakati pe Si ne SiC lattice constants uye thermal expansion coefficients zvinogona kutungamira kune huwandu hwakawanda hwezvikanganiso mu 3C-SiC epitaxial layer. 4H-SiC ine mukana mukuru mukugadzira maMOSFET, nekuti maitiro ayo ekukura kwekristaro uye epitaxial layer kukura akanaka kwazvo, uye maererano nekufamba kwemaerekitironi, 4H-SiC yakakwira kupfuura 3C-SiC ne6H-SiC, zvichipa hunhu huri nani hwema microwave e4H-SiC MOSFET.
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Nguva yekutumira: Chikunguru-16-2024