Zvigadzirwa zvesimbi zvesilicon carbide (SiC) zvakabuda sezvinhu zvakakosha zvezvikamu zvakakosha mumaindasitiri e semiconductor, aerospace, uye makemikari nekuda kwekuwedzera kwekupisa kwavo, kugadzikana kwemakemikari, uye simba remakanika. Nekuwedzera kwekuda kwemidziyo yesimbi inoshanda zvakanyanya uye isina kusvibiswa zvakanyanya, kuvandudzwa kwetekinoroji dzekugadzirira dzinoshanda uye dzinokwanisa kukura dzezvigadzirwa zvesimbi zveSiC zvakachena kwave chinhu chinonyanya kutsvagwa pasi rose. Pepa iri rinoongorora zvakarongeka nzira dzekugadzirira dzezvigadzirwa zvesimbi zveSiC zvakachena zvakanyanya, zvinosanganisira kudzokorodza kusvina, kusvina kusina kumanikidzwa (PS), kudzvanya kupisa (HP), kusvina plasma (SPS), uye kugadzirwa kwekuwedzera (AM), nekusimbisa kukurukura nzira dzesimbi, maparamendi akakosha, hunhu hwezvinhu, nematambudziko aripo ebasa rega rega.
Kushandiswa kweSiC ceramics muminda yemauto neinjiniya
Parizvino, zvikamu zveSiC ceramic zvine pure zvakanyanya zvinoshandiswa zvakanyanya mukugadzira michina yesilicon wafer, zvichitora chikamu mumabasa makuru akadai se oxidation, lithography, etching, uye ion implantation. Nekufambira mberi kwetekinoroji yewafer, kuwedzera saizi dzewafer kwave tsika yakakosha. Saizi yewafer yakakura parizvino i300 mm, zvichiwana chiyero chakanaka pakati pemutengo uye kugona kwekugadzira. Zvisinei, zvichitungamirirwa neMoore's Law, kugadzirwa kwewafers dze450 mm kwatove pachirongwa. Wafers dzakakura dzinowanzoda simba rakawanda rekuvaka kuti dzisatendere kuchinjika uye kushanduka, zvichiwedzera kudiwa kwezvikamu zveSiC ceramic zvakakura, zvine simba guru, uye zvine pure zvakanyanya. Mumakore achangopfuura, kugadzirwa kwekuwedzera (3D printing), se tekinoroji yekukurumidza yeprototyping isingade molds, yakaratidza kugona kukuru mukugadzira zvikamu zveSiC ceramic zvakaoma nekuda kwekuvakwa kwayo kwelayer-by-layer uye kugona kwayo kugadzira kunochinjika, zvichikwezva kutariswa kwakapararira.
Pepa iri richaongorora zvakarongeka nzira shanu dzekugadzirira SiC ceramics dzakachena zvakanyanya—kudzokorodza kusvina, kusvina pasina kumanikidzwa, kudzvanya kupisa, kusvina plasma, uye kugadzira zvinowedzera—vachitarisa nzira dzavo dzesvina, nzira dzekugadzirisa mashandiro, hunhu hwezvinhu, uye mikana yekushandisa mumaindasitiri.
Zvinodiwa zvezvinhu zvakasvibirwa zvesilicon carbide zvakachena zvakanyanya
I. Kugadziriswazve kweCrystallization
Silicon carbide (RSiC) yakagadzirwazve yakagadzirwa neSiC yakachena kwazvo isina kupiswa inobatsira pakupisa kwakanyanya kwe2100–2500°C. Kubva Fredriksson paakatanga kuona chiitiko chekuvandudzwa kwecrystallization mukupera kwezana remakore rechi19, RSiC yakawana kutariswa kukuru nekuda kwemiganhu yayo yakachena yegorosi uye kusavapo kwemagirazi uye tsvina. Pakupisa kwakanyanya, SiC inoratidza kumanikidzwa kwakanyanya kwemhepo, uye nzira yayo yekupiswa inosanganisira maitiro ekupisa-kunyorova: zvidimbu zvitete zvinopera uye zvinodzoserwa pamusoro pegorosi hombe, zvichikurudzira kukura kwemutsipa uye kubatana zvakananga pakati pegorosi, nokudaro zvichiwedzera simba rezvinhu.
Muna 1990, Kriegesmann akagadzira RSiC ine huwandu hwe79.1% achishandisa slip casting pa2200°C, nechikamu chakasiyana chinoratidza chimiro chidiki chakagadzirwa netsanga dzakakora uye maburi. Zvadaro, Yi nevamwe vake vakashandisa gel casting kugadzirira miviri yakasvibirira uye vakaipisa pa2450°C, vachiwana RSiC ceramics ine huwandu hwakawanda hwe2.53 g/cm³ uye simba reflexural re55.4 MPa.
Nzvimbo yeSEM yakatyoka yeRSiC
Zvichienzaniswa neSiC yakakora, RSiC ine density yakaderera (inenge 2.5 g/cm³) uye inenge 20% open porosity, zvichideredza mashandiro ayo mukushandiswa kwakasimba. Nokudaro, kuvandudza density uye mechanical properties yeRSiC kwave chinhu chikuru chinotsvakurudzwa. Sung nevamwe vake vakakurudzira kupinza silicon yakanyungudutswa mucarbon/β-SiC mixed compacts uye kuigadzirazve pa2200°C, zvichibudirira kuvaka network structure yakagadzirwa neα-SiC coarse grains. RSiC yakabuda yakawana density ye2.7 g/cm³ uye flexural strength ye134 MPa, zvichichengetedza kugadzikana kwakanaka kwe mechanical pakupisa kwakanyanya.
Kuti vawedzere kuwedzera huwandu hwevanhu, Guo nevamwe vake vakashandisa tekinoroji ye polymer infiltration uye pyrolysis (PIP) pakurapa RSiC kakawanda. Vachishandisa mhinduro dzePCS/xylene uye SiC/PCS/xylene slurries sevanopinza, mushure mePIP cycles 3-6, huwandu hweRSiC hwakavandudzwa zvakanyanya (kusvika ku2.90 g/cm³), pamwe chete nesimba rayo reflexural. Pamusoro pezvo, vakapa zano re cyclic strategy inosanganisa PIP ne recrystallization: pyrolysis pa1400°C ichiteverwa ne recrystallization pa2400°C, zvichibvisa zvinobudirira zvivhariso zve particle uye kuderedza porosity. Chinhu chekupedzisira cheRSiC chakawana huwandu hwe2.99 g/cm³ uye simba reflexural re162.3 MPa, zvichiratidza kushanda kwakanaka kwazvo.
Mifananidzo yeSEM yekushanduka kwechimiro cheRSiC chakaposhwa mushure mekutenderera kwepolymer impregnation uye pyrolysis (PIP)-recrystallization: Kutanga kweRSiC (A), mushure mekutenderera kwekutanga kwePIP-recrystallization (B), uye mushure mekutenderera kwechitatu (C)
II. Kupisa Pasina Kumanikidzwa
Zvigadziko zvesimbi zvesilicon carbide (SiC) zvisina kumanikidzwa zvinowanzogadzirwa uchishandisa upfu hweSiC hwakachena zvakanyanya, hwakapfava sezvinhu zvakabikwa, nekuwedzera zvinhu zvinobatsira pakusvina, uye kusvina mumhepo isina kusimba kana vacuum pa1800–2150°C. Nzira iyi yakakodzera kugadzira zvikamu zvesimbi zvakakura uye zvakaoma. Zvisinei, sezvo SiC yakabatana zvakanyanya, chiyero chayo chekuzviparadzanisa chakaderera zvikuru, zvichiita kuti kusvina kuve kwakaoma pasina zvinhu zvinobatsira pakusvina.
Zvichibva panzira yekusvina, sintering isina kumanikidzwa inogona kukamurwa kuita mapoka maviri: sintering isina kumanikidzwa yemvura-chikamu (PLS-SiC) uye sintering isina kumanikidzwa yesolid-state (PSS-SiC).
1.1 PLS-SiC (Kupisa Kwemvura)
PLS-SiC inowanzo pisirwa pasi pe2000°C nekuwedzera inenge 10 wt.% ye eutectic sintering aids (yakadai seAl₂O₃, CaO, MgO, TiO₂, uye rare-earth oxides RE₂O₃) kuti igadzire liquid phase, zvichikurudzira kurongwazve kwezvikamu uye kutamiswa kwemazhinji kuti pave ne densification. Maitiro aya akakodzera maindasitiri eSiC ceramics, asi hapana mishumo yekuti SiC yakanatswa zvakanyanya kuburikidza ne liquid-phase sintering.
1.2 PSS-SiC (Kupisa Kwemamiriro Akasimba)
PSS-SiC inosanganisira densification ye solid-state patembiricha iri pamusoro pe2000°C ine inenge 1 wt.% yezvinowedzera. Maitiro aya anonyanya kutsamira pakupararira kwemaatomu uye kugadziriswa kwezviyo zvinokonzereswa nekupisa kwakanyanya kuderedza simba repamusoro uye kuwana densification. Sisitimu yeBC (boron-carbon) isanganiswa yakajairika yekuwedzera, iyo inogona kuderedza simba remuganhu wezviyo uye kubvisa SiO₂ kubva pamusoro peSiC. Zvisinei, zvinowedzera zveBC zvechinyakare zvinowanzounza tsvina yakasara, zvichideredza kuchena kweSiC.
Nekudzora huwandu hwekuwedzera (B 0.4 wt.%, C 1.8 wt.%) uye kusvina pa2150°C kwemaawa 0.5, ceramics dzeSiC dzakachena zvakanyanya dzine kuchena kwe99.6 wt.% uye huwandu hwe98.4% dzakawanikwa. Chimiro che microstructure chakaratidza zvidimbu zve columnar (zvimwe zvinopfuura 450 µm pakureba), zvine maburi madiki pamiganhu yezviyo uye zvidimbu zve graphite mukati mezviyo. Ceramics dzakaratidza simba re flexural re443 ± 27 MPa, elastic modulus ye420 ± 1 GPa, uye thermal expansion coefficient ye3.84 × 10⁻⁶ K⁻¹ pakati pekupisa kwemukamuri kusvika 600°C, zvichiratidza kushanda kwakanaka kwazvo.
Magadzirirwo ePSS-SiC: (A) Mufananidzo weSEM mushure mekukwesha uye NaOH etching; (BD) Mifananidzo yeBSD mushure mekukwesha uye etching
III. Kupisa Kunodzvanya Sintering
Kudzvanya kwekupisa (HP) inzira yekuwedzera simba iyo inoshandisa kupisa uye kudzvanya kweuniaxial panguva imwe chete pazvinhu zveupfu pasi pemamiriro ekupisa kwakanyanya uye ekumanikidzwa kwakanyanya. Kudzvanya kwakanyanya kunodzivirira zvikuru kuumbwa kwemaburi uye kunoderedza kukura kwezviyo, nepo kupisa kwakanyanya kuchikurudzira kusangana kwezviyo uye kuumbwa kwezvivakwa zvakakora, zvichizopedzisira zvagadzira SiC ceramics ine density yakakura, yakachena. Nekuda kwehunhu hwekudzvanya kwakananga, maitiro aya anowanzo kukonzera anisotropy yezviyo, zvichikanganisa maitiro emakanika uye ekupfeka.
Zvigadziko zveSiC zvakachena zvakaoma kuomesa pasina zvinowedzerwa, zvichida sintering yakanyanya kusimba. Nadeau nevamwe vake vakabudirira kugadzira SiC yakazara yakakora isina zvinowedzerwa pa2500°C uye 5000 MPa; Sun nevamwe vake vakawana zvinhu zveβ-SiC zvakawanda zvine kuomarara kweVickers kusvika ku41.5 GPa pa25 GPa uye 1400°C. Vachishandisa 4 GPa pressure, zvigadziko zveSiC zvine huremu hweinenge 98% ne99%, kuomarara kwe35 GPa, uye elastic modulus ye450 GPa zvakagadzirwa pa1500°C ne1900°C, zvichiteerana. SiC powder yeSintering micron-sized pa5 GPa ne1500°C yakaburitsa zvigadziko zvine kuomarara kwe31.3 GPa uye huremu hwe98.4%.
Kunyangwe izvi zvichiratidza kuti kumanikidzwa kwakanyanya kunogona kuita kuti pave nekuwanda kwezvinowedzera, kuomarara uye kudhura kwakanyanya kwemidziyo inodiwa zvinoderedza kushandiswa kwemaindasitiri. Saka, mukugadzirira, zvinyamupinyi zvishoma kana kuti granulation yeupfu zvinowanzo shandiswa kuwedzera simba rekufambisa rinopisa.
Nekuwedzera 4 wt.% phenolic resin sechinhu chinowedzerwa uye chinopiswa pa2350°C uye 50 MPa, SiC ceramics ine densification rate ye92% uye kuchena kwe99.998% yakawanikwa. Kushandisa huwandu hwakaderera hwekuwedzera (boric acid neD-fructose) uye kupiswa pa2050°C uye 40 MPa, SiC ine kuchena kwakanyanya ine relative density >99.5% uye residual B content ye556 ppm chete yakagadzirwa. Mifananidzo yeSEM yakaratidza kuti, zvichienzaniswa nemasampuli asina kumanikidzwa, masampuli anopisa aive netsanga diki, mapores mashoma, uye density yakakwira. Simba reflexural raive 453.7 ± 44.9 MPa, uye elastic modulus yakasvika 444.3 ± 1.1 GPa.
Nekuwedzera nguva yekubata pa1900°C, saizi yetsanga yakawedzera kubva pa1.5 μm kusvika pa1.8 μm, uye kufambiswa kwemhepo kwakawedzera kubva pa155 kusvika pa167 W·m⁻¹·K⁻¹, ukuwo zvichiwedzerawo kuramba ngura muplasma.
Mumamiriro ezvinhu e1850°C uye 30 MPa, kudzvanya nekupisa nekukurumidza kweupfu hweSiC hwakakora uye hwakanyoroveswa zvakaburitsa β-SiC ceramics dzakakora dzisina zvimwe zvinowedzera, dzine density ye3.2 g/cm³ uye tembiricha yekupisa yakaderera 150–200°C pane maitiro echinyakare. Zvigadzirwa zveceramics zvakaratidza kuomarara kwe2729 GPa, kuomarara kwe5.25–5.30 MPa·m^1/2, uye kuramba kutsvedza kwakanaka (kutsvedza kwe9.9 × 10⁻¹⁰ s⁻¹ uye 3.8 × 10⁻⁹ s⁻¹ pa1400°C/1450°C uye 100 MPa).
(A) Mufananidzo weSEM wepamusoro wakakweshwa; (B) Mufananidzo weSEM wepamusoro pakatyoka; (C, D) Mufananidzo weBSD wepamusoro wakakweshwa
Mukutsvaga kwe3D printing ye piezoelectric ceramics, ceramic slurry, sechinhu chikuru chinokanganisa kuumbwa uye mashandiro, yave chinhu chikuru chinotariswa munyika nepasi rese. Zvidzidzo zvemazuva ano zvinowanzoratidza kuti parameters dzakadai sehukuru hwehupfu, slurry viscosity, uye solid content zvinokanganisa zvikuru kunaka kwekugadzirwa uye hunhu hwe piezoelectric hwechigadzirwa chekupedzisira.
Tsvagiridzo yakawana kuti ceramic slurry dzakagadzirwa dzichishandisa micron-, submicron-, uye nano-size barium titanate powders dzinoratidza musiyano mukuru mu stereolithography (semuenzaniso, LCD-SLA). Sezvo saizi yezvikamu ichidzikira, slurry viscosity inowedzera zvakanyanya, nepo nano-size powders dzichigadzira slurry dzine viscosity dzinosvika mabhiriyoni e mPa·s. Slurry dzine micron-size powders dzinowanzo patsanurwa uye kutsemuka panguva yekudhinda, nepo submicron ne nano-size powders dzichiratidza maitiro ekuumba akasimba. Mushure mekupiswa nekupisa kwakanyanya, sampuro dzeceramic dzakabuda dzakawana density ye5.44 g/cm³, piezoelectric coefficient (d₃₃) yeinenge 200 pC/N, uye zvinhu zvishoma zvekurasikirwa, zvichiratidza hunhu hwakanaka hwe electromechanical response.
Pamusoro pezvo, mukuita kwe micro-sterolithography, kugadzirisa huwandu hwakasimba hwePZT-type slurries (semuenzaniso, 75 wt.%) kwakaburitsa miviri yakacheneswa ine density ye7.35 g/cm³, zvichiita kuti piezoelectric constant isvike 600 pC/N pasi peminda yemagetsi inoporerwa. Tsvagiridzo pamusoro pe micro-scale deformation compensation yakavandudza zvakanyanya kurongeka kwekugadzira, ichivandudza geometric precision kusvika 80%.
Imwe ongororo yakaitwa paPMN-PT piezoelectric ceramics yakaratidza kuti zvinhu zvakasimba zvinokanganisa zvikuru chimiro checeramic uye hunhu hwemagetsi. Pa 80 wt.% yezvinhu zvakasimba, zvinhu zvishoma nezvishoma zvakaonekwa zviri nyore mu ceramics; sezvo zvinhu zvakasimba zvakawedzera kusvika 82 wt.% zvichikwira, zvigadzirwa zvishoma nezvishoma zvakanyangarika, uye chimiro checeramic chakava chakachena, nekushanda kwakawedzera zvakanyanya. Pa 82 wt.%, ceramics dzakaratidza hunhu hwakanaka hwemagetsi: piezoelectric constant ye730 pC/N, relative permittivity ye7226, uye dielectric loss ye0.07 chete.
Muchidimbu, saizi yezvidimbu, huwandu hwakasimba, uye hunhu hwe rheological hwe ceramic slurry hazvingokanganisi kugadzikana uye kururama kwemaitiro ekudhinda chete asiwo zvinosarudza zvakananga huwandu uye mhinduro ye piezoelectric yemiviri yakacheneswa, zvichiita kuti zvive zvakakosha pakuwana 3D-printed piezoelectric ceramics inoshanda zvakanyanya.
Maitiro makuru ekudhinda sampuli dzeBT/UV muLCD-SLA 3D
Hunhu hwe PMN-PT ceramics dzine zvakasiyana-siyana zvakasimba zvirimo
IV. Kupisa kwePlasma neSpark
Kupisa kweSpark plasma (SPS) tekinoroji yepamusoro inoshandisa pulsed current uye mechanical pressure panguva imwe chete inoshandiswa paupfu kuti iwedzere kusimba. Mukuita uku, magetsi anopisa zvakananga mold neupfu, zvichigadzira Joule heat neplasma, zvichiita kuti sintering ishande zvakanaka munguva pfupi (kazhinji mukati memaminitsi gumi). Kupisa nekukurumidza kunokurudzira kupararira kwepamusoro, nepo spark discharge ichibatsira kubvisa magasi akabatwa uye oxide layers kubva pamusoro peupfu, zvichivandudza mashandiro e sintering. Electromigration effect inokonzerwa neminda ye electromagnetic inowedzerawo kupararira kweatomu.
Zvichienzaniswa nekudzvanya kwetsika kwekupisa, SPS inoshandisa kupisa zvakananga, zvichiita kuti zvidimbu zviwedzere patembiricha yakaderera ukuwo ichidzivirira kukura kwezviyo kuti zvive nemaumbirwo akanaka uye akafanana. Semuenzaniso:
- Pasina kuwedzerwa, kushandisa upfu hweSiC hwakakuyiwa sezvinhu zvisina kugadzirwa, kusvina pa2100°C uye 70 MPa kwemaminitsi makumi matatu kwakaburitsa sampuli dzine huwandu hwe98%.
- Kupisa pa1700°C uye 40 MPa kwemaminitsi gumi kwakagadzira cubic SiC ine 98% density uye saizi dzezviyo dze30–50 nm chete.
- Kushandisa 80 µm granular SiC powder uye sintering pa1860°C uye 50 MPa kwemaminitsi mashanu kwakaita kuti SiC ceramics ishande zvakanaka ine 98.5% relative density, Vickers microhardness ye28.5 GPa, flexural strength ye395 MPa, uye fracture strong ye4.5 MPa·m^1/2.
Ongororo yezvikamu zvidiki yakaratidza kuti sezvo tembiricha yekupisa yakawedzera kubva pa1600°C kusvika 1860°C, kudonha kwezvinhu kwakaderera zvakanyanya, zvichisvika pakuzara kwehuwandu pakupisa kwakanyanya.
Maumbirwo eSiC ceramics akapiswa nemhepo patembiricha dzakasiyana: (A) 1600°C, (B) 1700°C, (C) 1790°C uye (D) 1860°C
V. Kugadzira Zvimwe Zvinowedzera
Kugadzira zvinhu zvinowedzera (AM) munguva pfupi yapfuura kwakaratidza kugona kukuru mukugadzira zvinhu zvakaoma zveceramic nekuda kwemaitiro ayo ekuvaka layer-by-layer. Kune SiC ceramics, matekinoroji akawanda eAM akagadzirwa, anosanganisira binder jetting (BJ), 3DP, selective laser sintering (SLS), direct ink writing (DIW), uye stereolithography (SL, DLP). Zvisinei, 3DP neDIW hazvina kunyatsojeka, nepo SLS inowanzo kukonzera kupisa uye kutsemuka. Kusiyana neizvi, BJ neSL zvinopa mabhenefiti makuru mukugadzira high-purified, high-precision complex ceramics.
- Kubata Binder (BJ)
Tekinoroji yeBJ inosanganisira kupfapfaidza binder ku bond powder layer-by-layer, zvichiteverwa nekubviswa kwebinding uye sintering kuti pave ne ceramic product yekupedzisira. Kusanganisa BJ ne chemical vapor infiltration (CVI), high-purity, fully crystalline SiC ceramics dzakagadzirwa zvinobudirira. Maitiro acho anosanganisira:
① Kugadzira miviri yegirini yeSiC ceramic uchishandisa BJ.
② Kuomesa neCVI pa1000°C uye 200 Torr.
③ SiC ceramic yekupedzisira yaive nehuremu hwe2.95 g/cm³, thermal conductivity ye37 W/m·K, uye flexural strength ye297 MPa.
Dhiyagiramu yedhizaini yejeti rinonamira (BJ). (A) Dhizaini inobatsirwa nekombiyuta (CAD) modhi, (B) dhiyagiramu yedhizaini yenheyo yeBJ, (C) kudhindwa kweSiC neBJ, (D) kusimba kweSiC nekupinda kwemhepo inoputika nemakemikari (CVI)
- Stereolithography (SL)
SL inyanzvi yekugadzira ceramic yakavakirwa paUV ine kugona kwakanyatsogadzirwa uye kwakaoma kugadzira magadzirirwo. Nzira iyi inoshandisa slurry dzeceramic dzinonzwa chiedza dzine huwandu hwakasimba uye husina kunaka kuti dzigadzire 3D ceramic green bodies kuburikidza ne photopolymerization, zvichiteverwa ne debinding uye high-temperature sintering kuti iwane chigadzirwa chekupedzisira.
Kushandisa 35 vol.% SiC slurry, 3D green bodies yepamusoro yakagadzirwa pasi pe405 nm UV irradiation uye yakawedzerwa density kuburikidza ne polymer burnout pa800°C uye PIP treatment. Zvakawanikwa zvakaratidza kuti sampuro dzakagadzirwa ne35 vol.% slurry dzakawana huwandu hwe84.8%, dzichipfuura 30% ne40% control groups.
Nekuisa lipophilic SiO₂ uye phenolic epoxy resin (PEA) kuti igadzirise slurry, mashandiro e photopolymerization akavandudzwa zvinobudirira. Mushure mekupiswa pa1600°C kwemaawa mana, kushandurwa kweSiC kwakasvika pedyo nekukwana, ne oxygen content yekupedzisira ye0.12% chete, zvichiita kuti pave nekugadzirwa kweSiC ceramics dzakachena zvakanyanya, dzakagadzirwa zvakaoma pasina matanho ekutanga kana ekupinda mukati.
Mufananidzo wechimiro chekudhinda uye maitiro ayo ekusvina. Chitarisiko chemuenzaniso mushure mekuomeswa pa (A) 25°C, pyrolysis pa (B) 1000°C, uye sintering pa (C) 1600°C.
Nekugadzira slurries dzeSi₃N₄ dzeceramic dzinonzwa nechiedza (photosensitive Si₃N₄ ceramic slurries) dzekudhinda kwe3D stereolithography uye kushandisa nzira dzekubvisa-kusunga uye dzekupisa zvakanyanya, Si₃N₄ dzeceramics dzine 93.3% theoretical density, simba rekudhonza re279.8 MPa, uye simba reflexural re308.5–333.2 MPa zvakagadzirwa. Zvidzidzo zvakawana kuti pasi pemamiriro ezvinhu e45 vol.% solid content uye nguva yekubuda kwemasekondi gumi, miviri yegirini ine layer imwe chete ine IT77-level curating precision yaigona kuwanikwa. Maitiro ekubvisa-tembiricha yakaderera ane mwero wekupisa we0.1 °C/min akabatsira kugadzira miviri yegirini isina kutsemuka.
Kugadzira sintering idanho guru rinokanganisa mashandiro ekupedzisira mu stereolithography. Tsvagiridzo inoratidza kuti kuwedzera zvinhu zvinobatsira pakugadzira sintering kunogona kuvandudza density yeceramic uye hunhu hwemakanika. Uchishandisa CeO₂ semubatsiri wekugadzira sintering uye tekinoroji yemagetsi inobatsirwa nemagetsi kugadzira high-density Si₃N₄ ceramics, CeO₂ yakawanikwa ichiparadzanisa pamiganhu yezviyo, zvichikurudzira kutsvedza kwemiganhu yezviyo uye densification. Zviyo zvakabuda zvakaratidza kuomarara kweVickers kweHV10/10 (1347.9 ± 2.4) uye kuomarara kwe (6.57 ± 0.07) MPa·m¹/². NeMgO–Y₂O₃ sekuwedzera, ceramic microstructure homogeneity yakagadziriswa, zvichiwedzera mashandiro. Padanho rekushandisa doping re8 wt.%, simba reflexural uye thermal conductivity zvakasvika 915.54 MPa uye 59.58 W·m⁻¹·K⁻¹, zvichiteerana.
VI. Mhedziso
Muchidimbu, zvigadziko zvesilicon carbide (SiC) zvine hutsanana hwakanyanya, sezvinhu zvekugadzira zvemainjiniya, zvakaratidza mikana yakawanda yekushandiswa muzvigadziko zvemasemiconductor, zvemuchadenga, uye zvemumamiriro ezvinhu akaipisisa. Pepa iri rakaongorora zvakarongeka nzira shanu dzekugadzirira zvigadziko zveSiC zvine hutsanana hwakanyanya—kudzokorodza kusvina, kusvina pasina kumanikidzwa, kudzvanya kupisa, kusvina plasma, uye kugadzira zvimwe zvinhu—nehurukuro dzakadzama pamusoro penzira dzadzo dzekuwedzera, kugadzirisa ma parameter akakosha, mashandiro ezvinhu, uye zvakanakira nemiganhu.
Zviri pachena kuti maitiro akasiyana ane hunhu hwakasiyana maererano nekuwana kuchena kwakanyanya, kuwanda kwakanyanya, zvivakwa zvakaoma, uye kugona kweindasitiri. Tekinoroji yekugadzira zvinowedzera, kunyanya, yakaratidza kugona kwakasimba mukugadzira zvinhu zvakaumbwa zvakaoma uye zvakagadzirwa, nekubudirira munzvimbo diki senge stereolithography uye binder jetting, zvichiita kuti ive nzira yakakosha yekuvandudza kugadzirira kweSiC ceramic kwakachena zvakanyanya.
Tsvagiridzo yeramangwana pamusoro pekugadzirira SiC ceramic kwakachena kwazvo inofanira kuongorora zvakadzama, ichikurudzira shanduko kubva pakushandiswa kwemainjiniya akawanda kuenda kune makuru, akavimbika zvikuru, nokudaro ichipa rutsigiro rwakakosha rwezvinhu zvekugadzira michina yepamusoro uye matekinoroji eruzivo echizvarwa chinotevera.
XKH ikambani yepamusoro-soro inonyanya kutsvagisa nekugadzira zvinhu zveceramic zvinoshanda zvakanyanya. Yakatsaurirwa kupa mhinduro dzakagadzirirwa vatengi muchimiro che silicon carbide (SiC) ceramics dzakachena kwazvo. Kambani iyi ine matekinoroji ekugadzira zvinhu zvepamusoro-soro uye kugona kwayo kugadzirisa zvinhu nemazvo. Bhizinesi rayo rinosanganisira kutsvagisa, kugadzira, kugadzirisa nemazvo, uye kugadzirisa pamusoro pezvinhu zveSiC ceramics zvine hutsanana hwakanyanya, zvichizadzisa zvinodiwa zve semiconductor, simba idzva, aerospace nedzimwe nzvimbo dzezvinhu zveceramic zvinoshanda nemazvo. Tichishandisa maitiro ekugadzira zvinhu zvine hunyanzi uye matekinoroji ekuwedzera, tinogona kupa vatengi sevhisi imwe chete kubva pakugadzirisa formula yezvinhu, kugadzira chimiro chakaoma kusvika pakugadzirisa nemazvo, kuve nechokwadi chekuti zvigadzirwa zvine hunhu hwakanaka hwemakanika, kugadzikana kwekupisa uye kuramba ngura.
Nguva yekutumira: Chikunguru-30-2025